Methods and systems for PS-CAR photoresist simulation are described. In an embodiment, a method includes calibrating initial conditions for a simulation of at least one process parameter of a lithography process using a radiation-sensitive material. In such an embodiment, the radiation-sensitive material includes a first light wavelength activation threshold that controls the generation of acid to a first acid concentration in the radiation-sensitive material and controls generation of photosensitizer molecules in the radiation-sensitive material, and a second light wavelength activation threshold that can excite the photosensitizer molecules in the radiation-sensitive material that results in the acid comprising a second acid concentration that is greater than the first acid concentration, the second light wavelength being different from the first light wavelength. Further, the method may include performing a lithography process using the previously-determined at least one process parameter.

Methods and systems for PS-CAR photoresist simulation are described. In an embodiment, a method includes determining by simulation at least one process parameter of a lithography process using a radiation-sensitive material. In such an embodiment, the radiation-sensitive material includes: a first light wavelength activation threshold that controls the generation of acid to a first acid concentration in the radiation-sensitive material and controls generation of photosensitizer molecules in the radiation-sensitive material, and a second light wavelength activation threshold that can excite the photosensitizer molecules in the radiation-sensitive material that results in the acid comprising a second acid concentration that is greater than the first acid concentration, the second light wavelength being different from the first light wavelength. In such an embodiment, the method also includes performing a lithography process using the previously-determined at least one process parameter.

A method includes: providing a first layout of a first layer over a substrate, the first layer having at least one metal pattern, and generating a second layout by placing a cut mask at a first position relative to the substrate to remove material from a first region of the at least one metal pattern to provide a first metal pattern and placing the cut mask at a second position relative to the first layer over the substrate to remove material from a second region of the at least one metal pattern to provide a second metal pattern.

An extreme ultraviolet lithography (EUVL) method includes providing at least two phase-shifting mask areas having a same pattern. A resist layer is formed over a substrate. An optimum exposure dose of the resist layer is determined, and a latent image is formed on a same area of the resist layer by a multiple exposure process. The multiple exposure process includes a plurality of exposure processes and each of the plurality of exposure processes uses a different phase-shifting mask area from the at least two phase-shifting mask areas having a same pattern.

An apparatus comprises a low EUV reflectivity (LEUVR) mask. The LEUVR mask includes a low thermal expansion material (LTEM) layer; a reflective multilayer (ML) over the LTEM layer; and a patterned absorption layer over the reflective ML. The reflective ML has less than 2% EUV reflectivity.

A wafer edge exposure apparatus includes a wafer carrying module, a reticle, a reticle driving module, an alignment module, an exposure module, and a control module; the wafer carrying module is configured to carry the wafer and drive the wafer to rotate; the wafer includes a valid region and an edge region surrounding the valid region; the reticle driving module is configured to drive the reticle to rotate; the alignment unit is configured to detect the alignment state of the reticle with the wafer; and the control module is configured to control the movement state of the wafer carrying module and the reticle driving module and configured to control the exposure module to perform wafer edge exposure on the wafer.

Systems and methods for shaping a film. Formable material in an imprint field on the substrate may be contacted with a shaping surface of a template. Outer boundaries of the imprint field correspond to outer boundaries of the shaping surface. Shaping the film includes forming a cured layer within the imprint field while the shaping surface is in contact with the formable material. Shaping the film may include separating the shaping surface from the cured layer. Shaping the film may include moving the template away from the imprint field to a first offset location wherein the outer boundaries of the shaping surface are offset relative to the outer boundaries of the imprint field. Shaping the film may include curing a second portion of the formable material while the template is at the first offset location so as to form the shaped film.

Embodiments of this disclosure provide a photoresist structure, a patterned deposition layer, a semiconductor chip and a manufacturing method thereof According to the method for manufacturing a photoresist structure, a single photoresist is used, a second photoresist layer having an undercut can be obtained by only one development process using a single developing solution, and the size of the undercut can be controlled by the development time, thereby solving the problems such as difficulty in lift-off caused by adhesion of the deposited material to the sidewall of the photoresist structure in traditional lift-off processes.

In accordance with a method of forming a waveguide in a polymer film disposed on a substrate, a plurality of regions on a polymer film are selectively exposed to a first dosage of radiation. The polymer film is formed from a material having a refractive index that decreases by exposure to the radiation and subsequent heating. At least one region of the polymer film that was not previously exposed to the radiation is selectively exposing to a second dosage of radiation. The second dosage of radiation is less than the first dosage of radiation. The polymer film is heated to complete curing of the polymer film.

The metal plate includes a plurality of pits located on the surface of the metal plate. The manufacturing method for a metal plate for use in manufacturing of a deposition mask includes an inspection step of determining a quality of the metal plate based on a sum of volumes of a plurality of pits located at a portion of the surface of the metal plate.