To provide a resist material that can form a film with high smoothness and uniformity and has high patterning performance, such as resolution, a resist material is provided that contains a calixarene compound (A) with a molecular structure represented by the following structural formula (1) and a resin component (B); ##STR00001##
wherein R.sup.1 denotes a perfluoroalkyl group or a structural moiety with a perfluoroalkyl group; R.sup.2 denotes a hydrogen atom, a polar group, a polymerizable group, or a structural moiety with a polar group or a polymerizable group; R.sup.3 denotes a hydrogen atom, an aliphatic hydrocarbon group that optionally has a substituent, or an aryl group that optionally has a substituent; n denotes an integer in the range of 2 to 10; and * denotes a bonding point with an aromatic ring.

A photosensitive resin composition comprising: (a) an epoxy resin, (b) a cationic polymerization initiator, (c) an anthracene derivative, and (d) an organic solvent having a carbonyl group, wherein the anthracene derivative (c) comprises at least one selected from the group consisting of compounds represented by a following formula (1) (In the formula (1), R.sup.1 and R.sup.2 each independently represents an alkyl group having 4 or more carbon atoms or an aryl group having 6 to 10 carbon atoms, R.sup.3 and R.sup.4 each independently represents an alkyl group, an alkoxy group having 4 or more carbon atoms, an amino group, an alkylamino group, an alkylsulfonyl group, or a halogen atom, and m and n each independently represents an integer of 0 to 4).

##STR00001##

A radiation-sensitive resin composition includes: a resin including a structural unit (A) represented by formula (1) and a structural unit (B) having an acid-dissociable group; a radiation-sensitive acid generator; and a solvent. R.sup.1 is a halogen atom-substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; X is —O— or —S—; L.sup.a1 is a halogen atom-substituted or unsubstituted divalent hydrocarbon group having 1 to 10 carbon atoms, and R.sup.P is a monovalent organic group having at least one structure selected from the group consisting of a lactone structure, a cyclic carbonate structure, and a sultone structure.

##STR00001##

The present invention provides a method for forming a patterned polyimide layer with the use of a positive photoresist composition. The composition comprises a cresol-type novolac resin, a diazonaphthoquinone-based sensitizer and an organic solvent; based on the cresol-type novolac resin with a total amount of 100 parts by weight, the amount of the diazonaphthoquinone-based sensitizer ranges from 40 parts to 60 parts by weight, the amount of the free cresol in the cresol-type novolac resin is lower than 2 parts by weight, and the alkaline dissolution rate (ADR) of the cresol-type novolac resin in an aqueous solution of 3.5 wt % to 7 wt % tetramethylammonium hydroxide is lower than 285 Å/s. The positive photoresist composition has excellent chemical resistance to the polyimide stripper, and can specifically improve the protective ability of the photoresist layer to the low-dielectric polyimide layer, thereby optimizing the manufacturing process and quality of the patterned polyimide layer.

Embodiments disclosed herein include a method of patterning a metal oxo photoresist. In an embodiment, the method comprises depositing the metal oxo photoresist on a substrate, treating the metal oxo photoresist with a first treatment, exposing the metal oxo photoresist with an EUV exposure to form exposed regions and unexposed regions, treating the exposed metal oxo photoresist with a second treatment, and developing the metal oxo photoresist.

A nanoimprint composition including an unsaturated acid metal salt (R), a photopolymerizable compound (B), a photoradical polymerization initiator, and a solvent component having compatibility with the unsaturated acid metal salt (R) and the photopolymerizable compound (B), in which a content of the unsaturated acid metal salt (R) is 50 parts by mass or greater with respect to 100 parts by mass of a total content of the unsaturated acid metal salt (R) and the photopolymerizable compound (B).

The present invention provides a photosensitive composition which can suppress the generation of a development residue on the surface of an electrode and the corrosion of the electrode to form a black pixel division layer, and also can suppress the generation of off-pixel in an organic EL display device comprising the pixel division layer. Disclosed is a photosensitive composition comprising (a) a pigment, (b) a resin having two or more tertiary amino groups in the molecule, and (c) a photosensitive agent, wherein the component (b) contains a resin having a structure represented by the general formula (1).

A coloring composition includes at least one compound S selected from a compound S-1 represented by Formula (1) or a compound S-2 in which the compound S-1 is coordinated to a metal atom, a pigment, a resin P, and a solvent, in which the resin P includes at least one selected from a graft resin P-1 having a specific graft chain, a block copolymer P-2 including a specific structure, or a resin P-3 in which at least one terminal of a polymer chain including a specific structure is capped with an acid group.

##STR00001##

A resist composition comprising a base polymer and a quencher is provided. The quencher is a salt compound consisting of a cyclic ammonium cation and an anion derived from a fluorinated 1,3-diketone compound, fluorinated β-keto ester compound or fluorinated imide compound. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

A resist composition comprising a base polymer and an acid generator containing a sulfonium or iodonium salt of iodized benzamide group-containing fluorinated sulfonic acid offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.