G03F9/7003

Method and apparatus to determine a patterning process parameter

A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.

SUBSTRATE MEASURING DEVICE AND A METHOD OF USING THE SAME
20210341841 · 2021-11-04 ·

Embodiments of the present disclosure provide a substrate measuring device in a lithography projection apparatus that provides multiple light sources having different wavelengths. In some embodiments, a lithography projection apparatus includes a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further including an emitter including multiple light sources configured to provide multiple beams of light, each of at least some of the multiple beams of light having a different wavelength, at least one optical fiber, wherein each of respective portions of the at least one optical fiber is configured to pass a respective one of the multiple beams of light, and a receiver positioned to collected light emitted from the emitter and reflected off of a substrate disposed on the substrate stage.

System and method for optimizing a lithography exposure process

A method for correcting misalignments is provided. An alignment for each device of a group of devices mounted on a substrate is determined. An alignment error for the group of devices mounted on the substrate is determined based on the respective alignment for each device. One or more correction factors are calculated based on the alignment error. The alignment error is corrected based on the one or more correction factors.

Sensor Apparatus for Lithographic Measurements
20210239654 · 2021-08-05 · ·

A sensor apparatus comprising an acoustic assembly arranged to transmit an acoustic signal to a substrate and receive at least part of the acoustic signal after the acoustic signal has interacted with the substrate, a transducer arranged to convert the at least part of the acoustic signal to an electronic signal, and, a processor configured to receive the electronic signal and determine both a topography of at least part of the substrate and a position of a target of the substrate based on the electronic signal. The sensor apparatus may for part of a lithographic apparatus or a metrology apparatus.

Method and apparatus for optimization of lithographic process

A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.

Maintaining a set of process fingerprints

A method of maintaining a set of fingerprints representing variation of one or more process parameters across wafers subjected to a device manufacturing method, the method including: receiving measurement data of one or more parameters measured on wafers; updating the set of fingerprints based on an expected evolution of the one or more process parameters; and evaluation of the updated set of fingerprints based on decomposition of the received measurement data in terms of the updated set of fingerprints. Each fingerprint may have a stored likelihood of occurrence, and the decomposition may involve: estimating, based the received measurement data, likelihoods of occurrence of the set of fingerprints in the received measurement data; and updating the stored likelihoods of occurrence based on the estimated likelihoods.

Method and apparatus to determine a patterning process parameter

A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.

Method and apparatus to determine a patterning process parameter

A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.

Substrate measuring device and a method of using the same

Embodiments of the present disclosure provide a substrate measuring device in a lithography projection apparatus that provides multiple light sources having different wavelengths. In some embodiments, a lithography projection apparatus includes a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further including an emitter including multiple light sources configured to provide multiple beams of light, each of at least some of the multiple beams of light having a different wavelength, at least one optical fiber, wherein each of respective portions of the at least one optical fiber is configured to pass a respective one of the multiple beams of light, and a receiver positioned to collected light emitted from the emitter and reflected off of a substrate disposed on the substrate stage.

CYLINDRICAL SEMICONDUCTOR INTEGRATED CIRCUITS AND CONCENTRIC PHOTOLITHOGRAPHY FOR THE FABRICATION THEREOF
20210223697 · 2021-07-22 ·

An integrated circuit comprises a silicon cylinder having a sidewall upon which a plurality of semiconductor devices have been printed, one or more electrical leads electrically connected to each semiconductor device, and a plurality of radial wiring interconnects projecting outward from the sidewall.