A non-volatile storage apparatus is proposed that includes a plurality of serially connected non-volatile reversible resistance-switching memory cells, a plurality of word lines such that each of the memory cells is connected to a different word line, a bit line connected to a first end of the serially connected memory cells and a switch connected to a second end of the serially connected memory cells. In one embodiment, the memory cells include a reversible resistance-switching structure comprising a first material, a second material and a reversible resistance-switching interface between the first material and the second material, a channel, and means for switching current between current flowing through the channel and current flowing through the reversible resistance-switching interface in order to program and read the reversible resistance-switching interface. A process for manufacturing the memory is also disclosed.

A non-volatile storage apparatus is proposed that includes a plurality of serially connected non-volatile reversible resistance-switching memory cells, a plurality of word lines such that each of the memory cells is connected to a different word line, a bit line connected to a first end of the serially connected memory cells and a switch connected to a second end of the serially connected memory cells. In one embodiment, the memory cells include a reversible resistance-switching structure comprising a first material, a second material and a reversible resistance-switching interface between the first material and the second material, a channel, and means for switching current between current flowing through the channel and current flowing through the reversible resistance-switching interface in order to program and read the reversible resistance-switching interface. A process for manufacturing the memory is also disclosed.

A non-volatile storage apparatus is proposed that includes a plurality of serially connected non-volatile reversible resistance-switching memory cells, a plurality of word lines such that each of the memory cells is connected to a different word line, a bit line connected to a first end of the serially connected memory cells and a switch connected to a second end of the serially connected memory cells. In one embodiment, the memory cells include a reversible resistance-switching structure comprising a first material, a second material and a reversible resistance-switching interface between the first material and the second material, a channel, and means for switching current between current flowing through the channel and current flowing through the reversible resistance-switching interface in order to program and read the reversible resistance-switching interface. A process for manufacturing the memory is also disclosed.

A non-volatile storage apparatus is proposed that includes a plurality of serially connected non-volatile reversible resistance-switching memory cells, a plurality of word lines such that each of the memory cells is connected to a different word line, a bit line connected to a first end of the serially connected memory cells and a switch connected to a second end of the serially connected memory cells. In one embodiment, the memory cells include a reversible resistance-switching structure comprising a first material, a second material and a reversible resistance-switching interface between the first material and the second material, a channel, and means for switching current between current flowing through the channel and current flowing through the reversible resistance-switching interface in order to program and read the reversible resistance-switching interface. A process for manufacturing the memory is also disclosed.

Method for producing a directed monolayer or multilayer assembly of colloidal nanoparticles attached to an electret substrate, including imparting a surface electric potential to an electret substrate according to a pattern of positive and/or negative electric charges, and contacting an electret substrate with a colloidal dispersion. The colloidal dispersion has electrically neutral or near neutral and electrically polarizable colloidal nanoparticles, and a nonpolarizing or weakly polarizing dispersion medium. The absolute value of the surface electric potential and the concentration of polarizable nanoparticles are no lower than a first surface electric potential threshold and no lower than a second concentration threshold, respectively, such as to obtain an assembly having a desired geometric shape, at least the first layer of which is compact in terms of the absence of undesired gaps having sizes greater than the size of two adjacent nanoparticles, preferably not greater than the size of one nanoparticle.

Method for producing a directed monolayer or multilayer assembly of colloidal nanoparticles attached to an electret substrate, including imparting a surface electric potential to an electret substrate according to a pattern of positive and/or negative electric charges, and contacting an electret substrate with a colloidal dispersion. The colloidal dispersion has electrically neutral or near neutral and electrically polarizable colloidal nanoparticles, and a nonpolarizing or weakly polarizing dispersion medium. The absolute value of the surface electric potential and the concentration of polarizable nanoparticles are no lower than a first surface electric potential threshold and no lower than a second concentration threshold, respectively, such as to obtain an assembly having a desired geometric shape, at least the first layer of which is compact in terms of the absence of undesired gaps having sizes greater than the size of two adjacent nanoparticles, preferably not greater than the size of one nanoparticle.