G03F7/70008

GAMMA RAY GENERATOR AND METHOD OF GENERATING GAMMA RAY

A gamma ray generator includes a rotational shaft, a plurality of holders and a plurality of gamma ray sources. The holders are connected to the rotational shaft. The gamma ray sources are disposed in the holders respectively, wherein the holders respectively have an upper portion and a lower portion connecting to the upper portion, and the gamma ray source is placed at an interface between the upper portion and the lower portion.

LITHOGRAPHIC APPARATUS AND METHOD

A lithographic apparatus including: a radiation system; a frame; a substrate table for holding a substrate; and a scanning mechanism. The radiation system is operable to produce a radiation beam. The substrate table is moveably mounted to the frame and arranged such that a target portion of the substrate is arranged to receive the radiation beam. The scanning mechanism is operable to move the substrate table relative to the frame so that different portions of the substrate may receive the radiation beam. A mechanism is operable to determine a quantity indicative of a velocity of the radiation system relative to the frame. An adjustment mechanism is operable to control a power or irradiance of the radiation beam so as to reduce a variation in a dose of radiation received by the substrate as a result of relative motion of the radiation system and the frame.

Gamma ray generator and method of generating gamma ray

A gamma ray generator includes a rotational shaft, a plurality of holders and a plurality of gamma ray sources. The holders are connected to the rotational shaft. The gamma ray sources are disposed in the holders respectively, wherein the holders respectively have an upper portion and a lower portion connecting to the upper portion, and the gamma ray source is placed at an interface between the upper portion and the lower portion.

Data tuning for fast computation and polygonal manipulation simplification
09818168 · 2017-11-14 · ·

A data tuning software application platform relating to the ability to apply maskless lithography patterns to a substrate in a manufacturing process is disclosed in which the application processes graphical objects and configures the graphical objects for partition into a plurality of trapezoids. The trapezoids may be selectively merged in order to minimize the trapezoid count while limiting the loss of edge fidelity.

Patterning method and method for manufacturing array substrate

A patterning method and a method for manufacturing an array substrate are provided, and the patterning method includes: forming a photolithography auxiliary film and a positive photoresist film in turn on a base substrate provided with a layer to be patterned; subjecting the photolithography auxiliary film and the positive photoresist film to a photolithography process to form a photolithography auxiliary layer pattern and a positive photoresist pattern; patterning the layer to be patterned; and UV irradiating the photolithography auxiliary layer pattern and the positive photoresist pattern and then removing the photolithography auxiliary layer pattern and the positive photoresist pattern.

GAMMA RAY GENERATOR? GAMMA RAY LITHOGRAPHY SYSTEM AND METHOD OF PERFORMING GAMMA RAY LITHOGRAPHY

A gamma ray generator includes a plate, a plurality of holes and a plurality of gamma ray sources. The plate is configured to rotate along a rotational axis. The holes are disposed in the plate, and the holes are arranged in a matrix. The gamma ray sources are respectively placed in the holes.

METHOD FOR PREPARING JOSEPHSON JUNCTION AND PRODUCTION LINE DEVICE

A method and device for preparing a Josephson junction are provided. The method includes: preparing a photoresist film layer comprising an undercut structure on a substrate, the undercut structure comprising a first strip-shaped opening and a second strip-shaped opening; performing, at a first angle, evaporation on the photoresist film layer obliquely to the substrate, to prepare a first strip-shaped superconducting layer through the first strip-shaped opening; and performing, at a second angle, evaporation on the photoresist film layer obliquely to the substrate, to prepare a second strip-shaped superconducting layer through the second strip-shaped opening, the first strip-shaped superconducting layer and the second strip-shaped superconducting layer crossing each other, and an intersection of the first strip-shaped superconducting layer and the second strip-shaped superconducting layer being isolated by an oxidation layer to form a Josephson junction.

AN ILLUMINATION SOURCE AND ASSOCIATED METROLOGY APPARATUS

Disclosed is an illumination source comprising a gas delivery system being configured to provide a gas target for generating an emitted radiation at an interaction region of the gas target, and an interferometer for illuminating at least part of the gas target with an interferometer radiation to measure a property of the gas target.

Radiation source supply system for lithographic tools

Embodiments described herein provide a lithographic system having two or more lithographic tools connected to a radiation source using two or more variable attenuation units. In some embodiments, the variable attenuation unit reflects a portion of the received light beam to the lithographic tool attached thereto and transmits a remaining portion of the received light beam to the lithographic tools downstream. In some embodiments, the radiation source includes two or more laser sources to provide laser beams with an enhanced power level and which can prevent operation interruption due to laser source maintenances and repair.

OPTICAL COMPONENT FOR DEEP ULTRAVIOLET LIGHT SOURCE
20230375934 · 2023-11-23 ·

An optical component includes: a calcium fluoride substrate including an atomically-smooth substrate surface that forms at least a portion of an optically-interacting surface; and a sealant layer covering the atomically-smooth substrate surface to thereby form a smooth interface between the calcium fluoride substrate and the sealant layer. A profile roughness parameter Ra of the atomically-smooth substrate surface defined as a mean deviation of a profile of the atomically-smooth substrate surface is within a range of 0.01 nanometers (nm) to and including 0.17 nm.