A packaging semiconductor device, such as a fan-out Wafer-Level Packaging (FOWLP) device, is fabricated by providing a semiconductor device (20) having conductive patterns (22) disposed on a first surface and then forming, on the conductive patterns, photoresist islands (24) having a first predetermined shape defined by a first critical width dimension and a minimum height dimension so that a subsequently-formed dielectric polymer layer (26) surrounds but does not cover each photoresist island (24), thereby allowing each photoresist island to be selectively removed from the one or more conductive patterns to form one or more via openings (28) in the dielectric polymer layer such that each via opening has a second predetermined shape which matches at least part of the first predetermined shape of the photoresist islands.

An optical element has an area in which a transmittance varies, includes first and second antireflection layers, and an absorption layer disposed between the first and second antireflection layers, and satisfies certain conditions.

Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.

Provided are a planographic printing plate precursor including an aluminum support, and an image recording layer and a protective layer which are provided on the aluminum support in this order, in which a thickness of the protective layer is 0.2 μm or greater, and Expression (1) is satisfied in a case where a Bekk smoothness of a surface of an outermost layer on a side opposite to a side where the image recording layer is provided is denoted by b seconds; a planographic printing plate precursor laminate; a plate-making method for a planographic printing plate; and a planographic printing method.

Provided is a method for producing a multi-layered microchannel device by using a photosensitive resin laminate, which is highly-defined and excellent in dimension accuracy and enables channels to be partially hydrophilized or hydrophobilized, wherein the method comprises step (i) of sequentially carrying out (i-a) forming a first photosensitive resin layer on a substrate, (i-b) light-exposing the first photosensitive resin layer, and (i-c) developing the light-exposed photosensitive layer and forming a channel pattern layer, to form a first channel pattern layer; and step (ii) of sequentially carrying out (ii-a) laminating a second photosensitive resin laminate on the first channel pattern layer formed in the step (i), (ii-b) light-exposing a photosensitive layer of the second photosensitive resin laminate, and (ii-c) developing the light-exposed photosensitive layer and forming a channel pattern layer, to form a second channel pattern layer.

Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.

Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.

The present invention is a material for forming an adhesive film formed between a silicon-containing middle layer film and a resist upper layer film, the material for forming an adhesive film containing: (A) a resin having a structural unit shown by the following general formula (1); (B) a crosslinking agent containing one or more compounds shown by the following general formula (2); (C) a photo-acid generator; and (D) an organic solvent. This provides: a material for forming an adhesive film in a fine patterning process by a multilayer resist method in a semiconductor device manufacturing process, where the material gives an adhesive film that has high adhesiveness to a resist upper layer film, has an effect of suppressing fine pattern collapse, and that also makes it possible to form an excellent pattern profile; a patterning process using the material; and a method for forming the adhesive film.

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A method of forming a pattern, the method comprising applying a layer of a coating composition over a substrate; curing the applied coating composition to form a coated underlayer; and forming a photoresist layer over the coated underlayer, wherein the coating composition comprises a first material comprising two or more hydroxy groups; a second material comprising two or more glycidyl groups; an additive comprising a protected amino group; and a solvent.

A single layer process is utilized to reduce swing effect interference and reflection during imaging of a photoresist. An anti-reflective additive is added to a photoresist, wherein the anti-reflective additive has a dye portion and a reactive portion. Upon dispensing the reactive portion will react with underlying structures to form an anti-reflective coating between the underlying structure and a remainder of the photoresist. During imaging, the anti-reflective coating will either absorb the energy, preventing it from being reflected, or else modify the optical path of reflection, thereby helping to reduce interference caused by the reflected energy.