Dual-precision analog memory cells and arrays are provided. In some embodiments, a memory cell, comprises a non-volatile memory element having an input terminal and at least one output terminal; and a volatile memory element having a plurality of input terminals and an output terminal, wherein the output terminal of the volatile memory element is coupled to the input terminal of the non-volatile memory element, and wherein the volatile memory element comprises: a first transistor coupled between a first supply and a common node, and a second transistor coupled between a second supply and the common node; wherein the common node is coupled to the output terminal of the volatile memory element; and wherein gates of the first and second transistors are coupled to respective ones of the plurality of input terminals of the volatile memory element.

A media management operation is executed to write data from a source block of a cache memory to a set of pages of a destination block of a storage area of a memory sub-system. An entry of a data structure identifying a page count corresponding to the source block of the cache memory is generated. A power loss event associated with the destination block of the storage area is identified. A data recovery operation is executed using the data stored in the source block to complete the write to the destination block. The data is erased from the source block in response to the page count satisfying a condition.

In certain aspects, a circuit includes a page buffer including a plurality of portions, a clock path coupled to the plurality of portions of the page buffer, and a clock level set module coupled to the page buffer. Each of the portions is configured to sequentially receive a clock signal, and sequentially return a clock return signal in response to receiving the corresponding clock signal. The clock path is configured to merge the plurality of clock return signals. The clock level set module is configured to set a start level of a first clock return signal of the plurality of clock return signals based on a number of cycles in a first clock signal of the plurality of clock signals. The first clock return signal corresponds to the first clock signal.

According to one embodiment, a memory system includes: a memory device to store data; and a controller to control an operation for the memory device. The memory device executes a program operation by a first program voltage on memory cells belonging to a first address of the memory device; detect at least one first memory cell among the memory cells by using a first determination level and a second determination level different from the first determination level, the at least one first memory cell having a threshold voltage of a value different from a value between the first determination level and the second determination level; and generate unique information of the memory device, based on a position of the first memory cell in the first address.

According to the embodiments, an external storage device switches to an interface controller for supporting only a read operation of nonvolatile memory when a shift condition for shifting to a read only mode is met. A host device switches to an interface driver for supporting only the read operation of the nonvolatile memory when determining to recognize as read only memory based on information acquired from the external storage device.

A request to perform a read operation on a memory device is received. The memory device includes a first group of memory cells. The first group of memory cells represents a first sequence of bits based on a first sequence of charge levels formed by the first group of memory cells. The read operation is performed by obtaining a first read signal for a first memory cell and a second read signal for a second memory cell of the first group of memory cells. A first rule logic is applied to the first read signal to generate a first updated signal and a second rule logic is applied to the second read signal to generate a second updated signal. Logic functions are applied to the first and second updated signals to generate an output signal indicating the first sequence of bits stored by the first group of memory cells.

A memory device includes a first cell above a substrate, a first line connected to the first cell, a second cell above the first cell connected with the first cell, a second line connected to the second cell, a third cell above the second cell connected with the second cell, a third line connected to the third cell, a fourth cell above the third cell connected with the third cell, a fourth line connected to the fourth cell, and a driver applying voltages to the lines when data is written to a cell in a write operation. To write data to the second cell, the driver applies a write voltage to the second line, applies a first voltage lower than the write voltage to the first line, and applies a second voltage higher than the first voltage and lower than the write voltage to the third and fourth lines.

Electronic systems might include a plurality of groups of memory cells and a controller for access of the plurality of groups of memory cells that is configured to cause the electronic system to determine whether a reliability of a particular group of memory cells having a particular reliability rank allocated for storing data of a particular data level at a particular memory density is less than a target reliability, and, if so, determine whether the reliability of the particular group of memory cells at a reduced memory density is less than the target reliability, and, in response to determining that the reliability of the particular group of memory cells at the reduced density is less than the target reliability, allocate the particular group of memory cells for storing data of a lower data level and allocate a different group of memory cells for storing data of the particular data level.

A flash memory method includes: classifying data into a plurality of groups of data; respectively executing error code encoding to generate first corresponding parity check code to store the groups of data and first corresponding parity check code into flash memory module as first blocks; reading out the groups of data from first blocks; executing error correction and de-randomize operation upon read out data to generate de-randomized data; executing randomize operation upon de-randomized data according to a set of seeds to generate randomized data; performing error code encoding upon randomized data to generate second corresponding parity check code; and, storing randomized data and second corresponding parity check code into flash memory module as second block; a cell of first block is used for storing data of first bit number which is different from second bit number corresponding to a cell of second block.

According to one embodiment, a memory system includes a nonvolatile memory and a memory controller configured to execute a patrol process, in response to a first command set from a host device. In the patrol process, the memory controller is configured to read first data from the nonvolatile memory, and not to output the first data to the host device.