Provided are patterned films comprising nanostructures and one or more UV-cured monomers. Also provide are methods of making the patterned films, and electroluminescent devices comprising the patterned films.

A multi-spray RRC process with dynamic control to improve final yield and further reduce resist cost is disclosed. In one embodiment, a method, includes: dispensing a first layer of solvent on a semiconductor substrate while spinning at a first speed for a first time period; dispensing the solvent on the semiconductor substrate while spinning at a second speed for a second time period so as to transform the first layer to a second layer of the solvent; dispensing the solvent on the semiconductor substrate While spinning at a third speed for a third time period so as to transform the second layer to a third layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a fourth speed for a fourth time period so as to transform the third layer to a fourth layer of the solvent; and dispensing a first layer of photoresist on the fourth layer of the solvent while spinning at a fifth speed for a fifth period of time.

A resist composition comprising a polymer is provided, the polymer comprising repeat units derived from a sulfonium or iodonium salt having a nitro-substituted benzene ring in a linker between a polymerizable unsaturated bond and a fluorosulfonic acid site. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

A method for forming a semiconductor device is provided. The method includes applying a photoresist composition over a substrate, thereby forming a photoresist layer over the substrate; performing a first baking process to the photoresist layer; exposing the photoresist layer to an extreme ultraviolet (EUV) radiation, thereby forming a pattern therein; performing a second baking process to the photoresist layer; and developing the photoresist layer having the pattern therein using a developer, thereby forming a patterned photoresist layer. The first baking process and the second baking process are conducted under an ambient atmosphere having a humidity level ranging from 55% to 100%.

Provided are a photosensitive composition including a coloring material, a resin, a polymerizable compound, a photopolymerization initiator, and a solvent A, in which the solvent A includes a solvent A1 in which a surface tension at 25° C. is 28.0 mN/m or more, a viscosity at 25° C. is 5.0 mP.Math.s or less, and a boiling point is 160° C. or higher, and a content of the solvent A1 in a total amount of the solvent A is 15% by mass or more; a method for forming a pixel formed of the photosensitive composition; a method for manufacturing an optical filter; a method for manufacturing a solid-state imaging element; and a method for manufacturing an image display device.

A multi-spray RRC process with dynamic control to improve final yield and further reduce resist cost is disclosed. In one embodiment, a method, includes: dispensing a first layer of solvent on a semiconductor substrate while spinning at a first speed for a first time period; dispensing the solvent on the semiconductor substrate while spinning at a second speed for a second time period so as to transform the first layer to a second layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a third speed for a third time period so as to transform the second layer to a third layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a fourth speed for a fourth time period so as to transform the third layer to a fourth layer of the solvent; and dispensing a first layer of photoresist on the fourth layer of the solvent while spinning at a fifth speed for a fifth period of time.

Novel photoresist developing compositions including a deprotonation agent, such as a nitrogen containing organic base capable of deprotonating a surface of portions of a photoresist layer exposed to radiation.

The present application relates to a binder resin including a compound represented by Formula 1-1 and a compound represented by the following Formula 1-2, a negative-type photosensitive resin composition, and a display device including a black bank formed by using the same.

The present invention relates to a chemically-amplified-type negative photoresist composition, and more particularly to a chemically-amplified-type negative photoresist composition suitable for use in a semiconductor process, which includes a specific organic acid additive, thereby improving a processing margin in a short-wavelength exposure light source compared to conventional negative photoresists.

A method for manufacturing a semiconductor device includes forming a resist layer including a resist composition over a substrate. The resist composition includes: a metal, a ligand, and a solvent. The solvent is mixture of a first solvent having a vapor pressure of at least 0.75 kPa, wherein the first solvent is one or more of an ether, an ester, an alkane, an aldehyde, or a ketone, and a second solvent different from the first solvent. Alternatively, the solvent is a third solvent, wherein the third solvent is a C4-C14 tertiary alcohol. The resist layer is patterned.