As described herein, photosensitive composition comprises RSnL.sub.3, where R is a hydrocarbyl ligand with 1-20 carbon atoms and one or more silicon and/or germanium heteroatoms and L is an acetylide ligand (—C≡CA, where A is a silyl group with 0 to 6 carbon atoms or an organo group with 1 to 10 carbon atoms). Methods are described wherein photosensitive compositions are synthesized by reacting RX, where X is a halide, and MSnL.sub.3, where M is an alkali metal, alkali earth metal or a pseudo-alkali earth metal, L is an acetylide or a dialkylamide. The radiation sensitive compositions are effective for radiation based patterning, such as with EUV light.

A photosensitive resin composition comprising (A) a silicone resin comprising recurring units having formula (a1) and recurring units having formula (b1), (B) a filler, and (C) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which can be processed into a fine pattern in thick film form, has improved film properties like crack resistance, and is reliable as protective film. ##STR00001##

A composition includes two or more near infrared absorbing compounds having an absorption maximum in a wavelength range of 650 to 1000 nm and having a solubility of 0.1 mass % or lower in water at 23° C., in which the two or more near infrared absorbing compounds include a first near infrared absorbing compound having an absorption maximum in a wavelength range of 650 to 1000 nm, and a second near infrared absorbing compound having an absorption maximum in a wavelength range of 650 to 1000 nm which is shorter than the absorption maximum of the first near infrared absorbing compound, and a difference between the absorption maximum of the first near infrared absorbing compound and the absorption maximum of the second near infrared absorbing compound is 1 to 150 nm.

Provided is a photosensitive resin composition which comprises (A) a polymer comprising repeating units represented by formula (A1) and at least one kind of repeating units selected from among repeating units represented by formula (A2) and repeating units represented by formula (A3), (B) an epoxy compound containing four or more epoxy groups on average in the molecule, (C) a photoacid generator, (D) a benzotriazole compound and/or an imidazole compound, and (E) an organic solvent.

##STR00001##

Some embodiments include a semiconductor construction which has one or more openings extending into a substrate. The openings are at least partially filled with dielectric material comprising silicon, oxygen and carbon. The carbon is present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent. Some embodiments include a method of providing dielectric fill across a semiconductor construction having an opening extending therein. The semiconductor construction has an upper surface proximate the opening. The method includes forming photopatternable dielectric material within the opening and across the upper surface, and exposing the photopatternable dielectric material to patterned actinic radiation. Subsequently, the photopatternable dielectric material is developed to pattern the photopatternable dielectric material into a first dielectric structure which at least partially fills the opening, and to remove the photopatternable dielectric material from over the upper surface.

A composition for forming a resist underlayer film containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane, wherein the hydrolyzable silane contains a hydrolyzable silane of Formula (1):

R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4−(a+b)   Formula (1)

wherein R.sup.1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond; R.sup.2 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, an acyloxyalkyl group, or an organic group having an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, a hydroxyl group, an alkoxy group, an ester group, a sulfonyl group, or a cyano group, or any combination of these groups, and is bonded to a silicon atom via an Si—C bond; R.sup.1 and R.sup.2 are optionally bonded together to form a ring structure; R.sup.3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3; and the hydrolysis condensate contains an organic group having a salt structure formed between a counter anion derived from a nitric acid and a counter cation derived from a primary ammonium group, a secondary ammonium group, or a tertiary ammonium group.

An adhesion promoter as shown in Formula (I) and a photosensitive resin composition containing the adhesion promoter are disclosed:

##STR00001## where R.sub.1, R.sub.2 and R.sub.3 each refer to a hydrogen atom, an optionally substituted C.sub.1-C.sub.20 alkyl, an optionally substituted C.sub.2-C.sub.20 alkenyl, an optionally substituted C.sub.2-C.sub.20 alkynyl, an optionally substituted phenyl, or other optionally substituted carbon atom; A refers to an optionally substituted C.sub.1-C.sub.20 alkyl, an optionally substituted C.sub.2-C.sub.20 alkenyl, an optionally substituted C.sub.2-C.sub.20 alkynyl, an optionally substituted phenyl, or other an optionally substituted carbon atom substituents; and the carbon in the alkyl, the alkenyl, the alkynyl, the phenyl, or the carbon atom substituents is optionally substituted with one or more of N, O and S; and X refers to an optionally substituted aromatic heterocyclic group. The adhesion promoter and the photosensitive resin composition can be used for manufacturing a semiconductor integrated circuit (IC), a LED and a flat-panel display.

A pattern forming method including pressing a mold having an uneven pattern against a curable film formed of a nanoimprint composition to transfer the uneven pattern to the curable film, curing the curable film to which the uneven pattern has been transferred while pressing the mold against the curable film to form a cured film, peeling the mold off from the cured film, and heating the cured film, from which the mold has been peeled off at 160° C. or higher to form a post-baked cured film.

The present disclosure relates to a UV- and heat-curable ladder-like polysilsesquioxane copolymer and a method for preparing the same. Since a controlled functionality can be provided only on a desired region via a thiol-ene click reaction without an additional additive, an insulating layer having a low dielectric constant and a microcircuit pattern can be formed without an additional etching process.

[Object] To provide a negative type photosensitive composition developable with a low concentration alkali developer and capable of forming a cured film excellent in transparency, in chemical resistance and in environmental durability; and further to provide a pattern-formation method employing the composition. [Means] The present invention provides a negative type photosensitive composition comprising: (I) an alkali-soluble resin, namely, a polymer comprising a carboxyl-containing polymerization unit and an alkoxysilyl-containing polymerization unit, (II) a polysiloxane, (III) a compound having two or more (meth)acryloyloxy groups, (IV) (i) a silicone derivative having a particular structure and/or (ii) a compound having two or more epoxy groups, (V) a polymerization initiator, and (VI) a solvent.