Methods, apparatus, systems and articles of manufacture are disclosed to utilize non-volatile memory for computer system boot. An example processor platform includes a non-volatile memory coupled to a processing unit via a bus, and a microcontroller to: configure the processing unit to store, on the non-volatile memory, a heap and a stack for execution of boot code, and configure the processing unit to execute the boot code stored on the non-volatile memory.

Examples of the present disclosure relate to a device, method, and medium storing instructions for execution by a processor for refreshing memory blocks of solid state memory through a temperature compensated refresh rate. Techniques discussed herein include a solid state memory to store data and a temperature sensor to identify a temperature of the solid state memory. The memory device with solid state memory also includes a memory controller that periodically refreshes memory blocks of the solid state memory at an adjustable refresh rate, wherein memory controller is to adjust the adjustable refresh rate based on the temperature of the solid state memory.

Methods, systems, and devices associated with techniques for secure writes by non-privileged users are described. A memory device may be configured with one or more blocks of memory operating in a secure write mode. The memory device may receive an append command from a non-privileged user. The append command may indicate data to write to the block of memory at an address determined by the memory device. The memory device may identify a pointer to the address for storing the data within the block of memory. The memory device may write the data to a portion of the block of memory based on identifying the pointer and may update the pointer associated with the block of memory based on writing the data.

A storage device includes a non-volatile memory including a plurality of non-volatile memory cells, a buffer memory configured to temporarily store write data to be written to the non-volatile memory or read data read from the non-volatile memory, and a controller configured to receive a sleep mode signal from an external host. When the sleep mode signal is received by the controller, the controller is configured to block a first power supplied to the non-volatile memory and set the buffer memory to one of a first mode in which a second power is blocked from being supplied to the buffer memory and a second mode in which the buffer memory operates with low power. The write data stored in the buffer memory is written to the non-volatile memory when the buffer memory is set to the first mode.

Apparatus and methods are disclosed, including using a memory controller to track a maximum logical saturation over the lifespan of the memory device, where logical saturation is the percentage of capacity of the memory device written with data. A portion of a pool of memory cells of the memory device is reallocated from single level cell (SLC) static cache to SLC dynamic cache storage based at least in part on a value of the maximum logical saturation, the reallocating including writing at least one electrical state to a register, in some examples.

The present disclosure relates to designating or allocating static and dynamic SLC blocks between a non-write burst free block pool and a write burst free block pool. In some embodiments, a free block pool can be utilized by a host for write burst operations and/or non-write burst operations. In these embodiments, the over provisioning portion of the memory sub-system can be designated into a plurality of portions.

A memory device may receive a read request describing a logical address at the memory device. The memory device may obtain a table entry associated with the logical address. The table entry comprises a physical address corresponding to the logical address and a write temperature data indicating a write temperature for the logical address. The memory device may determine a corrected threshold voltage for reading the physical address based at least in part on the write temperature data and read the physical address using the corrected threshold voltage.

A method includes designating, by an over provisioning component, a first set of memory cells of a memory array for use in write burst mode operations, designating a second set of memory cells of the memory array for use in non-write burst mode operations, identifying that a request to perform a particular non-write burst operation exceeds a quantity of memory cells available to the second set of memory cells for use in the non-write burst mode writing operations, designating, by the over provisioning component, a portion of the first set of memory cells as a static single level cell (SLC) block for use in the non-burst mode writing operations in response to the request, and writing data associated with the particular non-write burst writing operation to the static SLC block.

A storage device may include a plurality of memory devices and a memory controller in communication with the plurality of memory devices through a plurality of channels. The memory controller may select candidate channels to be activated among the plurality of channels, determine a threshold number of channel activation based on a number of channels in an active state before a first time point, and activate one or more target channels among the candidate channels so that a number of the target channels to be activated at the first time point is within the threshold number.

A memory device includes: a memory array used for implementing neural networks (NN), the NN including a plurality of layers; and a controller coupled to the memory array, the controller being configured for: determining a computation duration of a first data of a first layer of the plurality of layers; selecting a first program operation if the computation duration of the first data of the first layer is shorter than a threshold; and selecting a second program operation if the computation duration of the first data of the first layer is longer than the threshold, wherein the second program operation has a longer program pulse time than the first program operation.