A perpendicular magnetic recording medium exhibits reduced noise and improved performance in such measures as SN ratio, and can realize high magnetic recording densities. In the perpendicular magnetic recording medium, at least a first nonmagnetic intermediate layer, second nonmagnetic intermediate layer, and magnetic recording layer are stacked in order on a nonmagnetic substrate. The first nonmagnetic intermediate layer is formed from a CoCrRuW alloy, and the second nonmagnetic intermediate layer is formed from an Ru-base alloy.

A perpendicular magnetic recording medium exhibits reduced noise and improved performance in such measures as SN ratio, and can realize high magnetic recording densities. In the perpendicular magnetic recording medium, at least a first nonmagnetic intermediate layer, second nonmagnetic intermediate layer, and magnetic recording layer are stacked in order on a nonmagnetic substrate. The first nonmagnetic intermediate layer is formed from a CoCrRuW alloy, and the second nonmagnetic intermediate layer is formed from an Ru-base alloy.

A plasma CVD device includes a chamber (102), an anode (104), a cathode (103), a holding portion which holds a substrate to be deposited (101) a plasma wall (88) an anti-adhesion member (91) which is arranged between a first gap (81) between the anode and the plasma wall and a first inner surface (102a) of the chamber and a pedestal (92) which is arranged between the anti-adhesion member and a back surface of the anode and which is electrically connected to the anode. The maximum diameter of each of the first gap, a second gap (82) between the anode and the anti-adhesion member, a third gap (83) between the back surface of the anode and the pedestal, a fourth gap (84) between the plasma wall and the anti-adhesion member and a fifth gap (85) between the anti-adhesion member and the pedestal is equal to or less than 4 mm.

A plasma CVD device includes a chamber (102), an anode (104), a cathode (103), a holding portion which holds a substrate to be deposited (101) a plasma wall (88) an anti-adhesion member (91) which is arranged between a first gap (81) between the anode and the plasma wall and a first inner surface (102a) of the chamber and a pedestal (92) which is arranged between the anti-adhesion member and a back surface of the anode and which is electrically connected to the anode. The maximum diameter of each of the first gap, a second gap (82) between the anode and the anti-adhesion member, a third gap (83) between the back surface of the anode and the pedestal, a fourth gap (84) between the plasma wall and the anti-adhesion member and a fifth gap (85) between the anti-adhesion member and the pedestal is equal to or less than 4 mm.

A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

One embodiment described herein is directed to a method involving depositing a seed layer on a substrate, the seed layer comprising A1 phase FePt with a ratio of Pt of Fe greater than 1:1. A main layer is deposited on the seed layer, the main layer comprising A1 phase FePt with a ratio of Pt to Fe of approximately 1:1. A cap layer is deposited on the main layer, the cap layer comprising A1 phase FePt with a ratio of Pt to Fe of less than 1:1. The seed, main and cap layers are annealed to convert the A1 phase FePt to L1.sub.0 phase FePt having a graded FePt structure of varying stoichimetry from approximately Fe.sub.50Pt.sub.50 adjacent a lower portion of the structure proximate the substrate to Fe.sub.>50Pt.sub.<50 adjacent an upper portion of the structure opposite the lower portion.

One embodiment described herein is directed to a method involving depositing a seed layer on a substrate, the seed layer comprising A1 phase FePt with a ratio of Pt of Fe greater than 1:1. A main layer is deposited on the seed layer, the main layer comprising A1 phase FePt with a ratio of Pt to Fe of approximately 1:1. A cap layer is deposited on the main layer, the cap layer comprising A1 phase FePt with a ratio of Pt to Fe of less than 1:1. The seed, main and cap layers are annealed to convert the A1 phase FePt to L1.sub.0 phase FePt having a graded FePt structure of varying stoichimetry from approximately Fe.sub.50Pt.sub.50 adjacent a lower portion of the structure proximate the substrate to Fe.sub.>50Pt.sub.<50 adjacent an upper portion of the structure opposite the lower portion.

Various apparatuses, systems, methods, and media are disclosed for heat-assisted magnetic recording (HAMR) that includes a HAMR medium with a seed-thermal barrier structure. The seed-thermal barrier structure is positioned between a heat sink layer and a magnetic recording layer. In some examples, the seed-thermal barrier structure has a first layer including MgOTiO (MTO), a second layer including TiN on the first layer, a third layer on the second layer, and a fourth layer including MTO on the third layer. The third layer, in some examples, includes at least one of: RuAl, Pt, PtZr, PtTa, Rh, FePt, CrMo, or Cr.

Various apparatuses, systems, methods, and media are disclosed for heat-assisted magnetic recording (HAMR) that includes a HAMR medium with a seed-thermal barrier structure. The seed-thermal barrier structure is positioned between a heat sink layer and a magnetic recording layer. In some examples, the seed-thermal barrier structure has a first layer including MgOTiO (MTO), a second layer including TiN on the first layer, a third layer on the second layer, and a fourth layer including MTO on the third layer. The third layer, in some examples, includes at least one of: RuAl, Pt, PtZr, PtTa, Rh, FePt, CrMo, or Cr.