A laser patterning method may include fabricating one or more precursor sites on a sample, generating an illumination beam including one or more pulse bursts, each pulse burst including two or more laser pulses, and scanning the illumination beam across the sample along a scan pattern including locations of the one or more precursor sites. At least one of intensities, temporal inter-pulse spacings, or spatial overlap between the two or more laser pulses in the illumination beam may be selected to selectively excite the one or more precursor sites to selectively modify the sample at the one or more precursor sites to form one or more patterned features, where a dimension of at least one feature in the one or more patterned features along at least one dimension is smaller than a size of the illumination beam on the sample.

A composition for forming a silicon-containing resist underlayer film includes: a thermosetting silicon-containing material containing any one or more of a partial structure shown by the general formula (Sx-1), (Sx-2), and (Sx-3); and a compound shown by the general formula (P-0), where R.sup.1 represents an organic group that has or generates a silanol group, a hydroxy group, or a carboxy group; R.sup.2 and R.sup.3 are each independently the same as R.sup.1 or each represent a hydrogen atom or a monovalent substituent having 1 to 30 carbon atoms; R.sup.100 represents a divalent organic group substituted with a fluorine atom; R.sup.101 and R.sup.102 each independently represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; R.sup.103 represents a divalent hydrocarbon group having 1 to 20 carbon atoms; and L.sup.104 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms.

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A method for processing print data defining a pattern to be printed comprises obtaining (S10) of vector print data for the pattern to be printed. The vector print data is divided (S12) into vector print data of scan strips, wherein each scan strip is associated with a scan velocity. A skew transformation of the vector print data is performed (S14) in each scan strip. The skew transformation is performed in a direction opposite to respective scan velocity and with a magnitude proportional to a magnitude of the scan velocity. A method for printing a pattern, a device for processing print data and a printing device according to the same principles are also disclosed.

A method of creating electronic devices such as semiconductor chips using a maskless lithographic exposure system such as a charged particle multi-beamlet lithography system (301A-301D). The maskless lithographic exposure system comprises a lithography subsystem (316) including a maskless pattern writer such as a charged particle multi-beamlet lithography machine (1) or ebeam machine. The method comprises introducing unique chip design data (430) or information related thereto into pattern data comprising common chip design data before streaming the pattern data to the maskless pattern writer.

Techniques for making fluid flow devices are described. The technique is based on radiation-induced conversion of a radiation-sensitive substance from a first state to a second state. With adjustment of the radiation parameters such as power and scan speed we can control the depths of barriers that are formed within a substrate which can produce 3D flow paths. We have used this depth-variable patterning protocol for stacking and sealing of multilayer substrates, for assembly of backing layers for two-dimensional (2D) lateral flow devices and for fabrication of 3D devices. Since the 3D flow paths can be formed via a single laser-writing process by controlling the patterning parameters, this is a distinct improvement over other methods that require multiple complicated and repetitive assembly procedures.

The disclosed technology teaches a method of reducing the impact of cross-talk between transducers that drive an acousto-optic modulator. The method includes operating the transducers, which are mechanically coupled to an acousto-optic modulator medium, with different frequencies applied to adjoining transducers and producing a time-varying phase relationship between carriers on spatially adjoining modulation channels emanating from the adjoining transducers, with a frequency separation between carriers on the adjoining channels of 400 KHz to 20 MHz. The disclosed technology also includes operating 5 to 32 modulators, which are mechanically coupled to the acousto-optic modulator crystal, and varying the different frequencies applied to the modulators in a sawtooth pattern, varying the different frequencies over a range and then repeating variation over the range. Also included is varying the frequencies applied to the modulators in a rising or falling pattern applied progressively to the spatially adjoining transducers.

A lithography method to pattern a first semiconductor wafer is disclosed. An optical mask is positioned over the first semiconductor wafer. A first region of the first semiconductor wafer is patterned by directing light from a light source through transparent regions of the optical mask. A second region of the first semiconductor wafer is patterned by directing energy from an energy source to the second region, wherein the patterning of the second region comprises direct-beam writing.

According to one embodiment, a scanning light measuring apparatus includes a support table, a light-emission control circuit, a light-receiving element, a moving mechanism, and a measurement control circuit. An optical unit is placed on the support table. The optical unit has a synchronous detection sensor that forms scanning light and detects the scanning light. The light-emission control circuit controls the light-emission time of the scanning light. The light-receiving element receives the scanning light. The moving mechanism supports the light-receiving element so as to be movable in a main scanning direction and a rotation direction around an axis orthogonal to the main scanning direction and an optical axis direction of the scanning light. The measurement control circuit moves the light-receiving element in the main scanning direction by the moving mechanism, scans the light-receiving element with the scanning light, acquires an output of the light-receiving element, and measures a scanning light diameter.

The technology disclosed relates to high utilization of donor material in a writing process using Laser-Induced Forward Transfer. Specifically, the technology relates to reusing, or recycling, unused donor material by recoating target substrates with donor material after a writing process is performed with the target substrate. Further, the technology relates to target substrates including a pattern of discrete separated dots to be individually ejected from the target substrate using LIFT.

Aspects of disclosure provide a method for attaching wiring connections to a component using both design and field measured data of the component to produce accurate wiring connections.