An object of the present invention is to provide a lithographic printing plate precursor which has excellent on-press developability and is capable of suppressing generation of slip stains and from which a lithographic printing plate with satisfactory printing durability is obtained, and a method of producing a lithographic printing plate and a printing method using the lithographic printing plate precursor. The lithographic printing plate precursor of the present invention is a lithographic printing plate precursor including an aluminum support, and an image recording layer, in which the aluminum support includes an aluminum plate and an anodized aluminum film disposed on the aluminum plate, the anodized film is positioned on a side of the image recording layer with respect to the aluminum plate, the anodized film has micropores extending from a surface of the anodized film on the side of the image recording layer in a depth direction, the micropores have an opening ratio of 20% to 70%, a steepness a45 on the surface of the anodized film on the side of the image recording layer is in a range of 3% to 25%, and an arithmetic average roughness Ra on the surface of the anodized film on the side of the image recording layer is in a range of 0.25 to 0.60 μm.

A method of manufacturing a semiconductor device includes forming a first layer including an organic material over a substrate. A second layer including a reaction product of a silicon-containing material and a photoacid generator is formed over the first layer. A photosensitive layer is formed over the second layer, and the second layer is patterned.

A planographic printing plate precursor containing in the following order: an aluminum support; an image recording layer; and a protective layer, in which a thickness of the protective layer is 0.2 μm or greater, and in a case where a Bekk smoothness of a surface of an outermost layer at a side where the image recording layer is provided is 1000 seconds or less.

A composition comprising (A) a polymer comprising recurring units (a1) having a carboxyl group protected with an acid labile group and recurring units (a2) having a cyclic ester, cyclic carbonate or cyclic sulfonate structure, (B) a thermal acid generator, and (C) an organic solvent is suited to form a protective film between a substrate and a resist film. Even when a metal-containing resist film is used, the protective film is effective for preventing the substrate from metal contamination.

A method for forming a device structure is disclosed. The method of forming a device structure includes forming a variable-depth structure in a device material layer using a laser ablation. A plurality of device structures is formed in the variable-depth structure to define slanted device structures therein. The variable-depth structure and the slanted device structures are formed using an etch process.

Provided is a novel composition for forming a resist underlayer film. This composition for forming a resist underlayer film includes a polymer (X) and a solvent, the polymer (X) containing: a plurality of structural units which are the same as or different from each other and have a methoxymethyl group and a ROCH2- group (R is a monovalent organic group, a hydrogen atom, or a mixture thereof) other than the methoxymethyl group; and a linking group that links the more than one structural unit.

An organic film forming composition, containing: a material shown by formula (I) and/or (II); and an organic solvent, where R.sub.1 and R.sub.4 each represent a hydrogen atom, an allyl or propargyl group, R.sub.2 and R.sub.5 each represent a substituent, R.sub.3 and R.sub.6 represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkynyl group having 2 to 4 carbon atoms, or an alkenyl group having 2 to 4 carbon atoms. “m” and “i” represent 0 or 1, “k” and “q” represent an integer of 0 to 2, “n” represent 1 or 2, “h”, and “j” represent an integer of 0 to 2 and satisfy the relationship 1≤h+j≤4, and “1” and “r” represent 0 or 1. W represents a single bond or divalent group shown by formulae (3). Each V independently represents a hydrogen atom or linking moiety.

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A method of manufacturing a semiconductor device includes forming a first tone resist layer over an underlayer. The first tone resist layer is pattern to form a first pattern exposing a portion of the underlayer. The first pattern is extended into the underlayer, and the first tone resist layer is removed. A second tone resist layer is formed over the underlayer, wherein the second tone is opposite the first tone. The second tone resist layer is patterned to form a second pattern exposing another portion of the underlayer. The second pattern is extended into underlayer, and the second tone resist layer is removed.

Embodiments of the present disclosure generally relate to a multilayer stack used as a mask in extreme ultraviolet (EUV) lithography and methods for forming a multilayer stack. In one embodiment, the method includes forming a carbon layer over a film stack, forming a metal rich oxide layer on the carbon layer by a physical vapor deposition (PVD) process, forming a metal oxide photoresist layer on the metal rich oxide layer, and patterning the metal oxide photoresist layer. The metal oxide photoresist layer is different from the metal rich oxide layer and is formed by a process different from the PVD process. The metal rich oxide layer formed by the PVD process improves adhesion of the metal oxide photoresist layer and increases the secondary electrons during EUV lithography, which leads to decreased EUV dose energies.

To address the needs in the art, a method of fabricating a meta-surface antireflective coating that includes forming on a substrate or in a film on the substrate, using a patterning method, a pattern of nanostructures, where the nanostructures include a pattern of nanowires or a pattern of nanoparticles, or the pattern nanowires and the pattern of nanoparticles, where the nanostructures are arranged to form a metasurface AR coating, where the metasurface AR coating reflects incident light in a double-dip reflectance according to a doubly-resonant arrangement of the metasurface AR coating, where the metasurface AR coating comprises a structure for a direct light pathway and a resonant light pathway.