There is provided a copper foil provided with a carrier providing excellent chemical resistance against the copper flash etching solution during the formation of the wiring layer on the surface of the coreless support and excellent visibility of the wiring layer due to high contrast to the antireflective layer in image inspection after copper flash etching. The copper foil provided with a carrier comprises a carrier; a release layer provided on the carrier; an antireflective layer provided on the release layer and composed of at least one metal selected from the group consisting of Cr, W, Ta, Ti, Ni and Mo; and an extremely-thin copper layer provided on the antireflective layer; wherein at least the surface adjacent to the extremely-thin copper layer of the antireflective layer comprises an aggregate of metal particles.

Provided is a black-film-forming mixed powder containing: (A) a zirconium nitride powder that does not contain zirconium dioxide, a low-order oxide of zirconium, or a low-order oxynitride of zirconium; and (B) a titanium nitride powder or a titanium oxynitride powder, wherein the content ratio of (A) the zirconium nitride powder and (B) the titanium nitride powder or the titanium oxynitride powder is within the range of 90:10 to 25:75 in terms of mass ratio (A:B). When the light transmittance at a wavelength of 400 nm is X, the light transmittance at a wavelength of 550 nm is Y, and the light transmittance at a wavelength of 1,000 nm is Z in a spectrum of a dispersion in which the mixed powder is dispersed in a concentration of 50 ppm, X>10%, Y<10%, Z<16%, X/Y is 1.25 or more, and Z/Y is 2.0 or less.

Disclosed is a thin film circuit substrate and a manufacturing method thereof, which are capable of forming a pattern having a feature size of less than 10 m by forming a seed layer and a plating layer on a base substrate and then forming, through electrospinning, a photoresist layer having a thickness in a set range. The disclosed thin film circuit substrate comprises: a base substrate; a thin film seed layer formed on the top surface of the base substrate; a metal layer formed on the top surface of the thin film seed layer; and a photoresist layer formed on the top surface of the metal layer, wherein the thickness of the photoresist layer is in a range of 1 m to 5 m.

A substrate is provided with a patterned layer, for example, a photo resist layer, which may exhibit line roughness. In one exemplary embodiment, the patterned layer may be an extreme ultraviolet (EUV) photo resist layer. In one method, selective deposition of additional material is provided on the EUV photo resist layer after patterning to provide improved roughness and lithographic structure height to allow for more process margin when transferring the pattern to a layer underlying the photo resist. The additional material is deposited selectively thicker in areas above the photo resist than in areas where the photo resist is not present, such as exposed areas between the photo resist pattern. Pattern transfer to a layer underlying the photo resist may then occur (for example via an etch) while the patterned photo resist and additional material above the photo resist may collectively operate as an etch mask.

Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.

A photoresist and a method of manufacturing photoresist patterns are disclosed. The photoresist includes a plurality of photosensitive units, and each photosensitive unit has magnetism.

Embodiments of the present disclosure describe a chemical replacement system and a method to automatically replace PR bottles. The chemical replacement system includes a computer system and a transfer module. The computer system can receive a request signal to replace one or more chemical containers and transmit a command to the transfer module. The transfer module, being controlled by the computer system, can include a holder configured to hold the one or more chemical containers (e.g., PR bottles); a door unit configured to open in response to the command; and a transfer unit configured to eject the holder in response to the command for replacement. The chemical replacement system can further include an automated vehicle configured to replace the one or more chemical containers in the ejected holder.

Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.

Arrangements of the present disclosure provide a mask and a control method thereof. The mask includes a first substrate and a second substrate disposed opposite to each other, and a functional layer between the first substrate and the second substrate. The functional layer is mainly formed of uniformly arranged functional particles. The functional particles are gathered and arranged under a vertical electric field. The functional particles are opaque. The mask further includes a first electrode disposed on the first substrate, and a second electrode disposed on the second substrate. The first electrode and the second electrode form a plurality of evenly distributed vertical voltage generation units.

The invention relates to polysulfonamide compositions for use as redistribution layers as used in the manufacture of semiconductors and semiconductor packages. More specifically it relates to photoimageable polysulfonamide composition for redistribution applications. The invention also relates to the use of the compositions in semiconductor manufacture.