A method of manufacturing a printed circuit board a includes preparing an insulating substrate on which a first metal layer is formed, stacking a resist laminate having a plurality of layers on the first metal layer, forming an opening exposing a portion of the first metal layer by patterning the stacked resist laminate having the plurality of layers, forming a second metal layer on the exposed portion of the first metal layer, removing the patterned resist laminate having the plurality of layers, and etching at least another portion of the first metal layer.

Provided is a black-film-forming mixed powder containing: (A) a zirconium nitride powder that does not contain zirconium dioxide, a low-order oxide of zirconium, or a low-order oxynitride of zirconium; and (B) a titanium nitride powder or a titanium oxynitride powder, wherein the content ratio of (A) the zirconium nitride powder and (B) the titanium nitride powder or the titanium oxynitride powder is within the range of 90:10 to 25:75 in terms of mass ratio (A:B). When the light transmittance at a wavelength of 400 nm is X, the light transmittance at a wavelength of 550 nm is Y, and the light transmittance at a wavelength of 1,000 nm is Z in a spectrum of a dispersion in which the mixed powder is dispersed in a concentration of 50 ppm, X>10%, Y<10%, Z<16%, X/Y is 1.25 or more, and Z/Y is 2.0 or less.

This disclosure provides systems and methods for fabricating a transparent display device. The display device can include a light guide having a first surface for illumination and a second surface, positioned opposite the first surface. The second surface can be a non-illuminated surface. The display device can include a plurality of one-way light emitting pixels positioned on the second surface of the light guide and configured to frustrate total internal reflection of light within the light guide. The plurality of pixels can each include a light-diffusive layer and light-reflective layer. The display device can include a light source configured to introduce light into an edge of the light guide to cause the plurality of pixels to emit at least a portion of the light through the first surface of the light guide.

A semiconductor manufacturing device has an outer cup and inner cup with a wafer suction mount disposed within the outer cup. A photoresist material is applied to a first surface of a semiconductor wafer disposed on the wafer suction mount while rotating at a first speed. A gas port is disposed on the inner cup for dispensing a gas oriented toward a bottom side of the semiconductor wafer. The gas port purges a second surface of the semiconductor wafer with a gas to remove contamination. The second surface of the semiconductor wafer is rinsed while purging with the gas. The gas can be a stable or inert gas, such as nitrogen. The contamination is removed from the second surface of the semiconductor wafer through an outlet between the inner cup and outer cup. The semiconductor wafer rotates at a second greater speed after discontinuing purge with the gas.

An EUV photoresist composition includes paramagnetic particles that are adapted to block EUV radiation. The magnetic manipulation of the paramagnetic particles within a deposited layer of EUV photoresist can beneficially impact focus control and the achievable line width roughness during subsequent photolithographic processing. A spin-coating apparatus for dispensing the EUV photoresist composition onto a substrate includes a plurality of concentric electromagnets located beneath the substrate that influence the distribution of the paramagnetic particles in the photoresist layer.

The present invention is a conductive polymer composition including: (A) a polyaniline-based conductive polymer having two or more kinds of repeating units shown by the following general formula (1); and (B) a dopant polymer which contains a repeating unit shown by the following general formula (2) and has a weight-average molecular weight in a range of 1,000 to 500,000.

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This provides a conductive polymer composition having good filterability and film-formability of a flat film onto an electron beam resist, and being suitably usable for a antistatic film for electron beam resist drawing having lower surface resistivity (/) to show excellent antistatic performance in an electron beam drawing process, and excellent peelability with H.sub.2O or an alkaline developer after drawing.

A method for manufacturing metal horological components, includes the steps of forming a multilevel mould made of a photosensitive resin, with a UV-LIGA method, and galvanically depositing a layer of at least one metal starting from a conductive layer in order to form a block that substantially reaches the upper surface of the photosensitive resin.

An apparatus for fabricating an electrode structure includes a high voltage unit, a plating material part facing the high voltage unit, and a transfer roll to which a negative voltage is applied. The high voltage unit includes a high voltage roll, and an insulating sheath configured to cover a surface of the high voltage roll. The high voltage roll is applied with a voltage of about 1 kV to about 100 kV, the plating material part is applied with a positive voltage, and the high voltage unit and the transfer roll rotate.

There is provided a copper foil provided with a carrier providing excellent chemical resistance against the copper flash etching solution during the formation of the wiring layer on the surface of the coreless support and excellent visibility of the wiring layer due to high contrast to the antireflective layer in image inspection after copper flash etching. The copper foil provided with a carrier comprises a carrier; a release layer provided on the carrier; an antireflective layer provided on the release layer and composed of at least one metal selected from the group consisting of Cr, W, Ta, Ti, Ni and Mo; and an extremely-thin copper layer provided on the antireflective layer; wherein at least the surface adjacent to the extremely-thin copper layer of the antireflective layer comprises an aggregate of metal particles.

The present disclosure provides a method of manufacturing a nanowire grid polarizer, including the steps as follows: S1, providing a nanoimprint mold and filling the nanoimprint mold by using a photoresist material to obtain a nanoimprint component; S2, pairing the nanoimprint component and a conductive substrate to cure the photoresist material on a surface of the conductive substrate, removing the nanoimprint mold and forming a nano photoresist array on the surface of the conductive substrate; wherein the nano photoresist array has a first void array therebetween; and S3, depositing a metal in the first void array by using an electrodeposition method and removing the nano photoresist array, and forming a nanowire grid on the surface of the conductive substrate to obtain the nanowire grid polarizer. According to the manufacturing method of the present disclosure, an etching process is avoided, and metals of different materials and different sizes may be deposited according to the needs, moreover, a growth speed of the metal may be controlled by adjusting the electrodeposition parameters, and it is easy to obtain the nanowire grid with a short cycle and a high depth-to-width ratio, thereby obtaining a better polarizing effect in application.