A method includes applying a composition for forming a resist underlayer film to a substrate having a recess in a surface, and baking the composition for forming a resist underlayer film to form a resist underlayer film for filling at least the recess. The composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: ##STR00001## wherein R.sup.1 and R.sup.2 are each independently a C.sub.1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group.

An exemplary semiconductor fabrication stack includes underlying layers; an organic planarization layer atop the underlying layers; a metal oxide hardmask atop the organic planarization layer and doped with both carbon and nitrogen; and an organic photoresist directly atop the doped metal oxide hardmask. In one or more embodiments, the doped metal oxide hardmask exhibits a water contact angle of greater than 80°.

A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 mn.

Methods for making a semiconductor device using an improved BARC (bottom anti-reflective coating) are provided herein. The improved BARC comprises a polymer formed from at least a styrene monomer having at least one or two hydrophilic substituents. The monomer(s) and substituents can be varied as desired to obtain a balance between film adhesion and wet etch resistance. Also provided is a semiconductor device produced using such methods.

A lithographic method for making an out-of-plane optical coupler includes forming a photoresist layer of positive photoresist material over a substrate. The positive photoresist layer undergoes a flood exposure to light through a binary mask to pattern a latent image of a mirror blank in the photoresist layer. A laser beam is scanned over the latent image of the mirror blank to apply controlled dosages of light at specified locations to form a latent image of a planar mirror surface that is oriented at a prescribed non-zero angle to a plane in which the substrate extends. The positive photoresist material is developed so that a remaining portion of the developed positive photoresist material forms an out-of-plane optical coupler having a planar mirror surface that is oriented at the prescribed angle.

The present application provides a backplane unit, a manufacturing method thereof, and a display device. The manufacturing method includes the following steps: forming a photoresist layer on an array substrate; performing exposure on at least a portion of the photoresist layer corresponding to a light-emitting element; forming a light-shielding layer on at least a side of the photoresist layer away from the array substrate, wherein the light-shielding layer exposes at least a side portion of the light-emitting element; and laterally stripping the photoresist layer on the light-emitting element with a stripping solution to obtain the backplane unit.

The present application provides a backplane unit, a manufacturing method thereof, and a display device. The manufacturing method includes the following steps: forming a photoresist layer on an array substrate; performing exposure on at least a portion of the photoresist layer corresponding to a light-emitting element; forming a light-shielding layer on at least a side of the photoresist layer away from the array substrate, wherein the light-shielding layer exposes at least a side portion of the light-emitting element; and laterally stripping the photoresist layer on the light-emitting element with a stripping solution to obtain the backplane unit.

A method includes providing a first multilayer structure including a substrate, a thin film, and a first photoresist layer; providing a second multilayer structure including a mold having a microstructure pattern, and a second photoresist layer; combining the first multilayer structure and the second multilayer structure so that the first photoresist layer is in contact with the second photoresist layer; and applying pressure and temperature. An article including a microstructure pattern is also disclosed.

Provided is a film for application to a 3D sample, the film including a photoresist layer that has alignment or direction marks thereon. After the fine pattern of the photoresist layer or coat is exposed, the photoresist layer is applied to a desired position of the 3D sample by aligning the alignment or direction marks of the film with alignment or direction marks on the 3D sample. This allows for transfer of an appropriate fine pattern. Part or all of the thickness or area of the photoresist layer is developed to form projections or depressions in the photoresist layer before the film is applied to the 3D sample.

Provided is a film for application to a 3D sample, the film including a photoresist layer that has alignment or direction marks thereon. After the fine pattern of the photoresist layer or coat is exposed, the photoresist layer is applied to a desired position of the 3D sample by aligning the alignment or direction marks of the film with alignment or direction marks on the 3D sample. This allows for transfer of an appropriate fine pattern. Part or all of the thickness or area of the photoresist layer is developed to form projections or depressions in the photoresist layer before the film is applied to the 3D sample.