Disclosed is a three-dimensional flash memory including a back gate, which includes word lines extended and formed in a horizontal direction on a substrate so as to be sequentially stacked, and strings penetrating the word lines and extended and formed in one direction on the substrate. Each of the strings includes a channel layer extended and formed in the one direction, and a charge storage layer extended and formed in the one direction to surround the channel layer, the channel layer and the charge storage layer constitute memory cells corresponding to the word lines, and the channel layer includes a back gate extended and formed in the one direction, with at least a portion of the back gate surrounded by the channel layer, and an insulating layer extended and formed in one direction between the back gate and the channel layer.

A semiconductor storage device includes: a plurality of memory cell arrays; a plurality of bidirectional data buses provided in correspondence with respective ones of the plurality of memory cell arrays; a plurality of bidirectional buffer circuits, which are provided in correspondence with respective ones of the memory cell arrays, capable of connecting adjacent bidirectional data buses serially so as to relay data in the bidirectional data buses; and a control circuit for controlling activation of the bidirectional buffer circuits. The bidirectional buffer circuit is arranged so as to invert logic and the bidirectional buffer circuit is arranged so as not to invert logic.

Provided are a non-volatile memory device, a memory system, and a method of operating the non-volatile memory device. The method includes: performing a user operation according to at least one mode selected from among a writing mode, a reading mode, and an erasing mode with respect to a memory cell array; setting up voltages of a plurality of word lines; floating at least one word line from among the plurality of word lines, the voltages of which are set up, according to the at least one selected mode; and detecting whether the at least one word line has a progressive defect, according to a result of detecting a voltage level of the at least one floated word line.

Systems and methods related to hardware-assisted gradient optimization using streamed gradients are described. An example method in a system comprising a memory configured to store weights associated with a neural network model comprising L layers, where L is an integer greater than one, a gradient optimizer, and a plurality of workers is described. The method includes during a single burst cycle moving a first set of gradients, received from each of the plurality of workers, from at least one gradient buffer to the gradient optimizer and moving weights from at least one buffer, coupled to the memory, to the gradient optimizer. The method further includes during the single burst cycle writing back the new weights, calculated by the gradient optimizer, to the memory. The method further includes during the single burst cycle transmitting the new weights, from the gradient optimizer, to each of the plurality of workers.

Systems and methods related to hardware-assisted gradient optimization using streamed gradients are described. An example method in a system comprising a memory configured to store weights associated with a neural network model comprising L layers, where L is an integer greater than one, a gradient optimizer, and a plurality of workers is described. The method includes during a single burst cycle moving a first set of gradients, received from each of the plurality of workers, from at least one gradient buffer to the gradient optimizer and moving weights from at least one buffer, coupled to the memory, to the gradient optimizer. The method further includes during the single burst cycle writing back the new weights, calculated by the gradient optimizer, to the memory. The method further includes during the single burst cycle transmitting the new weights, from the gradient optimizer, to each of the plurality of workers.

In one form, a memory controller includes a controller and a memory operation array. The controller has an input for receiving a power state change request signal and an output for providing memory operations. The memory operation array comprises a plurality of entries, each entry comprising a plurality of encoded fields. The controller is responsive to an activation of the power state change request signal to access the memory operation array to fetch at least one entry, and to issue at least one memory operation indicated by the entry. In another form, a system comprises a memory system and a processor coupled to the memory system. The processor is adapted to access the memory module using such a memory controller.

Some embodiments include an integrated assembly having a pair of adjacent memory-block-regions, and having a separator structure between the adjacent memory-block-regions. The memory-block-regions include a first stack of alternating conductive levels and first insulative levels. The separator structure includes a second stack of alternating second and third insulative levels. The second insulative levels are substantially horizontally aligned with the conductive levels, and the third insulative levels are substantially horizontally aligned with the first insulative levels. Some embodiments include methods of forming integrated assemblies.

A method is for operating a nonvolatile memory device, the nonvolatile memory device including at least one string connected to a bit line, the at least one string including a plurality of memory cells connected in series, each of the plurality of memory cells being connected to a respective word line among a plurality of word lines and stacked in a direction perpendicular to a substrate. The method includes applying a word line voltage needed for an operation to a first word line among the word lines, applying a recovery voltage higher than a ground voltage to the first word line after the operation, and then floating the first word line.

Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, and methods of writing to and reading from a memory cell are described. In one embodiment, a cross-point memory cell includes a word line extending in a first direction, a bit line extending in a second direction different from the first direction, the bit line and the word line crossing without physically contacting each other, and a capacitor formed between the word line and the bit line where such cross. The capacitor comprises a dielectric material configured to prevent DC current from flowing from the word line to the bit line and from the bit line to the word line.

Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, and methods of writing to and reading from a memory cell are described. In one embodiment, a cross-point memory cell includes a word line extending in a first direction, a bit line extending in a second direction different from the first direction, the bit line and the word line crossing without physically contacting each other, and a capacitor formed between the word line and the bit line where such cross. The capacitor comprises a dielectric material configured to prevent DC current from flowing from the word line to the bit line and from the bit line to the word line.