A compound comprising an aromatic group or a heteroaromatic group, wherein the aromatic group or the heteroaromatic group comprises a first substituent group comprising an ethylenically unsaturated double bond, a second substituent group that is an iodine atom, and a third substituent group comprising an acid-labile group, wherein the first substituent group, the second substituent group, and the third substituent group are each bonded to a different carbon atom of the aromatic group or the heteroaromatic group.

The present invention is a positive photosensitive resin composition including: (A) an alkali-soluble resin containing at least one structure selected from a polyimide structure, a polyamide structure, a polybenzoxazole structure, a polyamide-imide structure, and a precursor structure thereof; (B) a polymer compound having a structural unit formed by cyclopolymerization; and (C) a compound having a quinonediazide structure for serving as a photosensitizer to generate an acid by light and increase a dissolution speed to an alkaline aqueous solution. An object of the present invention is to provide a positive photosensitive resin composition and a positive photosensitive dry film that are soluble in an alkaline aqueous solution, that can achieve high resolution without damaging excellent features such as the mechanical characteristics of a protective film, adhesiveness, etc., and that have excellent mechanical characteristics and adhesiveness to a substrate even when cured at low temperatures.

A resist composition which generates an acid upon exposure and whose solubility in a developing solution is changed due to an action of the acid, the resist composition including a base material component whose solubility in a developing solution is changed due to the action of an acid, an acid generator component which generates an acid upon exposure, and an organic acid which contains at least one carboxy group, in which the acid generator component contains a compound represented by formula (b1) in which R.sup.2011 to R.sup.2031 represent an aryl group, an alkyl group, or an alkenyl group. R.sup.2011 to R.sup.2031 have a total of four or more substituents containing fluorine atoms, X.sup.n− represent an n-valent anion, and n represents an integer of 1 or greater. ##STR00001##

A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation acquiring unit configured to acquire information upon a variation amount of a deformation of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation amount of the deformation of the peripheral portion acquired by the variation acquiring unit.

A hard mask-forming composition which forms a hard mask used in lithography, including: a resin containing an aromatic ring and a polar group; and a compound containing at least one of an oxazine ring fused to an aromatic ring, and a fluorene ring.

A lithography method includes forming a bottom anti-reflective coating (BARC) layer on a substrate, wherein the BARC layer includes an organic polymer and a reactive chemical group having at least one of chelating ligands and capping monomers, wherein the reactive chemical group is bonded to the organic polymer; coating a metal-containing photoresist (MePR) layer on the BARC layer, wherein the MePR being sensitive to an extreme ultraviolet (EUV) radiation; performing a first baking process to the MePR layer and the BARC layer, thereby reacting a metal chemical structure of the MePR layer and the reactive chemical structure of the BARC layer and forming an interface layer between the MePR layer and the BARC layer; performing an exposure process using the EUV radiation to the MePR layer; and developing the MePR layer to form a patterned photoresist layer.

A method for depositing nanostructures on a substrate comprises: forming a patterned alignment layer on a surface of the substrate, wherein the patterned alignment layer has one or more cavities each having a main region for accommodating at least one template nanostructure therein and a plurality of extension regions extending from the main region and in fluid communication with the main region, and wherein the plurality of extension regions are sized and shaped to not accommodate the at least one template nanostructure; and diffusing template nanostructures into the one or more cavities of the patterned alignment layer.

A method of processing a substrate that includes forming over the substrate an extreme ultraviolet (EUV)-active photoresist film including a network of metal oxide terminated with alkoxy groups and patterning the EUV-active photoresist film with EUV lithography.

An apparatus for treating a substrate includes a processing container having an inner space; a support unit having a support plate configured to support and rotate the substrate in the inner space; a liquid supply unit configured to supply treating liquid to the substrate supported by the support unit; and an exhaust unit configured to exhaust an air flow in the inner space, wherein the exhaust unit includes an air flow guide duct guiding a flow direction of an air flow flowing on the substrate to an outer side of the substrate due to a rotation of the substrate supported by the support unit, and the air flow guide duct having an inlet into which an air flow is introduced, the inlet provided at a substantially same level with the substrate supported by the support unit.

Provided is a polymer that when used as a main chain scission-type positive resist, can sufficiently inhibit resist pattern collapse, can favorably form a clear resist pattern, and can also improve sensitivity. The polymer includes a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below. [In formula (I), R.sup.1 is an organic group including not fewer than 5 and not more than 7 fluorine atoms. In formula (II), R.sup.2 is a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R.sup.3 is a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of not less than 0 and not more than 5, and p+q=5.] ##STR00001##