Patent classifications
G03F7/34
PHOTOSENSITIVE PASTE, METHOD FOR FORMING WIRING PATTERN, METHOD FOR PRODUCING ELECTRONIC COMPONENT, AND ELECTRONIC COMPONENT
A photosensitive paste contains a photoinitiator, a photopolymerizable monomer, an alkali-soluble polymer, an inorganic powder, and a radical scavenger. A method for forming a wiring pattern includes a step of forming a photosensitive paste film by applying the photosensitive paste that has electrical conductivity to an insulating sheet; a step of irradiating a portion of the photosensitive paste film with an active energy ray; and a step of forming a wiring pattern by removing an uncured portion of the photosensitive paste film.
PHOTOSENSITIVE PASTE, METHOD FOR FORMING WIRING PATTERN, METHOD FOR PRODUCING ELECTRONIC COMPONENT, AND ELECTRONIC COMPONENT
A photosensitive paste contains a photoinitiator, a photopolymerizable monomer, an alkali-soluble polymer, an inorganic powder, and a radical scavenger. A method for forming a wiring pattern includes a step of forming a photosensitive paste film by applying the photosensitive paste that has electrical conductivity to an insulating sheet; a step of irradiating a portion of the photosensitive paste film with an active energy ray; and a step of forming a wiring pattern by removing an uncured portion of the photosensitive paste film.
Photosensitive polyimide compositions
This disclosure relates to a dry film structure that includes a carrier substrate, and a polymeric layer supported by the carrier substrate. The polymeric layer includes at least one fully imidized polyimide polymer.
EUV-INDUCED CONDENSATION OF POLYSILOXANE SOL-GEL THIN FILM
Methods for direct patterning of a silicon hardmask with extreme ultraviolet (EUV) radiation are provided. The method involves forming a polysiloxane and/or oligosiloxane composition into a silicon hardmask layer followed by solvent removal. Without using a photoresist and/or other layer silicon hardmask layer, condensation of the siloxane sol-gel polymers and/or oligomers is induced by EUV radiation, rendering the exposed portions insoluble in typical lithography solvents or developers. The exposed portions of the silicon hardmask layer are removed, leaving a pattern in the silicon hardmask layer that can be transferred to any layers below the silicon hardmask layer, and ultimately to the substrate.
Separating device for bonded cine film and method therefor
A separating device and method for a bonded cine film, belonging to the field of image file protection and repair technologies. The separating device comprises a pressurizing device, a separating device and a liquid nitrogen storage device. The pressurizing device is connected to the liquid nitrogen storage device; the liquid nitrogen storage device is connected to the separating device for providing liquid nitrogen thereto; the separating device comprises a film receiving chamber for accommodating a film to be separated; the pressurizing device pressurizes the liquid nitrogen storage device allowing liquid nitrogen to enter the film receiving chamber. Due to a difference between expansion coefficients of a base layer and emulsion layer of the film under low temperature, micro-pores and gaps may be generated in the base layer and the emulsion layer of a bonded film roll; the liquid nitrogen penetrates into the micro-pores and gaps of the bonded film.
Flexographic printing elements that can be dried rapidly
Photopolymerizable, preferably digitally imageable photopolymerizable, flexographic printing elements having a PET support sheet of low thermal shrinkage, methods of preparing such flexographic printing elements and their use for making flexographic printing plates by imagewise exposure to light, washing out with organic solvents and drying, wherein said drying is carried out at temperatures of more than 60 C.
Flexographic printing elements that can be dried rapidly
Photopolymerizable, preferably digitally imageable photopolymerizable, flexographic printing elements having a PET support sheet of low thermal shrinkage, methods of preparing such flexographic printing elements and their use for making flexographic printing plates by imagewise exposure to light, washing out with organic solvents and drying, wherein said drying is carried out at temperatures of more than 60 C.
ADHESION LAYER-FORMING COMPOSITION AND METHOD FOR PRODUCING ARTICLE
An adhesion layer-forming composition to allow a substrate to adhere to a photocurable composition at least contains a curable base material (A) containing at least one functional group that binds to a base and at least one radically polymerizable functional group, a polymerization inhibitor (B), and an organic solvent (C), the adhesion layer-forming composition having a polymerization inhibitor (B) content of 0.1 parts by weight or more and 20 parts by weight or less based on 100 parts by weight of the curable base material (A).
ADHESION LAYER-FORMING COMPOSITION AND METHOD FOR PRODUCING ARTICLE
An adhesion layer-forming composition to allow a substrate to adhere to a photocurable composition at least contains a curable base material (A) containing at least one functional group that binds to a base and at least one radically polymerizable functional group, a polymerization inhibitor (B), and an organic solvent (C), the adhesion layer-forming composition having a polymerization inhibitor (B) content of 0.1 parts by weight or more and 20 parts by weight or less based on 100 parts by weight of the curable base material (A).
RESIN MEMBRANE FILTER AND MANUFACTURING METHOD OF RESIN MEMBRANE FILTER
An object of the present invention is to provide a resin membrane filter having excellent separation accuracy, toughness, and filtration speed, and a manufacturing method of the resin membrane filter.
The resin membrane filter of the present invention includes a first main surface, a second main surface, and a plurality of through-holes, in which the resin membrane filter is a single membrane, in the through-hole, in a case where an average area of an opening portion at a position A which is located at a distance of 10% of a thickness of the resin membrane filter from the first main surface is denoted as Sva and an average area of an opening portion at a position B which is located at a distance of 90% of the thickness of the resin membrane filter from the first main surface is denoted as Svb, Sva/Svb<0.80, and a number ratio Ra of through-holes in which an area of the opening portion at the position A is more than 1.2 times Sva is 3.0% or less.