Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.

A method of determining a desired relative position between a first object of a lithographic apparatus and a second object of the lithographic apparatus. Generating a measurement signal representing a position of the first object relative to the second object, at an initial relative position. Determining a gradient associated with the initial relative position, based on the measurement signal. Determining a position set point based on the gradient and wherein the position set point comprises a three-dimensional dither signal. Controlling the position of the first object relative to the second object to a further relative position, based on the position set point.

A mask structure for a deposition device includes first segments and second segments. The first segments are arranged in a direction surrounding a central axis and separated from one another. The second segments are disposed above the first segments. Each of the second segments overlaps two of the first segments adjacent to each other in a vertical direction parallel to an extending direction of the central axis. A deposition device includes a process chamber, a stage, and the mask structure. The stage is at least partially disposed in the process chamber and includes a holding structure of a substrate. The mask structure is disposed in the process chamber, located over the stage, and covers a peripheral region of the substrate to be held on the stage. An operation method of the deposition device includes horizontally adjusting positions of the first segments and the second segments respectively between different deposition processes.

An optical system transfers original structure portions (13) of a lithography mask (10), which have an x/y-aspect ratio of greater than 4:1, and are aligned on the lithography mask, separated respectively by separating portions (14) that carry no structures to be imaged. The optical system transfers the original structure portions onto image portions (31) of a substrate (26). Each of the original structure portions is transferred to a separate image portion. The image portions onto which the original structure portions are transferred are arranged in a line next to one another. An associated projection optical unit may have an anamorphic embodiment with different imaging scales for two mutually perpendicular field coordinates specifically, one that is reducing for one of the field coordinates and the other is magnifying for the other field coordinates.

A reflective optical element for the extreme ultraviolet (EUV) wavelength range having a multi-layer system extending over an area on a substrate. The system includes layers (54, 55′) made of at least two different materials with different real parts of the refractive index in the EUV arranged alternately. A layer of one of the two materials forms a stack with the layer or layers arranged between this layer and the nearest layer of the same material with increasing distance from the substrate. In at least one stack (53′), the material of the layer (55′) with the lower real part of the refractive index and/or the material of the layer (54) with the larger real part of the refractive index is a combination (551, 552) made of at least two substances.

The invention relates to a system (2) for producing an optical mask (35) for surface microtexturing, said system (2) comprising: a substrate (10) having a surface (11) that is to be textured; a layer of material (20) which covers the surface (11) of the substrate (10) and has an outer surface (21) that is exposed to the outside environment; and a generating and depositing device for generating and depositing droplets (30) on the outer surface (21) of the layer of material (20), in a specific arrangement (31) under condensation, forming the optical mask (35) on the outer surface (21) of the layer of material (20). The invention also relates to a treatment plant comprising a system (2) of said type. The invention further relates to a method for producing a mask as well as to a surface microtexturing method.

Method of and apparatus for repairing an optical element disposed in a vacuum chamber while the optical element is in the vacuum chamber. An exposed surface of the optical element is exposed to an ion flux generated by an ion source to remove at least some areas of the surface that have been damaged by exposure to the environment within the vacuum chamber. The method and apparatus are especially applicable to repair multilayer mirrors serving as collectors in systems for generating EUV light for use in semiconductor photolithography.

An optical system transfers original structure portions (13) of a lithography mask (10), which have an x/y-aspect ratio of greater than 4:1, and are aligned on the lithography mask, separated respectively by separating portions (14) that carry no structures to be imaged. The optical system transfers the original structure portions onto image portions (31) of a substrate (26). Each of the original structure portions is transferred to a separate image portion. The image portions onto which the original structure portions are transferred are arranged in a line next to one another. An associated projection optical unit may have an anamorphic embodiment with different imaging scales for two mutually perpendicular field coordinates specifically, one that is reducing for one of the field coordinates and the other is magnifying for the other field coordinates.

An exposure apparatus that projects a pattern of an original onto a substrate via a projection optical system and exposes the substrate is provided. The apparatus comprises an aberration correction member arranged on an optical path of exposure light between the original and the substrate, and a driver which drives the aberration correction member. The aberration correction member includes a first optical element including a first surface having a three-fold rotational symmetric aspherical shape with respect to an optical axis of the exposure light, and a second optical element spaced apart from the first optical element along the optical axis and including a second surface facing the first surface and having an aspherical shape that complementarily corrects an aberration generated by the first optical element.

A substrate and a preparation method thereof, and a display panel are provided. The substrate includes a base substrate. The substrate includes a plurality of units, and a cutting region is between at least two adjacent units; the substrate further includes a first protruding portion, which is on the base substrate and in the cutting region; and a position of the first protruding portion corresponds to a position of an exposure gap measure window of a mask.