Methods are disclosed to prepare permanent materials that can be coated onto microelectronic substrates or used for other structural or optical applications. The materials are thermally stable to at least about 300 C., curable using a photo or thermal process, exhibit good chemical resistance (including during metal passivation), and have a lifespan of at least about 5 years, preferably at least about 10 years, in the final device. Advantageously, these materials can also be bonded at room temperature. The materials exhibit no movement or squeeze-out after bonding and adhere to a variety of substrate types.

A mask plate and a manufacturing method thereof, a flexible substrate stripping apparatus and a flexible substrate stripping method are provided. The mask plate includes a laser-transmitting substrate and a patterned laser-shielding layer located on the laser transmitting substrate.

A method of graphene-enabled block copolymer lithography transfer to an arbitrary substrate comprising the steps of applying graphene on a surface, adding block copolymers to the graphene on the surface, phase-separating the block copolymers, forming nanopatterned phase separated block copolymers, delaminating the graphene, and transferring the graphene and nanopatterned phase separated block copolymers to a second surface. A layer of nanopatterned phase separated block copolymers on an arbitrary surface comprising a first arbitrary substrate absent of chemical preparation, a layer of graphene on the first arbitrary substrate, and a layer of phase-separated block copolymers on the layer of graphene, wherein the layer of phase-separated block copolymers on the layer of graphene was formed on a second substrate and delaminated via water liftoff and wherein the nanopatterned phase separated block copolymers are utilized as a shadow mask for lithography on the first arbitrary substrate.

This method includes: a step of imaging, by an imaging apparatus in a substrate treatment system, a reference substrate which is a reference for condition setting and acquiring a captured image of the reference substrate; a step of imaging, by the imaging apparatus, a treated substrate on which the predetermined treatment has been performed under a current treatment condition and acquiring a captured image of the treated substrate; a step of calculating a deviation amount in color information between the captured image of the treated substrate and the captured image of the reference substrate; a step of calculating a correction amount of the treatment condition based on a correlation model acquired in advance and on the deviation amount in the color information; and a step of setting the treatment condition based on the correction amount, wherein steps other than the step of acquiring a captured image of the reference substrate are performed for each of the treatment apparatuses.

A method for transferring an actual workpiece pattern (23) to a workpiece (24) using a pixelated phase mask (14) includes (i) evaluating a desired workpiece pattern (226) to identify a desired repetitive step cell (230) in the desired workpiece pattern (226), the desired repetitive step cell (230) having a desired step cell width (250), and a desired step cell length (252); (ii) evaluating if the desired step cell width (250) is equal to a first integer multiplied by a pixel width (28A) and an optical adjustment factor; and (iii) evaluating if the desired step cell length (252) is equal to a second integer multiplied by a pixel length (28B) and an optical adjustment factor.

A method for transferring an actual workpiece pattern (23) to a workpiece (24) using a pixelated phase mask (14) includes (i) evaluating a desired workpiece pattern (226) to identify a desired repetitive step cell (230) in the desired workpiece pattern (226), the desired repetitive step cell (230) having a desired step cell width (250), and a desired step cell length (252); (ii) evaluating if the desired step cell width (250) is equal to a first integer multiplied by a pixel width (28A) and an optical adjustment factor; and (iii) evaluating if the desired step cell length (252) is equal to a second integer multiplied by a pixel length (28B) and an optical adjustment factor.

A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A), and an organic solvent. The polymer is crosslinked by dehydrogenative coupling reaction involving hydrogen atoms located at the trityl position on the fluorene ring in each partial structure. Thus, the present invention provides: a composition for forming an organic film the composition containing such a thermosetting polymer with high carbon content as to enable high etching resistance and excellent twisting resistance; a patterning process using the composition; and a polymer suitable for the composition for forming an organic film

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A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A), and an organic solvent. The polymer is crosslinked by dehydrogenative coupling reaction involving hydrogen atoms located at the trityl position on the fluorene ring in each partial structure. Thus, the present invention provides: a composition for forming an organic film the composition containing such a thermosetting polymer with high carbon content as to enable high etching resistance and excellent twisting resistance; a patterning process using the composition; and a polymer suitable for the composition for forming an organic film

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A nanomaterial ribbon patterning method includes: forming a first nanomaterial layer having a first threshold strain on an upper surface of a substrate; forming a second nanomaterial layer on an upper surface of the first nanomaterial layer; forming a thin layer having a second threshold strain smaller than the first threshold strain on an upper surface of the second nanomaterial layer; generating plural cracks on the thin layer and the second nanomaterial layer by applying tensile force to the substrate; placing a mask on an upper surface of the thin layer; removing the mask and peeling off the sacrificial layer on the upper surface of the thin layer; and removing the sacrificial layer to form a nanomaterial ribbon pattern.

A nanomaterial ribbon patterning method includes: forming a first nanomaterial layer having a first threshold strain on an upper surface of a substrate; forming a second nanomaterial layer on an upper surface of the first nanomaterial layer; forming a thin layer having a second threshold strain smaller than the first threshold strain on an upper surface of the second nanomaterial layer; generating plural cracks on the thin layer and the second nanomaterial layer by applying tensile force to the substrate; placing a mask on an upper surface of the thin layer; removing the mask and peeling off the sacrificial layer on the upper surface of the thin layer; and removing the sacrificial layer to form a nanomaterial ribbon pattern.