A semiconductor manufacturing device has an outer cup and inner cup with a wafer suction mount disposed within the outer cup. A photoresist material is applied to a first surface of a semiconductor wafer disposed on the wafer suction mount while rotating at a first speed. A gas port is disposed on the inner cup for dispensing a gas oriented toward a bottom side of the semiconductor wafer. The gas port purges a second surface of the semiconductor wafer with a gas to remove contamination. The second surface of the semiconductor wafer is rinsed while purging with the gas. The gas can be a stable or inert gas, such as nitrogen. The contamination is removed from the second surface of the semiconductor wafer through an outlet between the inner cup and outer cup. The semiconductor wafer rotates at a second greater speed after discontinuing purge with the gas.

An object of the present invention is to provide a droplet sensor and a condensation detection device having stable detection properties and a method for manufacturing the same. Even when the droplet sensor and the condensation detection device are mass-produced, the present invention enables reduction of manufacturing variation between the elements and enables high detection accuracy and high electrical output of the elements. A droplet sensor of the present invention includes: an insulating substrate; a first electrode having a first thin wire and a first current collector; and a second electrode having a second thin wire and a second current collector. The first electrode and the second electrode are disposed on the insulating substrate. The first thin wire and the second thin wire are alternately disposed in juxtaposition with each other on the insulating substrate. The droplet sensor senses a galvanic current flowing between the first thin wire and the second thin wire through a conductive droplet. The first thin wire is formed of a first metal-containing material layer having a lower electrical resistivity than platinum. The second thin wire is a composite film of the first metal-containing material layer and a platinum-containing material composed of platinum or a platinum alloy. The platinum-containing material layer has at least a part of a surface exposed to the outside.

A bearing table and a fabrication method thereof as well as a processing device and an operation method thereof. The bearing table includes a bearing substrate; an electrically conductive layer disposed on the bearing substrate; and an insulation layer covering the electrically conductive layer disposed on the bearing substrate. The electrically conductive layer is configured to provide electrostatic adsorption. conductive layer

Nanoparticle(NP)-decorated carbon nanotube (CNT) ropes used as sensing elements for hydrogen gas (H.sub.2) chemiresistors are described herein. The NP-decorated CNT rope sensors were prepared by dielectrophoretic deposition of a single semiconducting CNT rope followed by the electrodeposition of metal nanoparticles to highly disperse said nanoparticles on the CNT surfaces. The rope sensors produced a relative resistance change 20-30 times larger than what was observed at single, pure Pd nanowires. Thus, the rope sensors improved upon all H.sub.2 sensing metrics (speed, dynamic range, and limit-of-detection) relative to single Pd nanowires.

Provided are a coloring composition having excellent heat resistance and solvent resistance, a cured film, a color filter, a method for manufacturing a color filter, a solid-state imaging device, an image display device, and a polymer.

The coloring composition includes a polymer TP consisting only of a repeating unit A having a triarylmethane structure and a repeating unit B having an acid group, and a polymerizable compound, in which the polymer TP contain the repeating unit B in the amount of 12% to 60% by mass with respect to all the repeating units of the polymer TP.

A method of forming a photoresist layer includes: forming alignment electrodes on a base; mixing color QRs and photoresist to form a mixed material; coating the mixed material on the base; applying the base coated with the mixed material with positive and negative voltages so that the long axes of the color QRs align horizontally under the effect of the horizontal electric fields generated by the alignment electrodes; vacuum-drying the base coated with the mixed material to enhance the viscosity of the photoresist; interrupting electricity at a designated point to form a photoresist layer, wherein the long axes of QRs remain aligned horizontally; the color film substrate includes color resist films; when a backlight source emits blue light to the color film substrate, a color filter is disposed on top of the red color film to filtrate the blue light.

A dispensing system includes a dispense material supply that contains a dispense material and a dispensing pump connected downstream from the dispense material supply. The dispensing pump includes a body made of a first electrically conductive material, one or more first electrical contacts that are disposed on the body of the dispensing pump, and one or more first connection wires that are coupled between each one of the one or more first electrical contacts and ground. The dispensing system also includes a dispensing nozzle connected downstream from the dispensing pump and includes a tube made of a second electrically conductive material, one or more second electrical contacts that are disposed on an outer surface of the tube, and one or more second connection wires that are coupled between each one of the one or more second electrical contacts and the ground.

A method for photoresist-free photolithography to pattern a surface of conductor or semiconductor substrate and deposit a material includes surface cleaning and irradiating a surface through a mask with VUV photons from a lamp. Photons are generated with a VUV lamp having a wavelength of 160 nm-200 nm and with an intensity sufficient to alter the surface. The photons are directed through a mask pattern to alter the surface chemistry or structure in those areas of the substrate defined by the mask. Material is selectively deposited onto the surface, in those portions of the surface that are exposed to the VUV photons, or unexposed to the VUV photons, depending on the substrate surface. A method uses a seed film and then electroplates metal onto the seed film in the mask pattern. A method provides for electroless deposition of metal and another for altering surface chemistry in the mask pattern.

Provided is a resist film forming device which uses an electrostatic spray device which is capable of forming a thin film with a uniform thickness on a workpiece. A resist film forming device (100), which forms a resist film (108) on a substrate by electrostatic spraying, comprises: a nozzle (102) which, upon application of a prescribed voltage, sprays liquid particles which form the raw material for a resist film (108) toward a substrate (105) having stepped portions (105a); a driving means (111) for causing relative movement of the substrate (105) or the nozzle (102); and a control means (110) for controlling such that the resist film (108) is formed on the substrate (105) having the stepped portions (105a) by the liquid particles.

A method of manufacturing a deposition mask is disclosed. In one aspect, the method includes depositing a first photoresist layer on a substrate, aligning a first photomask over the first photoresist layer and developing the first photoresist layer to form a plurality of first photoresist patterns having sides that gradually narrow toward the substrate. The method also includes forming a metal layer over the first photoresist patterns and a portion of the substrate exposed by the first photoresist patterns, depositing a second photoresist layer over the metal layer and aligning a second photomask over the second photoresist layer and developing the second photoresist layer to form a plurality of second photoresist patterns between the first photoresist patterns. The method further includes etching the metal layer to form a pattern hole, removing the first and second photoresist patterns and separating the substrate so as to form a deposition mask.