A mixed acrylate-siloxane polymer can be used to create three-dimensional (3D) structures of arbitrary shape via nanolithography. Treatment of such structures with amine (such as diamine) makes them permissive for neuronal cell adhesion and growth without need of additional modification such as poly-lysine (D or L) nor laminin.

An illumination adjustment apparatus, to adjust a cross slot illumination of a beam in a lithographic apparatus, includes a plurality of fingers to adjust the cross slot illumination to conform to a selected intensity profile. Each finger has a distal edge that includes at least two segments. The two segments form an indentation of the distal edge.

A tin trap device may include a housing including a gas inlet port into which gas containing tin flows from a chamber device, an internal space which communicates with the gas inlet port, and a gas exhaust port which exhausts the gas while communicating with the internal space; a multiple tube including a plurality of tube members, arranged on a flow path of the gas traveling to the gas exhaust port from the gas inlet port through the internal space, and having a temperature at which the tin deposited from the gas adheres to the tube member; and a gas travel direction changing member configured to change a travel direction of at least fastest gas of the gas traveling from the gas inlet port to the multiple tube.

A film forming apparatus for forming a film on a substrate includes a driver configured to bring a curable composition arranged on the substrate and a flat surface into contact with each other, a heater configured to heat the curable composition by electromagnetic waves to reduce the viscosity of the curable composition and make the curable composition conform to the flat surface, and a curing device configured to form a film made of a cured product of the curable composition by curing the curable composition in a state in which the curable composition conforms to the flat surface.

An extreme ultraviolet light generation apparatus is an apparatus to generate extreme ultraviolet light by irradiating a target with laser light, and may include a target supply unit configured to output the target, an actuator configured to shift a trajectory of the target, a first trajectory sensor configured to detect the trajectory of the target in a first direction, a second trajectory sensor configured to detect the trajectory of the target in a second direction being different from the first direction, and a control unit configured to perform trajectory control including controlling the actuator to cause the second trajectory sensor to be capable of detecting the trajectory of the target when the trajectory of the target has been detected by the first trajectory sensor and has not been detected by the second trajectory sensor.

In one embodiment, a semiconductor manufacturing apparatus includes a stage on which a substrate is to be installed. The apparatus further includes a light source configured to generate light. The apparatus further includes a shaper including a rotating portion provided with an opening configured to shape the light from the light source, the shaper being configured to irradiate a photomask with the light which has passed through the opening. The apparatus further includes a controller configured to change a width of the light passing through the opening by rotating the rotating portion while scanning the substrate by the light which has passed through the photomask.

A method of processing a substrate, includes emitting light including vacuum ultraviolet light to a front surface of the substrate, which has a resist film formed thereon from a resist material for EUV lithography, before an exposure process in an interior of a processing container.

A semiconductor process system includes an ion source configured to bombard with a photoresist structure on a wafer. The semiconductor process system reduces a width of the photoresist structure by bombarding the photoresist structure with ions in multiple distinct ion bombardment steps having different characteristics.

A super-resolution system for nano-patterning is disclosed, comprising an exposure head that enables a super-resolution patterning exposures. The super-resolution exposures are carried out using electromagnetic radiation and plasmonic structures, and in some embodiments, plasmonic structures having specially designed super-resolution apertures, of which the “bow-tie” and “C-aperture” are examples. These apertures create small but bright images in the near-field transmission pattern. A writing head comprising one or more of these apertures is held in close proximity to a medium for patterning. In some embodiments, a data processing system is provided to re-interpret the data to be patterned into a set of modulation signals used to drive the multiple individual channels and multiple exposures, and a detection means is provided to verify the data as written.

An extreme ultraviolet light generation apparatus is an apparatus to generate extreme ultraviolet light by irradiating a target with laser light, and may include a target supply unit configured to output the target, an actuator configured to shift a trajectory of the target, a first trajectory sensor configured to detect the trajectory of the target in a first direction, a second trajectory sensor configured to detect the trajectory of the target in a second direction being different from the first direction, and a control unit configured to perform trajectory control including controlling the actuator to cause the second trajectory sensor to be capable of detecting the trajectory of the target when the trajectory of the target has been detected by the first trajectory sensor and has not been detected by the second trajectory sensor.