Some embodiments include apparatus and methods having a memory cell with a first electrode, a second electrode, and a dielectric located between the first and second electrodes. The dielectric may be configured to allow the memory cell to form a conductive path in the dielectric from a portion of a material of the first electrode to represent a first value of information stored in the memory cell. The dielectric may also be configured to allow the memory cell to break the conductive path to represent a second value of information stored in the memory cell.

An electrochemical device includes an electrochemical cell and an electric circuit. The electrochemical cell comprises a first solid component and a second solid component. The two solid components comprise same chemical elements but have different concentrations of at least one type of the chemical elements. A solid electrolyte is arranged between the two solid components. The solid electrolyte is a dielectric material. The electric circuit is connected to the electrochemical cell. The electrochemical cell may be operated according to a redox process, so as to exchange chemical elements of the at least one type between the first solid component and the second solid component and thereby change an electrical conductance of each of the two solid components.

A memory structure comprises a ReRAM module embedded in a substrate. An insulative layer is formed on the substrate. A first electrode is located on the insulative layer. The first electrode is proximately connected to a first end of the ReRAM module and comprises a first surface area. A second electrode is located on the insulative layer. The second electrode is proximately connected to a second end of the ReRAM module. The second electrode comprises a second surface area, a plasma-interacting component, and a resistive component. The resistive component is located between the plasma-interacting component and the ReRAM module. A ratio of the first surface area to the second surface area creates a voltage between the first electrode and second electrode when the first surface area and second surfaces area are exposed to an application of plasma. The voltage forms a conductive filament in the ReRAM module.

Programmable resistive memory can be integrated with wide-bandgap semiconductor devices on a wide-bandgap semiconductor, silicon, or insulator substrate. The wide-bandgap semiconductor can be group IV-IV, III-V, or II-VI crystal or compound semiconductor, such as silicon carbide or gallium nitride. The programmable resistive memory can be PCRAM, RRAM, MRAM, or OTP. The OTP element can be a metal, silicon, polysilicon, silicided polysilicon, or thermally insulated wide-bandgap semiconductor. The selector in a programmable resistive memory can be a MOS or diode fabricated by wide-bandgap semiconductor.

Examples may include techniques to implement a SET write operation to a selected memory cell include in a memory array. Examples include selecting the memory cell that includes phase change material and applying various currents over various periods of time during a nucleation stage and a crystal growth stage to cause the memory cell to be in a SET logical state.

Embodiments of the invention are directed to a resistive switching device (RSD). A non-limiting example of the RSD includes a fin-shaped element formed on a substrate, wherein the fin-shaped element includes a source region, a central channel region, and a drain region. A gate is formed over a top surface and sidewalls of the central channel region. The fin-shaped element is doped with impurities that generate interstitial charged particles configured to move interstitially through a lattice structure of the fin-shaped element under the influence of an electric field applied to the RSD.

A liquid electrochemical memory device is provided. In one aspect, the device includes a memory region for storing at least two bits, the memory region having a first volume; and a liquid electrolyte region fluidically connected to the memory region, the liquid electrolyte region having a second volume larger than the first volume. The device further includes a working electrode exposed to the memory region, and a counter electrode exposed to the liquid electrolyte region. The device also includes an electrolyte filling the memory region and the liquid electrolyte region, in physical contact with the working electrode and the counter electrode, the electrolyte including at least two conductive species. The device further includes a control unit for biasing the working electrode and the counter electrode.

Provided are memristors and neuromorphic devices including the memristors. A memristor includes a lower electrode and an upper electrode that are apart from each other and first and second two-dimensional material layers that are arranged between the lower electrode and the upper electrode and stacked without a chemical bond therebetween.

Examples may include techniques to implement a SET write operation to a selected memory cell include in a memory array. Examples include selecting the memory cell that includes phase change material and applying various currents over various periods of time during a nucleation stage and a crystal growth stage to cause the memory cell to be in a SET logical state.

According to one embodiment, there is provided a nonvolatile semiconductor memory device including a cell array. The cell array includes an array of a plurality of string blocks. Among the plurality of local string blocks, one local string block includes a block selection transistor and remaining local string blocks do not include a block selection transistor. A gate terminal of the block selection transistor of the one local string block is connected to a block selection line. Signals of two word lines connected to two adjacent string blocks in the bit line direction are common signals. Signals of two block selection lines connected to the two adjacent string blocks are independent of each other.