A method of graphene-enabled block copolymer lithography transfer to an arbitrary substrate comprising the steps of applying graphene on a surface, adding block copolymers to the graphene on the surface, phase-separating the block copolymers, forming nanopatterned phase separated block copolymers, delaminating the graphene, and transferring the graphene and nanopatterned phase separated block copolymers to a second surface. A layer of nanopatterned phase separated block copolymers on an arbitrary surface comprising a first arbitrary substrate absent of chemical preparation, a layer of graphene on the first arbitrary substrate, and a layer of phase-separated block copolymers on the layer of graphene, wherein the layer of phase-separated block copolymers on the layer of graphene was formed on a second substrate and delaminated via water liftoff and wherein the nanopatterned phase separated block copolymers are utilized as a shadow mask for lithography on the first arbitrary substrate.

Organic light emitting diode (OLED) devices are disclosed that include a first layer; a backfill layer having a structured first side and a second side; a planarization layer having a structured first side and a second side; and a second layer; wherein the second side of the backfill layer is coincident with and adjacent to the first layer, the second side of the planarization layer is coincident with and adjacent to the second layer, the structured first side of the backfill layer and structured first side of the planarization layer form a structured interface, the refractive index of the backfill layer is index matched to the first layer, and the refractive index of the planarization layer is index matched to the second layer.

Organic light emitting diode (OLED) devices are disclosed that include a first layer; a backfill layer having a structured first side and a second side; a planarization layer having a structured first side and a second side; and a second layer; wherein the second side of the backfill layer is coincident with and adjacent to the first layer, the second side of the planarization layer is coincident with and adjacent to the second layer, the structured first side of the backfill layer and structured first side of the planarization layer form a structured interface, the refractive index of the backfill layer is index matched to the first layer, and the refractive index of the planarization layer is index matched to the second layer.

A method for manufacturing an electroconductive pattern 40, provided with: a lamination step for laminating an acid generation film 10 containing an acid proliferation agent and a photoacid generator on a polymer film 20 containing an electroconductive polymer formed on a substrate 21; a masking step for masking the top of the acid generation film 10; a light irradiation step for irradiating the laminate from the acid-generation-film 10 side; a doping step for doping the electroconductive polymer with an acid generated and proliferated in the acid generation film 10 by the light irradiation; and a releasing step for releasing the acid generation film 10 from the polymer film 20. This method makes it possible to provide an electroconductive film and a method for manufacturing an electroconductive pattern in which photoacid generation and acid proliferation effects are utilized.

Intermittently photobleached mask with photobleachable and photobleached regions are described, as well as their fabrication and use to selectively release components from a substrate. Intermittently photobleached mask may allow a plurality of select components to be released simultaneously from a donor plate comprising a release layer, thereby facilitating component transfer.

A material for forming organic film contains (A) compound shown by general formula (1) and/or polymer having repeating unit shown by general formula (4), and (B) organic solvent. In formula (1), AR1, AR2, AR3, AR4, AR5, and AR6 each represent benzene ring or naphthalene ring; R1 represents any group shown in following formula (2); “n” represents integer of 1 or 2; and W represents divalent organic group having 2-50 carbon atoms. In formula (4), AR1, AR2, AR3, AR4, AR5, AR6, R1, “n”, and W are as defined above; and R2 and R3 each represent hydrogen atom or organic group having 1-20 carbon atoms, and optionally bond to each other within molecule to form cyclic organic group. An object provides a material for forming organic film to enable high etching resistance and excellent twisting resistance without impairing resin-derived carbon content; and compound and polymer suitable for material for forming organic film.

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A quantum dot light-emitting structure, a manufacturing method thereof and a display apparatus. The manufacturing method includes: providing quantum dot solution, the quantum dot solution including a first quantum dot which surface is modified with a first ligand and a photo-ligand remover, and the first ligand being dissolved in a rinsing solvent; coating the quantum dot solution on a base substrate to form a first quantum dot light-emitting material layer; partially exposing the first quantum dot light-emitting material layer, so that the first quantum dot light-emitting material layer includes an exposed portion and an unexposed portion, the photo-ligand remover being configured to release a ligand remover under irradiation, to remove the first ligand in the exposed portion of the first quantum dot light-emitting material layer; and developing and rinsing the exposed first quantum dot light-emitting material layer by using the rinsing solvent, to form the first quantum dot light-emitting layer.

A quantum dot light-emitting structure, a manufacturing method thereof and a display apparatus. The manufacturing method includes: providing quantum dot solution, the quantum dot solution including a first quantum dot which surface is modified with a first ligand and a photo-ligand remover, and the first ligand being dissolved in a rinsing solvent; coating the quantum dot solution on a base substrate to form a first quantum dot light-emitting material layer; partially exposing the first quantum dot light-emitting material layer, so that the first quantum dot light-emitting material layer includes an exposed portion and an unexposed portion, the photo-ligand remover being configured to release a ligand remover under irradiation, to remove the first ligand in the exposed portion of the first quantum dot light-emitting material layer; and developing and rinsing the exposed first quantum dot light-emitting material layer by using the rinsing solvent, to form the first quantum dot light-emitting layer.

An example flow cell includes a multi-layer stack including a transparent base support; a patterned sacrificial layer over the transparent base support; and a transparent layer over the patterned sacrificial layer. The flow cell further includes first and second functionalized layers over different portions of the transparent layer, wherein at least one of the first and second functionalized layers aligns with a pattern of the patterned sacrificial layer; and first and second primer sets respectively attached to the first and second functionalized layer.

The invention relates to a laser-ablatable mask film for the exposing of relief printing plates and screen printing stencils, comprising at least (i) a dimensionally stable base sheet, (ii) a UV-transparent adhesion layer, and (iii) a laser-ablatable mask layer, characterized in that the laser-ablatable mask layer (iii) comprises a) a binder comprising a crosslinked polyvinyl alcohol, b) a material which absorbs UV/VIS light and IR light, and c) optionally an inorganic filler.