Methods for forming microstructures in photocurable material are described. At least one image of light or radiation for curing the photocurable material is applied in a pattern corresponding to the image. The image is formed by near-field diffraction of the light or radiation and comprises areas of higher intensity adjacent to areas of lower intensity.

A stage device includes a stage capable of moving in a first direction and a second direction orthogonal to each other, a scale arranged in the stage so as to extend in the first direction, an optical assembly arranged so as to face the scale in at least a part of a movable range of the stage and extending in the second direction, and an interferometer configured to transmit measurement light and reference light to the optical assembly, and receive the measurement light and the reference light returning from the optical assembly. The optical assembly is configured to apply the measurement light from the interferometer to the scale, and return the measurement light returning from the scale and the reference light to the interferometer.

The invention provides a light generating method and system, the method including: generating first light, the first light being capable of forming a first area, a second area, and a third area, and intensity of the first light in the first area being higher than that in the second area and the third area, respectively; generating second light, the second light being capable of simultaneously irradiating the first area and the second area; generating third light, the third light being capable of simultaneously irradiating the first area and the third area; and controlling intensity of the second light and the third light, respectively. The light generating method and system provided by the invention can not only generate light having a super-resolution that may approach infinitesimal in theory but also employ light output by a laser as the only original light source, featuring extremely low costs and freedom from the diffraction limit of the light source, showing a great prospect of applications in the field of lithography.

This disclosure of a scanner and method is a new way of removing non-uniformities from optical interference patterns.

Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.

A method for fabricating a nano-structure includes: providing a phase mask having an uneven lattice structure to contact a photoresist film; exposing the photoresist film to a light through the phase mask such that the light is obliquely incident on a surface of the photoresist film; and developing the photoresist film to form a nano-structure.

A compensator for manipulating a radiation beam traveling along an optical path. The compensator includes a fixed support holding a first optical wedge and an adjustable support holding a second optical wedge. The adjustable support includes a base, a stage holding the second optical wedge, first and second flexures, and a drive block. The stage defines a cavity and is movable relative to the base and the fixed support. The first and second flexures couple the stage to the base such that the stage translates along a stage path. The drive block is disposed in the cavity of the stage and is configured to translate along a drive block path perpendicular to the optical path and perpendicular to the stage path. The drive block includes first and second drive bearing surfaces configured to translate the stage in first and second stage directions, respectively, along the stage path.

Example embodiments relate to methods and devices for generating (quasi-) periodic interference patterns. One embodiment includes a method for generating an interference pattern using multi-beam interference of electromagnetic radiation. The method includes computing a set of grid points in a complex plane representing a grid with a desired symmetry. The method also includes selecting a radius of a virtual circle. Additionally, the method includes selecting a set of grid points in the complex plane that lies on the virtual circle centered around a virtual center point. Further, the method includes associating an argument of each grid point of the selected set of grid points in the complex plane with a propagation direction of plane waves or quasi plane waves or parallel wave fronts. In addition, the method includes obtaining the interference pattern that is a superposition of the plane waves or quasi plane waves or parallel wave fronts.

In accordance with some aspects of the present disclosure, a maskless interferometric lithography system for fabricating a three-dimensional (3D) photonic crystal using a multiple two-beam-exposures is disclosed. The system can comprise an illumination system comprising an optical arrangement operable to receive radiation from a radiation source and provide three or more tilted two-beam interference pattern exposures to be combined into a three-dimensional pattern; and a substrate operable to be supported by a substrate table, wherein the substrate comprises a photoresist formed on a top surface of the substrate and operable to receive the three-dimensional pattern and wherein means are provided to adjust the position of the substrate in all six mechanical degrees of freedom.

Embodiments described herein provide a method of large area lithography to decrease widths of portions written into photoresists. One embodiment of the method includes projecting an initial light beam of a plurality of light beams at a minimum wavelength to a mask in a propagation direction of the plurality of light beams. The mask has a plurality of dispersive elements. A wavelength of each light beam of the plurality of light beams is increased until a final light beam of the plurality of light beams is projected at a maximum wavelength. The plurality of dispersive elements of the mask diffract the plurality of light beams into order mode beams to produce an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern having a plurality of intensity peaks writes a plurality of portions in the photoresist layer.