The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition capable of obtaining a pattern having a good shape, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a salt including a cation represented by Formula (X) and a resin of which polarity increases through decomposition by the action of an acid.

##STR00001##

The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) which contains a repeating unit (a1) having a specific ring structure, a compound (B) which generates an acid by an irradiation with an actinic ray or a radiation, and a specific compound (C) which is decomposed by an irradiation with an actinic ray or a radiation so that an acid-trapping property is lowered; an actinic ray-sensitive or radiation-sensitive film formed of the actinic ray-sensitive or radiation-sensitive resin composition; a pattern forming method using the actinic ray-sensitive or radiation-sensitive resin composition; and a method for manufacturing an electronic device.

The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) which contains a repeating unit (a1) having a specific ring structure, a compound (B) which generates an acid by an irradiation with an actinic ray or a radiation, and a specific compound (C) which is decomposed by an irradiation with an actinic ray or a radiation so that an acid-trapping property is lowered; an actinic ray-sensitive or radiation-sensitive film formed of the actinic ray-sensitive or radiation-sensitive resin composition; a pattern forming method using the actinic ray-sensitive or radiation-sensitive resin composition; and a method for manufacturing an electronic device.

A method of processing a substrate includes: providing structures on a surface of a substrate; depositing a self-assembled monolayer (SAM) over the structures and the substrate, the SAM being reactive to a predetermined wavelength of radiation; determining a first pattern of radiation exposure, the first pattern of radiation exposure having a spatially variable radiation intensity across the surface of the substrate and the structures; exposing the SAM to radiation according to the first pattern of radiation exposure, the SAM being configured to react with the radiation; developing the SAM with a predetermined removal fluid to remove portions of the SAM that are not protected from the predetermined fluid; and depositing a spacer material on the substrate and the structures, the spacer material being deposited at varying thicknesses based on an amount of the SAM remaining on the surface of the substrate and the structures.

A method of processing a substrate includes: providing structures on a surface of a substrate; depositing a self-assembled monolayer (SAM) over the structures and the substrate, the SAM being reactive to a predetermined wavelength of radiation; determining a first pattern of radiation exposure, the first pattern of radiation exposure having a spatially variable radiation intensity across the surface of the substrate and the structures; exposing the SAM to radiation according to the first pattern of radiation exposure, the SAM being configured to react with the radiation; developing the SAM with a predetermined removal fluid to remove portions of the SAM that are not protected from the predetermined fluid; and depositing a spacer material on the substrate and the structures, the spacer material being deposited at varying thicknesses based on an amount of the SAM remaining on the surface of the substrate and the structures.

Method of forming pattern in photoresist layer includes forming photoresist layer over substrate, selectively exposing photoresist layer to actinic radiation forming latent pattern. Latent pattern is developed by applying developer to form pattern. Photoresist layer includes photoresist composition including polymer: ##STR00001##
A.sub.1, A.sub.2, L are direct bond, C4-C30 aromatic, C4-C30 alkyl, C4-C30 cycloalkyl, C4-C30 hydroxylalkyl, C4-C30 alkoxy, C4-C30 alkoxyl alkyl, C4-C30 acetyl, C4-C30 acetylalkyl, C4-C30 alkyl carboxyl, C4-C30 cycloalkyl carboxyl, C4-C30 hydrocarbon ring, C4-C30 heterocyclic, —COO—, A1 and A2 are not both direct bonds, and are unsubstituted or substituted with a halogen, carbonyl, or hydroxyl; A.sub.3 is C6-C14 aromatic, wherein A.sub.3 is unsubstituted or substituted with halogen, carbonyl, or hydroxyl; R.sub.1 is acid labile group; Ra, Rb are H or C1-C3 alkyl; R.sub.f is direct bond or C1-C5 fluorocarbon; PAG is photoacid generator; 0≤x/(x+y+z)≤1, 0≤y/(x+y+z)≤1, and 0≤z/(x+y+z)≤1.

A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.

An object of the present invention is to provide a photosensitive resin composition having good liquid repellency. The photosensitive resin composition of the present invention at least contains a fluororesin having a crosslinking site, a solvent, and a photopolymerization initiator, and the fluororesin contains a repeating unit derived from a hydrocarbon having a fluorine atom.

Provided is a kit including a curable composition for imprinting, and a composition for forming an underlayer film for imprinting, in which the composition for forming an underlayer film for imprinting contains a polymer having a polymerizable functional group, and a compound in which the lower one of a boiling point and a thermal decomposition temperature is 480° C. or higher and ΔHSP, which is a Hansen solubility parameter distance from a component with the highest content contained in the curable composition for imprinting, is 2.5 or less. Furthermore, the present invention relates to a composition for forming an underlayer film for imprinting, a pattern forming method, and a method for manufacturing a semiconductor device, which are related to the kit.

Provided is a kit including a curable composition for imprinting, and a composition for forming an underlayer film for imprinting, in which the composition for forming an underlayer film for imprinting contains a polymer having a polymerizable functional group, and a compound in which the lower one of a boiling point and a thermal decomposition temperature is 480° C. or higher and ΔHSP, which is a Hansen solubility parameter distance from a component with the highest content contained in the curable composition for imprinting, is 2.5 or less. Furthermore, the present invention relates to a composition for forming an underlayer film for imprinting, a pattern forming method, and a method for manufacturing a semiconductor device, which are related to the kit.