Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.

A photosensitive composition capable of forming a cured product with high transparency, a cured product of the photosensitive composition, and a method for producing the cured product using the photosensitive composition. In a photosensitive composition including a base component having photopolymerizability and a photopolymerization initiator, a silicone resin is used as the base component, and a phosphine oxide compound and an oxime ester compound as a photopolymerization initiator are used in combination at a specific ratio.

The present invention is a material for forming an adhesive film formed between a silicon-containing middle layer film and a resist upper layer film, the material for forming an adhesive film containing: (A) a resin having a structural unit shown by the following general formula (1); (B) a crosslinking agent containing one or more compounds shown by the following general formula (2); (C) a photo-acid generator; and (D) an organic solvent. This provides: a material for forming an adhesive film in a fine patterning process by a multilayer resist method in a semiconductor device manufacturing process, where the material gives an adhesive film that has high adhesiveness to a resist upper layer film, has an effect of suppressing fine pattern collapse, and that also makes it possible to form an excellent pattern profile; a patterning process using the material; and a method for forming the adhesive film.

##STR00001##

A method of forming a pattern, the method comprising applying a layer of a coating composition over a substrate; curing the applied coating composition to form a coated underlayer; and forming a photoresist layer over the coated underlayer, wherein the coating composition comprises a first material comprising two or more hydroxy groups; a second material comprising two or more glycidyl groups; an additive comprising a protected amino group; and a solvent.

A single layer process is utilized to reduce swing effect interference and reflection during imaging of a photoresist. An anti-reflective additive is added to a photoresist, wherein the anti-reflective additive has a dye portion and a reactive portion. Upon dispensing the reactive portion will react with underlying structures to form an anti-reflective coating between the underlying structure and a remainder of the photoresist. During imaging, the anti-reflective coating will either absorb the energy, preventing it from being reflected, or else modify the optical path of reflection, thereby helping to reduce interference caused by the reflected energy.

There are provided a curable composition for imprinting, the curable composition including a polymerizable compound having two or more radical polymerizable groups, a radical polymerization initiator, and at least one compound selected from the group consisting of an organopolysiloxane having only one radical polymerizable group and an organopolysiloxane having no or one radical polymerizable group and having a poly(oxyalkylene) group, a cured product of the curable composition for imprinting, a method for producing an imprint pattern using the curable composition for imprinting, and a method for producing a device, the method including the method for producing an imprint pattern.

A fabricating method of reducing photoresist footing includes providing a silicon nitride layer. Later, a fluorination process is performed to graft fluoride ions onto a top surface of the silicon nitride layer. After the fluorination process, a photoresist is formed to contact the top surface of the silicon nitride layer. Finally, the photoresist is patterned to remove at least part of the photoresist contacting the silicon nitride layer.

An ablation layer for a photosensitive resin for a relief printing plate, the ablation layer containing at least an acid-modified polymer and an infrared-absorbing agent and having a layer acid value as defined below of 2 mg KOH/g or more and 400 mg KOH/g or less, and a neutralized salt ratio as defined below of 0.9 or less, wherein the Layer acid value=(Acid value of the acid-modified polymer)×(Mass ratio of the acid-modified polymer to an entire ablation layer); and wherein the Neutralized salt ratio=(Number of moles of polymer wherein acid in the acid-modified polymer exists in neutralized salt state)/(Total number of moles of the acid-modified polymer).

An ablation layer for a photosensitive resin for a relief printing plate, the ablation layer containing at least an acid-modified polymer and an infrared-absorbing agent and having a layer acid value as defined below of 2 mg KOH/g or more and 400 mg KOH/g or less, and a neutralized salt ratio as defined below of 0.9 or less, wherein the Layer acid value=(Acid value of the acid-modified polymer)×(Mass ratio of the acid-modified polymer to an entire ablation layer); and wherein the Neutralized salt ratio=(Number of moles of polymer wherein acid in the acid-modified polymer exists in neutralized salt state)/(Total number of moles of the acid-modified polymer).

An adhesion promoter composition comprising at least one of the following compounds: (a) a cyclic compound having the formula: ##STR00001##
(b) a non-cyclic compound having the formula: ##STR00002##
wherein R.sub.1 and R.sub.2 each independently represents a non-photoactive phenyl, a photoactive phenyl or a C.sub.1-C.sub.4 alkyl; R.sub.3 represents a non-photoactive phenyl; R.sub.4 represents a photoactive phenyl; W represents Si or Ge; n represents an integer of value greater than 1;
m represents an integer between 0 and 1.