Disclosed herein is a photosensitive composition comprising an epoxy resin, a photoacid generator, and an antioxidant. The disclosed composition is useful for producing relief images having reduced yellowing or other discoloration due to thermal oxidation.

Disclosed herein is a photosensitive composition comprising an epoxy resin, a photoacid generator, and an antioxidant. The disclosed composition is useful for producing relief images having reduced yellowing or other discoloration due to thermal oxidation.

Embodiments in accordance with the present invention encompass polyamic acid or polyimide polymers containing a reactive maleimide end group as well as photosensitive compositions made therefrom which are useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays. In some embodiments the compositions of this invention are shown to feature excellent hitherto unachievable mechanical properties. The negative images formed therefrom exhibit improved thermo-mechanical properties, among other property enhancements.

The present invention relates to photosensitive compositions containing polynorbornene (PNB) polymers and certain additives that are useful for forming microelectronic and/or optoelectronic devices and assemblies thereof, and more specifically to compositions encompassing PNBs and certain multifunctional crosslinking agents, and two or more phenolic compounds which are resistant to thermo-oxidative chain degradation and exhibit improved mechanical properties.

An example resin composition includes an epoxy resin matrix, a first photoacid generator, and a second photoacid generator. The first photoacid generator includes an anion having a molecular weight less than about 250 g/mol. The second photoacid generator includes an anion having a molecular weight greater than about 300 g/mol. In an example, i) a cation of the first photoacid generator has, or ii) a cation of the second photoacid generator has, or iii) the cations of the first and second photoacid generators have a mass attenuation coefficient of at least 0.1 L/(g*cm) at a wavelength of incident light to cure the resin composition.

An example resin composition includes an epoxy resin matrix, a first photoacid generator, and a second photoacid generator. The first photoacid generator includes an anion having a molecular weight less than about 250 g/mol. The second photoacid generator includes an anion having a molecular weight greater than about 300 g/mol. In an example, i) a cation of the first photoacid generator has, or ii) a cation of the second photoacid generator has, or iii) the cations of the first and second photoacid generators have a mass attenuation coefficient of at least 0.1 L/(g*cm) at a wavelength of incident light to cure the resin composition.

Provided are a resist compound, a method of forming a pattern by using the same, and a method of manufacturing a semiconductor device using the same. According to the present disclosure, the compound may be represented by Formula 1:

##STR00001##

Provided are a resist compound, a method of forming a pattern by using the same, and a method of manufacturing a semiconductor device using the same. According to the present disclosure, the compound may be represented by Formula 1:

##STR00001##

A chemically amplified resist composition contains (A) a polymer compound containing one or two or more kinds of repeating units, at least one kind of the repeating units is polymerized from a polymerizable monomer with not more than 1000 ppm of a residual oligomer in a form of dimer to hexamer. An object of the present invention is to provide: a chemically amplified resist composition capable of achieving favorable resolution, pattern profile, and line edge roughness, and simultaneously suppressing development-residue defect, which would otherwise cause mask defect; and a method for forming a resist pattern by using this composition.

A black light-shielding photosensitive resin composition, a black matrix, a black light-shielding film, a frame, and a filling material for a splicing area are provided. The black light-shielding photosensitive resin composition includes a resin (A), a pigment (B), a monomer (C), an initiator (D), and a solvent (E). The resin (A) includes an epoxy resin (A-1) and a resin (A-2) having an ethylenic unsaturated functional group. The pigment (B) includes black particles (B-1) and hollow particles (B-2).