A mask, a mask assembly including a mask, and a substrate transfer apparatus including a mask. According to an embodiment, a mask includes a frame including an opening, accommodation structure disposed on the frame and including an accommodation space shielded from an outside, and a sensor disposed in the accommodation space.

A hardmask composition, a hardmask layer manufactured from the hardmask composition, and a method of forming patterns from the hardmask composition, the composition including a solvent; and a polymer including a structural unit represented by Chemical Formula 1,

##STR00001##

A hardmask composition, a hardmask layer manufactured from the hardmask composition, and a method of forming patterns from the hardmask composition, the composition including a solvent; and a polymer including a structural unit represented by Chemical Formula 1,

##STR00001##

A resist underlayer composition and a method of forming patterns using a resist underlayer composition, the resist underlayer composition including a polymer, the polymer including a structural unit that is a reaction product of an isocyanurate compound, the isocyanurate compound having at least one thiol group thereon, and a solvent.

A lithographic printing plate precursor is disclosed which comprises a support, a photopolymerizable image recording layer and an overcoat which comprises a low-molecular radical inhibitor. After image-wise exposure, the plate is heated whereby the radical inhibitor diffuses from the overcoat to the image recording layer, resulting in an increase of the daylight stability of the exposed and heated precursor. Such plate is especially suitable for on-press processing.

A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I): ##STR00001##
wherein, EWG, Y, R, and M.sup.+ are the same as described in the specification.

A compound with enhanced etching resistance, gap-filling properties, and heat resistance includes a repeating unit represented by Formula 1.

##STR00001##

Embodiments of the present disclosure generally relate to a multilayer stack used as a mask in extreme ultraviolet (EUV) lithography and methods for forming a multilayer stack. In one embodiment, the method includes forming a carbon layer over a film stack, forming a metal rich oxide layer on the carbon layer by a physical vapor deposition (PVD) process, forming a metal oxide photoresist layer on the metal rich oxide layer, and patterning the metal oxide photoresist layer. The metal oxide photoresist layer is different from the metal rich oxide layer and is formed by a process different from the PVD process. The metal rich oxide layer formed by the PVD process improves adhesion of the metal oxide photoresist layer and increases the secondary electrons during EUV lithography, which leads to decreased EUV dose energies.

An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air, generates no by-product and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate. The present invention provides a material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A) or (1B); and (B) an organic solvent, ##STR00001##
noting that in the general formula (1A), when W.sub.1 represents any of ##STR00002##
R.sub.1 does not represent any of ##STR00003##

A method of manufacturing a semiconductor device includes forming a first resist layer over a substrate, and forming a second resist layer over the first resist layer. The second resist layer is patterned to expose a portion of the first resist layer to form a second resist layer pattern. The first resist layer is exposed to extreme ultraviolet (XUV) radiation diffracted by the second resist layer pattern. Portions of the first resist layer exposed to the XUV radiation diffracted by the second resist layer are removed.