Patent classifications
G03F7/022
POSITIVE WORKING PHOTOSENSITIVE MATERIALS
Disclosed herein is a photosensitive composition comprising a DNQ-PAC, a heterocyclic thiol compound or tautomeric form thereof, an acrylate polymer, a Novolak and a PAG and its method of use on a substrate which may include a chalcophile substrate.
POSITIVE WORKING PHOTOSENSITIVE MATERIALS
Disclosed herein is a photosensitive composition comprising a DNQ-PAC, a heterocyclic thiol compound or tautomeric form thereof, an acrylate polymer, a Novolak and a PAG and its method of use on a substrate which may include a chalcophile substrate.
PHOTOSENSITIVE COMPOUND, PHOTOSENSITIVE COMPOSITION, AND PATTERNING METHOD
A patterning method includes providing a photosensitive composition on a material layer. The photosensitive composition includes one part by weight of a photo sensitive compound, 1.5 to 8 parts by weight of a resin, and 10 to 40 parts by weight of a diluent. The photosensitive compound has a chemical structure of
##STR00001##
The patterning method further includes removing the diluent in the photosensitive composition to form a photoresist layer, exposing the photoresist layer, and removing an exposed part of the photoresist layer to expose a part of the material layer.
Photosensitive siloxane composition and cured film formed by using the same
To provide a photosensitive composition capable of easily forming a cured film having a low refractive index. The present invention provides a photosensitive siloxane composition comprising: a polysiloxane, a photosensitive agent, hollow silica particles, and a solvent. The hollow silica particles contain voids inside, and have outer surfaces subjected to hydrophobic treatment.
Photosensitive compound, photosensitive composition, and patterning method
A patterning method includes providing a photosensitive composition on a material layer. The photosensitive composition includes one part by weight of a photo sensitive compound, 1.5 to 8 parts by weight of a resin, and 10 to 40 parts by weight of a diluent. The photosensitive compound has a chemical structure of ##STR00001##
The patterning method further includes removing the diluent in the photosensitive composition to form a photoresist layer, exposing the photoresist layer, and removing an exposed part of the photoresist layer to expose a part of the material layer.
Compound containing phenolic hydroxy group, photosensitive composition, composition for resists, resist coating film, curable composition, composition for resist underlayer films, and resist underlayer film
Provided is a compound containing a phenolic hydroxy group which has excellent heat resistance, a resist composition which has excellent thermal decomposition resistance, optical sensitivity and resolution, and a composition for a resist underlayer coating which has excellent thermal decomposition resistance and dry etching resistance. The compound containing a phenolic hydroxy group has a molecular structure represented by Structural Formula (1) below: ##STR00001##
wherein R.sup.1 is a hydrogen atom, an alkyl group or an aryl group, n is an integer of 2 to 10, R.sup.2 is any one of an alkyl group, an alkoxy group, an aryl group, an aralkyl group and a halogen atom, m is an integer of 0 to 4, and when m is 2 or greater, a plurality of R.sup.2's may be the same as or different from each other and may be bonded to either one of two aromatic rings of the naphthylene skeleton.
RESIN AND PHOTOSENSITIVE RESIN COMPOSITION
Provided is a resin capable of producing a photosensitive resin composition having high sensitivity and heat resistance. Disclosed is a resin having a structure represented by general formula (1) or (2) as a main component, wherein R.sup.2 has an organic group represented by general formula (3) and an organic group represented by general formula (4).
RESIN AND PHOTOSENSITIVE RESIN COMPOSITION
Provided is a resin capable of producing a photosensitive resin composition having high sensitivity and heat resistance. Disclosed is a resin having a structure represented by general formula (1) or (2) as a main component, wherein R.sup.2 has an organic group represented by general formula (3) and an organic group represented by general formula (4).
Modified novolak phenolic resin, making method, and resist composition
A modified novolak phenolic resin is obtained by reacting a novolak phenolic resin containing at least 50 wt % of p-cresol with a crosslinker. This method increases the molecular weight of the existing novolak phenolic resin containing at least 50 wt % of p-cresol to such a level that the resulting modified novolak phenolic resin has heat resistance enough for the photoresist application.
Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method
The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent: ##STR00001## wherein R.sup.1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R.sup.2 to R.sup.5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R.sup.2 to R.sup.5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m.sup.2 and m.sup.3 are each independently an integer of 0 to 8; m.sup.4 and m.sup.5 are each independently an integer of 0 to 9, provided that m.sup.2, m.sup.3, m.sup.4, and m.sup.5 are not 0 at the same time; n is an integer of 1 to 4; and p.sup.2 to p.sup.5 are each independently an integer of 0 to 2.