A treatment apparatus includes two can rolls provided on a transfer path through which a long resin film is transferred in a roll-to-roll manner in a vacuum chamber; and surface treatment means facing an outer circumference of each of the can rolls to treat a surface of the long resin film cooled by being wound around the outer circumference. The downstream can roll is provided with upper and lower two sets of feeding and sending systems, and one surface of the long resin film in contact with the outer circumference of the downstream can roll at a time when the long resin film travels through the lower one of the two sets of feeding and sending systems is opposite to the other surface of the resin film in contact with the outer circumference of the downstream can roll at a time when the resin film travels through the upper one.

One embodiment described herein is directed to a method involving depositing a seed layer on a substrate, the seed layer comprising A1 phase FePt with a ratio of Pt of Fe greater than 1:1. A main layer is deposited on the seed layer, the main layer comprising A1 phase FePt with a ratio of Pt to Fe of approximately 1:1. A cap layer is deposited on the main layer, the cap layer comprising A1 phase FePt with a ratio of Pt to Fe of less than 1:1. The seed, main and cap layers are annealed to convert the A1 phase FePt to L1.sub.0 phase FePt having a graded FePt structure of varying stoichimetry from approximately Fe.sub.50Pt.sub.50 adjacent a lower portion of the structure proximate the substrate to Fe.sub.>50Pt.sub.<50 adjacent an upper portion of the structure opposite the lower portion.

One embodiment described herein is directed to a method involving depositing a seed layer on a substrate, the seed layer comprising A1 phase FePt with a ratio of Pt of Fe greater than 1:1. A main layer is deposited on the seed layer, the main layer comprising A1 phase FePt with a ratio of Pt to Fe of approximately 1:1. A cap layer is deposited on the main layer, the cap layer comprising A1 phase FePt with a ratio of Pt to Fe of less than 1:1. The seed, main and cap layers are annealed to convert the A1 phase FePt to L1.sub.0 phase FePt having a graded FePt structure of varying stoichimetry from approximately Fe.sub.50Pt.sub.50 adjacent a lower portion of the structure proximate the substrate to Fe.sub.>50Pt.sub.<50 adjacent an upper portion of the structure opposite the lower portion.

Devices that include a near field transducer (NFT), the NFT having a disc and a peg, and the peg having five surfaces thereof; and at least one adhesion layer positioned on at least one of the five surfaces of the peg, the adhesion layer including one or more of the following: yttrium (Y), tin (Sn), iron (Fe), copper (Cu), carbon (C), holmium (Ho), gallium (Ga), silver (Ag), ytterbium (Yb), chromium (Cr), tantalum (Ta), iridium (Ir), zirconium (Zr), yttrium (Y), scandium (Sc), cobalt (Co), silicon (Si), nickel (Ni), molybdenum (Mo), niobium (Nb), palladium (Pd), titanium (Ti), rhenium (Re), osmium (Os), platinum (Pt), aluminum (Al), ruthenium (Ru), rhodium (Rh), vanadium (V), germanium (Ge), tin (Sn), magnesium (Mg), iron (Fe), copper (Cu), tungsten (W), hafnium (Hf), carbon (C), boron (B), holmium (Ho), antimony (Sb), gallium (Ga), manganese (Mn), silver (Ag), indium (In), bismuth (Bi), zinc (Zn), ytterbium (Yb), and combinations thereof.

A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

A graphene layer, used as an anti-corrosive protection medium for magnetic media, overcomes the existing problem of reducing the carbon overcoat layer thickness for magnetic media. Unlike the amorphous carbon that is currently used as an anti-corrosion layer, the impenetrability of graphene to all known gaseous substances enables full corrosion protection of the underlying magnetic medium with a layer of graphene that may be, for example, as thin as a single layer of graphene. The dry transfer of graphene onto magnetic recording disks is enabled, such that the resulting interface of the graphene with the magnetic layer is protested from contact with impurities.

A graphene layer, used as an anti-corrosive protection medium for magnetic media, overcomes the existing problem of reducing the carbon overcoat layer thickness for magnetic media. Unlike the amorphous carbon that is currently used as an anti-corrosion layer, the impenetrability of graphene to all known gaseous substances enables full corrosion protection of the underlying magnetic medium with a layer of graphene that may be, for example, as thin as a single layer of graphene. The dry transfer of graphene onto magnetic recording disks is enabled, such that the resulting interface of the graphene with the magnetic layer is protested from contact with impurities.

Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on a substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of processes that expose substrates to energy of varying forms. Apparatus and methods disclosed herein enable processing of two major surfaces of a substrate simultaneously, or sequentially by flipping. In some embodiments, magnetic properties of the substrate surface may be uniformly altered by plasma exposure and then selectively restored by exposure to patterned energy.

Devices that include a near field transducer (NFT), the NFT having a disc and a peg, and the peg having five surfaces thereof; and at least one adhesion layer positioned on at least one of the five surfaces of the peg, the adhesion layer including one or more of the following: yttrium (Y), tin (Sn), iron (Fe), copper (Cu), carbon (C), holmium (Ho), gallium (Ga), silver (Ag), ytterbium (Yb), chromium (Cr), tantalum (Ta), iridium (Ir), zirconium (Zr), yttrium (Y), scandium (Sc), cobalt (Co), silicon (Si), nickel (Ni), molybdenum (Mo), niobium (Nb), palladium (Pd), titanium (Ti), rhenium (Re), osmium (Os), platinum (Pt), aluminum (Al), ruthenium (Ru), rhodium (Rh), vanadium (V), germanium (Ge), tin (Sn), magnesium (Mg), iron (Fe), copper (Cu), tungsten (W), hafnium (Hf), carbon (C), boron (B), holmium (Ho), antimony (Sb), gallium (Ga), manganese (Mn), silver (Ag), indium (In), bismuth (Bi), zinc (Zn), ytterbium (Yb), and combinations thereof.