A method of forming a semiconductor structure is disclosed. A multi-layer structure is formed over a substrate. A photoresist stack with a stepped sidewall is formed on the multi-layer structure. A pattern of the photoresist stack is transferred to the multi-layer structure.

In corner sections of first to fourth quadrants whose origin point is a center of an upper surface of a stage, three each of two-dimensional heads are provided. The three each of two-dimensional heads include one first head and two second heads. The stage is driven, while measuring a position of the stage using three first heads that face a two-dimensional grating of a scale plate provided above the stage from the four first heads, and during the driving, difference data of measurement values of the two second heads with respect to the first head in a measurement direction are taken in for head groups to which the three first heads belong, respectively, and using the difference data, grid errors are calibrated.

A digital masking system includes a supporting structure for supporting a material, and a pattern imaging apparatus. The pattern imaging apparatus includes a light source device, multiple imaging devices that convert light from the light source device into a plurality of light beams each representing an image, and a combiner that combines the light beams into a single light beam which is projected toward a material.

An illumination adjustment apparatus, to adjust a cross slot illumination of a beam in a lithographic apparatus, includes a plurality of fingers to adjust the cross slot illumination to conform to a selected intensity profile. Each finger has a distal edge that includes at least two segments. The two segments form an indentation of the distal edge.

A mixed acrylate-siloxane polymer can be used to create three-dimensional (3D) structures of arbitrary shape via nanolithography. Treatment of such structures with amine (such as diamine) makes them permissive for neuronal cell adhesion and growth without need of additional modification such as poly-lysine (D or L) nor laminin.

A mixed acrylate-siloxane polymer can be used to create three-dimensional (3D) structures of arbitrary shape via nanolithography. Treatment of such structures with amine (such as diamine) makes them permissive for neuronal cell adhesion and growth without need of additional modification such as poly-lysine (D or L) nor laminin.

A semiconductor process system includes an ion source configured to bombard with a photoresist structure on a wafer. The semiconductor process system reduces a width of the photoresist structure by bombarding the photoresist structure with ions in multiple distinct ion bombardment steps having different characteristics.

A substrate processing apparatus and method for effectively removing an organic material such as a photoresist without using sulfuric acid are provided. The substrate processing apparatus includes a support module, in which a substrate is inverted and seated, and an ultraviolet light source is installed, wherein the substrate is arranged so that one surface of the substrate faces the support module, and the ultraviolet light source irradiates ultraviolet rays to one surface of the substrate; a nozzle installed in the support module; and a fluid supply module for supplying a fluid to one surface of the substrate through the nozzle.

An optical apparatus, which illuminates a first area with light from a light source while the first area is longer in a second direction intersecting a first direction than in the first direction, includes a collector optical member which is arranged in an optical path between the light source and the first area, and condenses the light from the light source to form a second area in a predetermined plane, the second area being longer in a fourth direction intersecting a third direction than in the third direction; and a first fly's eye optical member which is provided within the predetermined plane including the second area, and has a plurality of first optical elements guiding the light of the collector optical member to the first area.

A method for printing a periodic pattern of linear features into a photosensitive layer which includes providing a mask bearing a pattern of linear features, arranging the substrate parallel to the mask, generating an elongated beam for illuminating the mask with a range of angles of incidence in a plane parallel to the linear features and with a uniform power per incremental distance along the length of the beam except at its ends where the power per incremental distance falls to zero according to first and second profiles over a fall-off distance, and scanning the beam in first and second sub-exposures to print first and second parts of the desired pattern such that the first and second parts overlap by the fall-off distance. The first and second profiles are selected so that their summation across the fall-off distance produces a uniform power per incremental distance.