The disclosure relates to a lithography apparatus for writing to substrate wafers. The apparatus includes: a light generating device including one or a plurality of light sources for generating light; a writing device; a light transferring device including a number of optical waveguides for transferring the light from the light generating device to a writing device, the writing device including a plurality of individually controllable write heads for projecting the light from the one or the plurality of light sources in different regions of a substrate wafer; a transport device for moving the substrate wafer relative to the writing device in a predefined transport direction; and a control device for controlling the writing process on the substrate wafer.

Disclosed is a method for lithographically producing a target structure on a non-planar initial structure by exposing a photoresist by means of a lithography beam. In the inventive method, the topography of a surface of the non-planar initial structure is detected. A test parameter for the lithography beam is used and an interaction of the lithography beam with the initial structure and the resultant change in the lithography beam and/or the target structure to be produced are determined. A correction parameter for the lithography beam is determined such that the change in the lithography beam and/or the target structure to be produced that is caused by the interaction of the lithography beam with the initial structure is reduced. The desired target structure on the initial structure is produced by exposing the photoresist by means of the lithography beam using the correction parameter.

The disclosed technology teaches a method of reducing the impact of cross-talk between transducers that drive an acousto-optic modulator. The method includes operating the transducers, which are mechanically coupled to an acousto-optic modulator medium, with different frequencies applied to adjoining transducers and producing a time-varying phase relationship between carriers on spatially adjoining modulation channels emanating from the adjoining transducers, with a frequency separation between carriers on the adjoining channels of 400 KHz to 20 MHz. The disclosed technology also includes operating 5 to 32 modulators, which are mechanically coupled to the acousto-optic modulator crystal, and varying the different frequencies applied to the modulators in a sawtooth pattern, varying the different frequencies over a range and then repeating variation over the range. Also included is varying the frequencies applied to the modulators in a rising or falling pattern applied progressively to the spatially adjoining transducers.

The technology disclosed uses extreme beam shaping to increase the amount of energy projected through an AOD. First and second expanders and are described that are positioned before and after the AOD. In one implementation, the optical path shapes energy from a source, such as a Gaussian laser spot, deflects it, then reshapes it into a writing spot. In another implementation for image capture, rather than projection system, the disclosed optics reshape a reading spot from an imaged surface to a high-aspect ratio beam at an AOD exit, subject to deflection by the AOD. The optics reshape the radiation relayed by the high-aspect ratio beam through the AOD to a detector. Since light can travel in both directions through an optical system, the details described in terms of projecting a writing spot onto a radiation sensitive surface also apply to metrology sweeping a reading spot over an imaged surface.

A method for generating and updating position distribution graph comprises: generating a position distribution graph according to a circuit bitmap and an exposure pattern, performing an exposure simulation according to the position distribution graph to generate an exposure result graph, comparing the circuit bitmap with the exposure result graph to generate a plurality of error distribution candidate graphs, selecting one of the error distribution candidate graphs to serve as an error distribution graph, and performing a zero-one integer programming to update the position distribution graph according to the circuit bitmap and the error distribution graph, wherein the updated position distribution graph is associated with the error distribution graph.

A method for processing print data defining a pattern to be printed comprises obtaining (S10) of vector print data for the pattern to be printed. The vector print data is divided (S12) into vector print data of scan strips, wherein each scan strip is associated with a scan velocity. A skew transformation of the vector print data is performed (S14) in each scan strip. The skew transformation is performed in a direction opposite to respective scan velocity and with a magnitude proportional to a magnitude of the scan velocity. A method for printing a pattern, a device for processing print data and a printing device according to the same principles are also disclosed.

Methods of fabricating an object via direct laser lithography are provided. In embodiments, such a method comprises illuminating, via an optical fiber having an end facet and a metalens directly on the end facet, a location within a photosensitive composition from which an object is to be fabricated with light, thereby inducing a multiphoton process within the photosensitive composition to generate a region of the object; and repeating the illuminating step one or more additional times at one or more additional locations to generate one or more additional regions of the object.

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with an actively-focused laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

A drawing method for drawing a wiring pattern on a substrate is provided. The wiring pattern includes first regions, in which a pattern in the width direction of the substrate changes in the longitudinal direction of that, and second regions, in which a pattern in the width direction does not change in the longitudinal direction. The drawing data includes two-dimensional image data representing a two-dimensional pattern of the first regions, one-dimensional image data representing a one-dimensional pattern in the width direction of the second regions, and information representing lengths of the second regions. The method includes: drawing the pattern of the first regions by scanning the beam based on the two-dimensional image data and conveying the substrate; and drawing the pattern of the second regions by irradiating the substrate with the beam based on the one-dimensional image data and conveying the substrate based on the information representing lengths.

Provided are an integrated super-resolution laser direct-writing device and a direct-writing method. The integrated super-resolution laser direct-writing device includes a first continuous laser, a first optical fiber coupler, a mono-mode optical fiber, a second continuous laser, a second optical fiber coupler, a first annular photonic crystal fiber, a bifurcated optical fiber, a lens group, a first dichroic mirror, an LED light source, a lens, a second dichroic mirror, an auto-focusing module, a third dichroic mirror, a third optical fiber coupler, a square-law graded index fiber, a nanometer displacement table, a second lens, a CMOS camera and a control system. According to the present invention, an original large direct-writing device based on a free optical path can achieve optical fibers of key devices and integration of systems and can be better applied to the field of laser direct-writing.