A method for exposing a photopolymerization layer comprising photopolymers includes: providing a printed circuit board, with a photopolymerization layer disposed on the top side of the printed circuit board; performing first-instance exposure on the photopolymerization layer, using a UV source and a digital micro-lens device, wherein the UV source is of a power less than 0.2 kW; stopping the first-instance exposure; covering the photopolymerization layer with a mask, with the mask having a bottom side in contact with the photopolymerization layer; and performing second-instance exposure on the photopolymerization layer, using a mercury lamp and the mask, wherein the mercury lamp is of a power greater than 5 kW.

A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1) as a repeating unit, and an organic solvent. Each of AR1 and AR2 represents a benzene ring or naphthalene ring which optionally have a substituent; W.sub.1 represents a particular partial structure having a triple bond, and the polymer optionally contains two or more kinds of W.sub.1; and W.sub.2 represents a divalent organic group having 6 to 80 carbon atoms and at least one aromatic ring. This invention provides: a polymer curable even under film formation conditions in an inert gas and capable of forming an organic film which has not only excellent heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also favorable film formability onto a substrate with less sublimation product; and a composition for forming an organic film, containing the polymer. ##STR00001##

A method of manufacturing a semiconductor device includes forming a first tone resist layer over an underlayer. The first tone resist layer is pattern to form a first pattern exposing a portion of the underlayer. The first pattern is extended into the underlayer, and the first tone resist layer is removed. A second tone resist layer is formed over the underlayer, wherein the second tone is opposite the first tone. The second tone resist layer is patterned to form a second pattern exposing another portion of the underlayer. The second pattern is extended into underlayer, and the second tone resist layer is removed.

A method includes the following steps. A photoresist is exposed to a first light-exposure through a first mask, wherein the first mask includes a first stitching region, and a portion of the photoresist corresponding to a portion of the first stitching region is unexposed during the first light-exposure. The photoresist is exposed to a second light-exposure through a second mask, wherein the second mask includes a second stitching region and a functional feature in the second stitching region, and the portion of the photoresist is exposed by the functional feature during the second light-exposure.

The present application provides an alignment method for backside photolithography process of the wafer, the alignment method includes: cutting the wafer, and using at least two edges formed by cutting as the first alignment mark; bonding the front side of the wafer to the wafer pad to form a composite wafer; aligning the first alignment mark with the corresponding second alignment mark on the photomask for backside photolithography. This method is not limited by wafer thickness and material, and reduces the secondary input of the photolithography equipment; meanwhile, the probability of fragments of thin wafers in the photolithography process can be reduced, and the yield of the product is effectively improved.

A manufacturing method for a structure includes preparing a dry film supported on one surface of a support; bonding the dry film to a substrate so that the dry film and the substrate are in contact with each other; performing first exposure of the dry film bonded to the substrate via the support; removing the support after the first exposure; performing second exposure of the dry film after the support is removed via a photomask; and developing the dry film after the first exposure and the second exposure.

An object of the present invention is to provide a transfer film with which a cured film having low moisture permeability and excellent bending resistance can be formed. In addition, an object of the present invention is to provide a method for producing a laminate using the transfer film. The transfer film of the present invention includes a temporary support and a photosensitive composition layer disposed on the temporary support, in which the photosensitive composition layer includes an alkali-soluble resin, a polymerizable compound, and a polymerization initiator represented by Formula I or Formula II, and a content of the polymerization initiator is 0.1% to 3.0% by mass with respect to a total mass of the photosensitive composition layer. X.sup.1 is a group represented by —S—R.sup.11 or a group represented by —R.sup.12, R.sup.11 and R.sup.12 are each independently a monovalent organic group having 2 or more carbon atoms, X.sup.2 is an n-valent linking group, Y.sup.1, Y.sup.2, Z.sup.1, and Z.sup.2 are alkyl groups or aryl groups, which may have a substituent, X.sup.3 is a monovalent substituent, m is an integer of 0 to 3, and n is 2 or 3.

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Provided are a method for inspecting a photosensitive composition, the method being able to more accurately evaluate photosensitive compositions produced at different times and including the same materials, and a method for producing a photosensitive composition.

The method for inspecting a photosensitive composition includes a first step of performing exposure treatment, heat treatment, and development treatment in this order on a dummy substrate including a first photosensitive composition layer formed using a first photosensitive composition; a second step of performing exposure treatment, heat treatment, and development treatment under the same conditions as in the first step on a first evaluation substrate including the first photosensitive composition layer to form a pattern; a third step of performing exposure treatment, heat treatment, and development treatment under the same conditions as in the first step on a second evaluation substrate including a second photosensitive composition layer formed using a second photosensitive composition to form a pattern; and a fourth step of determining whether a difference between a dimension of the pattern obtained in the second step and a dimension of the pattern obtained in the third step is within an acceptable range. The first photosensitive composition and the second photosensitive composition are compositions including the same materials and produced in different lots.

A wafer edge exposure method includes: providing a wafer, the edge of the wafer having multiple regions to be exposed and non-exposed regions adjacent to the plurality of regions to be exposed; and providing a wafer edge exposure device, aligning in sequence the wafer edge exposure device with each of the regions to be exposed while isolating from the non-exposed regions, and exposing each of the regions to be exposed. The wafer edge exposure method, the wafer edge exposure device, and the mask can reduce the damage to effective wafers during the exposure process while ensuring the exposure effect of the wafers.

A grating coupler may be fabricated by exposing a photopolymer layer to grating forming light for forming periodic refractive index variations in the photopolymer layer. The photopolymer layer may be exposed to apodization light for reducing an amplitude of the periodic refractive index variations in a spatially-selective manner. The apodization may also be achieved or facilitated by subjecting outer surface(s) of the photopolymer layer to a chemically reactive agent that causes the refractive index contrast to be reduced near the surface(s) of application. The apodized refractive index profile of the gratings facilitates the reduction of optical crosstalk between different gratings of the grating coupler.