A memory device may receive a read request describing a logical address at the memory device. The memory device may obtain a table entry associated with the logical address. The table entry comprises a physical address corresponding to the logical address and a write temperature data indicating a write temperature for the logical address. The memory device may determine a corrected threshold voltage for reading the physical address based at least in part on the write temperature data and read the physical address using the corrected threshold voltage.

A flash memory initialization method executed by a flash memory initialization device to initialize a flash memory device having a flash memory and a flash memory controller includes: determining an acceptable maximum number N of candidate addresses; determining a number M of different capacity sizes; classifying the candidate addresses into M portions; determining a difference value between two address values of any two adjacent addresses among the m-th portion of candidate addresses; determining multiple address values of the m-th portion of candidate addresses according to the difference value; and determining actual addresses of the m-th portion of candidate addresses according to the multiple address values; and controlling the flash memory controller to write the boot up information into at least one storage location corresponding to at least one of the m-th portion of candidate addresses according to the actual addresses.

Methods, systems, techniques, and devices for smart factory reset procedures are described. In accordance with examples as disclosed herein, a memory system may receive one or more commands associated with a reset procedure. The memory system may identify, in response to the one or more commands, a first portion of one or more memory arrays of the memory system as storing user data and a second portion of the one or more memory arrays as storing data associated with an operating system. The memory system may update a mapping of the memory system based on identifying the first portion and the second portion. The memory system may transfer the data associated with the operating system to a third portion of the one or more memory arrays and perform an erase operation on a subset of physical addresses of the set of physical addresses.

A queuing requester for access to a memory system is provided. Transaction requests are received from two or more requestors for access to the memory system. Each transaction request includes an associated priority value. A request queue of the received transaction requests is formed in the queuing requester. Each transaction request includes an associated priority value. A highest priority value of all pending transaction requests within the request queue is determined. An elevated priority value is selected when the highest priority value is higher than the priority value of an oldest transaction request in the request queue; otherwise the priority value of the oldest transaction request is selected. The oldest transaction request in the request queue with the selected priority value is then provided to the memory system. An arbitration contest with other requesters for access to the memory system is performed using the selected priority value.

An apparatus is provided for determining, for use in a tag-guarded memory, a selected tag value from a plurality of tag values. The apparatus comprises ordered list generation circuitry to receive an excluded tag vector comprising a plurality of fields, where each field is associated with a tag value and identifies whether the associated tag value is excluded from use. The ordered list generation circuitry is arranged to generate, from the excluded tag vector, an ordered list of non-excluded tag values. The apparatus further comprises count determination circuitry to determine, using the excluded tag vector and an identified start tag value, a count value indicative of a number of non-excluded tag values occurring in a region of the excluded tag vector bounded by an initial field and a field corresponding to the start tag value. The apparatus also comprises tag selection circuitry to determine the selected tag value from the ordered list based on the count value and an identified offset which indicates a required number of non-excluded tag values between the start tag value and the selected tag value.

A storage system and method for host memory access are provided. In one embodiment, a storage system is provided comprising a memory and a controller. The controller is configured to receive a write command from the host that is recognized by the storage system as a read host memory command; in response to receiving the write command, send an identification of a location in the host memory to the host; and receive, from the host, data that is stored in the location in the host memory. Other embodiments are provided.

The present disclosure relates to an emulation test system for flash translation layer and a method thereof, the system comprising a network block device, a virtual hardware accelerator, a flash translation layer module, and a virtual flash memory based on the network block device, wherein the network block device is configured to receive and forward test information, the test information including a read instruction and/or a write instruction and data to be written; the virtual hardware accelerator is configured to allocate the test information to each thread of the virtual hardware accelerator and perform virtual hardware acceleration on the flash translation layer module; and the flash translation layer module is configured to operate the virtual flash memory based on the test information to obtain an operation result.

A storage system includes a CPU, a first memory module, a second memory module, and a storage device. The processor and the first memory module are installed in the same node. The second memory module are replaceable without shutting down power supply of the node. The first memory module stores an operating system and a program for managing user data to be stored in the storage device. The second memory module stores cache data of the user data to be stored in the storage device. The processor is configured to store a copy of data to be stored in the second memory module in the third memory module.

According to one embodiment, a controller constructs a plurality of block groups. The plurality of block groups include at least a first block group configured using a first type block group and a second block group configured using a second block group. The first type block group includes a plurality of non-defective blocks obtained by selecting one or more non-defective blocks in an equal number from each of a plurality of dies or each of a plurality of planes. The second type block group includes a plurality of non-defective blocks. The number of non-defective blocks included in the second type block group is equal to the number of non-defective blocks included in the first type block.

A data storage system can employ a read destructive memory configured to fill a first cache with a first data set from a data repository prior to populating a second cache with a second data set describing the first data set with the first and second cache each having non-volatile ferroelectric memory cells. An entirety of the first cache may be read in response to a cache hit in the second cache with the cache hit responsive to a data read command from a host and with the first cache being read without a refresh operation restoring the data of the first cache.