According to one embodiment, a pattern forming method includes forming a resist film including a first core material pattern and a second core material pattern, on a first film laminated on a substrate; forming a second film at least on sidewalls of the first and second core material patterns; removing the first core material pattern while not removing the second core material pattern and the second film; and processing the first film by using, as a mask, the second core material pattern and the second film.

A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I):

##STR00001##

wherein, EWG, Y, R, and M.sup.+ are the same as described in the specification.

A photoresist film is patterned into an array of island shapes with improved critical dimension uniformity and no phase edges by using two alternating phase shifting masks (AltPSMs) and one post expose bake (PEB). The photoresist layer is exposed with a first AltPSM having a line/space (L/S) pattern where light through alternating clear regions on each side of an opaque line is 180° phase shifted. Thereafter, there is a second exposure with a second AltPSM having a L/S pattern where opaque lines are aligned orthogonal to the lengthwise dimension of opaque lines in the first exposure, and with alternating 0° and 180° clear regions. Then, a PEB and subsequent development process are used to form an array of island shapes. The double exposure method enables smaller island shapes than conventional photolithography and uses relatively simple AltPSM designs that are easier to implement in production than other optical enhancement techniques.

A bottom antireflective coating composition and a method for forming a photoresist relief image. The coating composition comprises a resin containing a structural unit represented by the Formula (1), a structural unit represented by the Formula (2), and a structural unit represented by the Formula (3):

##STR00001##

The structural unit represented by the Formula (1), the structural unit represented by the Formula (2), and the structural unit represented by the Formula (3) is present in the resin in a molar ratio of (0.1-1000):(0.1-1000):1.

[Problem to be Solved] An object is to provide a compound with good heat resistance. And another object is to provide a coating made exhibits less film shrinkage, good gap filling property and good planarization. [Solution] The present invention provides an ethynyl derived composite and a composition comprising thereof. And the present invention provides a method for manufacturing a coating by it, and a method for manufacturing a device.

In one preferred embodiment, polymers are provided that comprise a structure of the following Formula (I): ##STR00001##
Photoresists that comprises such polymers also are provided.

The present invention provides a resist underlayer film capable of improving LWR and CDU in a fine pattern formed by a chemically-amplified resist which uses an acid as a catalyst. A composition for forming a silicon-containing resist underlayer film, including a thermosetting silicon-containing material (Sx), a curing catalyst (Xc), and a solvent, in which a distance of diffusion of the curing catalyst (Xc) from a resist underlayer film formed from the composition for forming a silicon-containing resist underlayer film to a resist upper layer film to be formed on the resist underlayer film is 5 nm or less.

A method includes forming a tri-layer. The tri-layer includes a bottom layer; a middle layer over the bottom layer; and a top layer over the middle layer. The top layer includes a photo resist. The method further includes removing the top layer; and removing the middle layer using a chemical solution. The chemical solution is free from potassium hydroxide (KOH), and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride.

A method for forming a nanopore device includes providing a sapphire substrate and forming oxide layers on the front and back sides of the sapphire substrate. The oxide layer on the back is patterned to form an etch mask. The method also includes performing a crystalline orientation dependent wet anisotropic etch on the backside of the sapphire substrate using the etch mask to form a cavity having sloped sides to expose a portion of the first oxide layer. A silicon nitride membrane layer is formed on the oxide layer on the front side of the sapphire substrate. Next, the exposed portion of the oxide layer in the cavity is removed to cause the exposed portion of the silicon nitride membrane layer to be suspended over the cavity in the sapphire substrate. Subsequently, an opening is formed in the suspended portion of the silicon nitride membrane layer to form the nanopore.

A sample support includes: a substrate having a plurality of through-holes opening on a first surface and on a second surface; a first member having a plurality of first openings and disposed on the first surface; a second member having a plurality of second openings and disposed on the second surface, and; a bonding member disposed between the first member and the second member; and a conductive layer integrally provided on a region of the second surface corresponding to each of the plurality of second openings. The plurality of through-holes include a plurality of first through-holes located between each of the plurality of first openings and each of the plurality of second openings, and a plurality of second through-holes located between the first member and the second member. Each of the plurality of second openings communicate with each of the plurality of first openings through the plurality of first through-holes.