A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: ##STR00001##
The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is linking group.

A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: ##STR00001##
The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is linking group.

A heat treatment device includes: a heating plate configured to support and heat a substrate on which a resist film is formed; a chamber configured to cover a processing space above the heating plate; a gas supply configured to supply a gas into the chamber along a gas flow path connected to an inside of the chamber, the gas flow path beginning from an outer periphery of the heating plate and extending along an upper surface of the heating toward an end portion on an outer periphery of the substrate; and an exhaust port configured to evacuate inside of the chamber through exhaust holes that are formed above the processing space and open downwards.

A method for forming a semiconductor device is provided. The method includes applying a photoresist composition over a substrate, thereby forming a photoresist layer over the substrate; performing a first baking process to the photoresist layer; exposing the photoresist layer to an extreme ultraviolet (EUV) radiation, thereby forming a pattern therein; performing a second baking process to the photoresist layer; and developing the photoresist layer having the pattern therein using a developer, thereby forming a patterned photoresist layer. The first baking process and the second baking process are conducted under an ambient atmosphere having a humidity level ranging from 55% to 100%.

A lithographic printing plate precursor is disclosed which comprises a support, a photopolymerizable image recording layer and an overcoat which comprises a low-molecular radical inhibitor. After image-wise exposure, the plate is heated whereby the radical inhibitor diffuses from the overcoat to the image recording layer, resulting in an increase of the daylight stability of the exposed and heated precursor. Such plate is especially suitable for on-press processing.

Provided is a resist underlayer film-forming composition that is used in a lithographic process in semiconductor manufacturing and has excellent storage stability. The resist underlayer film-forming composition contains: a polymer having a disulfide bond in a main chain; a radical trapping agent; and a solvent. The radical trapping agent is preferably a compound having a ring structure or a thioether structure. The ring structure is preferably an aromatic ring structure having 6-40 carbon atoms or a 2,2,6,6-tetramethylpiperidine structure.

Provided is a resist underlayer film-forming composition that is used in a lithographic process in semiconductor manufacturing and has excellent storage stability. The resist underlayer film-forming composition contains: a polymer having a disulfide bond in a main chain; a radical trapping agent; and a solvent. The radical trapping agent is preferably a compound having a ring structure or a thioether structure. The ring structure is preferably an aromatic ring structure having 6-40 carbon atoms or a 2,2,6,6-tetramethylpiperidine structure.

A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I): ##STR00001##
wherein, EWG, Y, R, and M.sup.+ are the same as described in the specification.

A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I): ##STR00001##
wherein, EWG, Y, R, and M.sup.+ are the same as described in the specification.

Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. Electrodes may be disposed adjacent the process volume and process fluid is provided to the process volume via a plurality of fluid conduits to facilitate immersion field guided post exposure bake processes. A post process chamber for rinsing, developing, and drying a substrate is also provided.