The present invention provides a photosensitive resin composition and a cured film prepared therefrom. The photosensitive resin composition includes a mixture of two or more siloxane polymers having different dissolution rates with respect to an aqueous solution of tetramethylammonium hydroxide. The composition keeps high transparency and high sensitivity, which are advantages of a composition containing a siloxane polymer, and has excellent chemical resistance, thereby providing a cured film having excellent stability in a post-processing.

Provided is a photosensitive resin composition that includes: a silicone resin (A) having an epoxy group and/or a phenolic hydroxyl group; an alkyl phenol novolac resin (B) indicated by formula (B); and a photoacid generator (C).

##STR00001##

(In the formula, R.sup.51 is a C1-9 saturated hydrocarbyl group. R.sup.52 is a C10-25 saturated hydrocarbyl group. n.sup.1 and n.sup.2 are numbers that fulfil 0≤n.sup.1<1, 0<n.sup.2≤1, and n.sup.1+n.sup.2=1. m.sup.1 represents an integer from 0 to 3 and m.sup.2 represents an integer from 1 to 3.)

There are provided a curable composition for imprinting, the curable composition including an organopolysiloxane having a radical polymerizable group, a radical generator, and a compound that has a monovalent hydrocarbon group having 4 to 11 carbon atoms and a poly(oxyalkylene) group, in which some or all of hydrogen atoms of the monovalent hydrocarbon group are optionally substituted with halogen atoms, a coating film of the composition, a method for producing the film, a cured product of the composition, a method for producing an imprint pattern using the composition, and a method for producing a device, the method including the method for producing an imprint pattern.

A film-forming composition for forming a resist underlayer film for a solvent development type resist that is capable of forming a good resist pattern which contains a hydrolysis-condensation product of a hydrolyzable silane compound, at least one substance that is selected from the group consisting of an aminoplast crosslinking agent and a phenoplast crosslinking agent, and a solvent, and wherein the hydrolyzable silane compound contains a hydrolyzable silane represented by formula (1).

A film-forming composition includes a solvent and hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane compound by using an acidic compound containing two or more acidic groups. The hydrolyzable silane compound contains an amino-group-containing silane with formula (1). R.sup.1 is an organic group containing an amino group. R.sup.2 is a substitutable alkyl, substitutable aryl, substitutable aralkyl, substitutable halogenated alkyl, substitutable halogenated aryl, substitutable halogenated aralkyl, substitutable alkoxyalkyl, substitutable alkoxyaryl, substitutable alkoxyaralkyl, or substitutable alkenyl group, or an organic group containing an epoxy, acryloyl, methacryloyl, mercapto, or a cyano group. R.sup.3 is an alkoxy, aralkyloxy, or acyloxy group or halogen atom. a is an integer of 1 or 2, b of 0 or 1; and a and b satisfy a relation of a+b≤2.

R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4−(a+b)  (1)

A material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains: (A) a polymer having a structural unit shown by the following general formula (1); (B) a residual-solvent removal promoter containing a compound shown by the following general formula (2); and (C) an organic solvent. A ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer (A) in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00. The residual-solvent removal promoter (B) is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer (A). The material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains no acid generator.

##STR00001##

##STR00002##

The present invention relates to a photopolymer composition for hologram formation, comprising: a polymer matrix comprising a siloxane-based polymer and a (meth)acrylate polymer containing one or more reactive functional groups in the side chains, a holographic recording method, and an optical element.

To provide a photosensitive composition capable of easily forming a cured film having a low refractive index. The present invention provides a photosensitive siloxane composition comprising: a polysiloxane, a photosensitive agent, hollow silica particles, and a solvent. The hollow silica particles contain voids inside, and have outer surfaces subjected to hydrophobic treatment.

Disclosed is a sol-gel imprinting ink composition comprising a sol and an additive for promoting gelation of the composition during imprinting at an imprinting temperature. The composition has a pH of 4-7 when mixed with an equal volume of deionized water and measured at 20° C. and 1 atm. The additive is the reversible reaction product of a protic acid and a proton-accepting base. The vapour pressure of the acid is higher than that of the base at the imprinting temperature such that the concentration of the base in the composition increases relative to the concentration of the acid in the composition during imprinting, resulting in basification of the composition. Further disclosed is a method of forming a patterned layer with such a sol-gel imprinting ink composition, and an optical element and an etch mask respectively including the patterned layer.

Provided is a negative photoresist used for a semiconductor encapsulation process, belonging to the technical field of semiconductor processing. A negative photoresist formulation includes 40-65 wt % of modified epoxy acrylate, 3-6 wt % of photosensitizer, 100-1000 ppm of leveling agent, and the remainder of solvent; the leveling agent is a solution of a 7:3 mass ratio of polydimethylsiloxane copolymer having a molecular weight of 3000-6000 and propylene glycol monomethyl ether acetate. If the negative photoresist is coated at a thickness of about 50 um, the coating uniformity can be controlled to below 5%, ensuring the quality of exposure such that the thickness of electroplated copper meets requirements.