Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm). Production method that development is negative development with organic solvent.

A resist composition containing a base material component and a compound represented by General Formula (d0), in which in the formula, Rd.sup.0 represents a condensed cyclic group containing a condensed ring containing at least one aromatic rings, the condensed cyclic group having, as a substituent, an acid decomposable group which is decomposed under action of acid to form a polar group, Yd.sup.0 represents a divalent linking group or a single bond, M.sup.m+ represents an m-valent organic cation, and m represents an integer of 1 or more

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A resist composition containing a base material component and a compound represented by General Formula (d0), in which in the formula, Rd.sup.0 represents a condensed cyclic group containing a condensed ring containing at least one aromatic rings, the condensed cyclic group having, as a substituent, an acid decomposable group which is decomposed under action of acid to form a polar group, Yd.sup.0 represents a divalent linking group or a single bond, M.sup.m+ represents an m-valent organic cation, and m represents an integer of 1 or more

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There are provided a manufacturing method for a substrate having a conductive pattern, a manufacturing method for an electronic device, and a substrate having a conductive pattern, which are excellent in the dimensional stability of the conductive pattern after applying an electric current, as well as a protective film for a metal nanobody.

Provided are the manufacturing method for a substrate having a conductive pattern, comprising a step 1a of forming a conductive layer a containing a metal nanobody and a resin 1 on a substrate; a step 1b of forming a resin layer b containing a resin 2 on the conductive layer a; a step 2a of forming a photosensitive resin layer c on the resin layer b; a step 3 of obtaining a resin pattern c′ of the photosensitive resin layer by exposure and development treatment on the photosensitive resin layer c; a step 4 of removing the metal nanobody in the conductive layer a by etching to form a conductive pattern d; and a step 5a of softening or swelling at least one of the resin 1 or the resin 2, the manufacturing method for an electronic device, the substrate having a conductive pattern, and the protective film for a metal nanobody.

There are provided a manufacturing method for a substrate having a conductive pattern, a manufacturing method for an electronic device, and a substrate having a conductive pattern, which are excellent in the dimensional stability of the conductive pattern after applying an electric current, as well as a protective film for a metal nanobody.

Provided are the manufacturing method for a substrate having a conductive pattern, comprising a step 1a of forming a conductive layer a containing a metal nanobody and a resin 1 on a substrate; a step 1b of forming a resin layer b containing a resin 2 on the conductive layer a; a step 2a of forming a photosensitive resin layer c on the resin layer b; a step 3 of obtaining a resin pattern c′ of the photosensitive resin layer by exposure and development treatment on the photosensitive resin layer c; a step 4 of removing the metal nanobody in the conductive layer a by etching to form a conductive pattern d; and a step 5a of softening or swelling at least one of the resin 1 or the resin 2, the manufacturing method for an electronic device, the substrate having a conductive pattern, and the protective film for a metal nanobody.

The present disclosure provides a positive photoresist composition including a major adhesive material and a photosensitizer, wherein the photoresist composition further includes a photoisomerizable compound which would be converted into an ionic structure with an increased degree of molecular polarity after ultraviolet irradiation. The formation of the ionic structure with increased polarity of the molecule reduces the adhesion between the positive photoresist and the organic film layer, facilitates stripping after formation of the via, and improves the product rate of pass. Further, the present disclosure provides a via-forming method using the positive resist composition, a display substrate including the via formed by the via-forming method, and a display device including the display substrate.

The present disclosure provides a positive photoresist composition including a major adhesive material and a photosensitizer, wherein the photoresist composition further includes a photoisomerizable compound which would be converted into an ionic structure with an increased degree of molecular polarity after ultraviolet irradiation. The formation of the ionic structure with increased polarity of the molecule reduces the adhesion between the positive photoresist and the organic film layer, facilitates stripping after formation of the via, and improves the product rate of pass. Further, the present disclosure provides a via-forming method using the positive resist composition, a display substrate including the via formed by the via-forming method, and a display device including the display substrate.

A photosensitive resin composition comprising (A) a silicone resin comprising recurring units having formula (a1) and recurring units having formula (b1), (B) a filler, and (C) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which can be processed into a fine pattern in thick film form, has improved film properties like crack resistance, and is reliable as protective film. ##STR00001##

A photosensitive resin composition comprising (A) a silicone resin comprising recurring units having formula (a1) and recurring units having formula (b1), (B) a filler, and (C) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which can be processed into a fine pattern in thick film form, has improved film properties like crack resistance, and is reliable as protective film. ##STR00001##

A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.