A component includes a memory region containing optically active material, a control arrangement configured to provide at least one control signal configured to change optical properties of the optically active material, and a detector configured to detect a change in the optical properties of the optically active material. The detector includes an evaluation input region configured to receive at least one evaluation input signal and an evaluation output region configured to provide an evaluation output signal. The memory region is arranged between the evaluation input region and the evaluation output region, and the control arrangement adjoins the memory region.

A method of manufacturing a doped polycrystalline ceramic optical device includes mixing a plurality of transition metal complexes and a plurality of rare-earth metal complexes to form a metal salt solution, heating the metal salt solution to form a heated metal salt solution, mixing the heated metal salt solution and an organic precursor to induce a chemical reaction between the heated metal salt solution and the organic precursor to produce a plurality of rare-earth doped crystalline nanoparticles, and sintering the plurality of rare-earth doped nanoparticles to form a doped polycrystalline ceramic optical device having a rare-earth element dopant that is uniformly distributed within a crystal lattice of the doped polycrystalline ceramic optical device.

A method of manufacturing a doped polycrystalline ceramic optical device includes mixing a plurality of transition metal complexes and a plurality of rare-earth metal complexes to form a metal salt solution, heating the metal salt solution to form a heated metal salt solution, mixing the heated metal salt solution and an organic precursor to induce a chemical reaction between the heated metal salt solution and the organic precursor to produce a plurality of rare-earth doped crystalline nanoparticles, and sintering the plurality of rare-earth doped nanoparticles to form a doped polycrystalline ceramic optical device having a rare-earth element dopant that is uniformly distributed within a crystal lattice of the doped polycrystalline ceramic optical device.

A system and method for storing information in a quantum computer using a quantum storage ring. The method comprises cooling ions in the quantum storage ring to a low temperature; and binding the ions into a lattice structure, forming an ion Coulomb crystal.

Memory devices might include a plurality of memory cell pairs each configured to be programmed to store a digit of data; and control circuitry configured to cause the memory device to compare the stored digit of data of each memory cell pair to a received digit of data, determine whether a match condition or a no-match condition is indicated between the stored digit of data of each memory cell pair and the received digit of data, and deem a match condition to be met between the received digit of data and the stored digits of data of the plurality of memory cell pairs in response to a match condition being determined for a majority of memory cell pairs of the plurality of memory cell pairs.

Memory devices might include a plurality of memory cell pairs each configured to be programmed to store a digit of data; and control circuitry configured to cause the memory device to compare the stored digit of data of each memory cell pair to a received digit of data, determine whether a match condition or a no-match condition is indicated between the stored digit of data of each memory cell pair and the received digit of data, and deem a match condition to be met between the received digit of data and the stored digits of data of the plurality of memory cell pairs in response to a match condition being determined for a majority of memory cell pairs of the plurality of memory cell pairs.

A system and method for storing information in a quantum computer using a quantum storage ring. The method comprises cooling ions in the quantum storage ring to a low temperature; and binding the ions into a lattice structure, forming an ion Coulomb crystal.

A magnetic property measuring system includes coil structures configured to apply a magnetic field to a sample, a light source configured to irradiate incident light to the sample, and a detector configured to detect polarization of light reflected from the sample. The magnetic field is perpendicular to a surface of the sample. Each coil structure includes a pole piece and a coil surrounding an outer circumferential surface of the pole piece. A wavelength of the incident light is equal to or less than about 580 nm.

A method for determining at least one property of magnetic matter includes: applying a magnetic field to magnetic matter; directing first light on the magnetic matter at a first set of incident angles; receiving a first set of signatures associated with the first light scattered from the magnetic matter; varying orientation of the magnetic matter with respect to the magnetic field; directing second light on the magnetic matter at a second set of incident angles; receiving a second set of signatures associated with the second light scattered from the magnetic matter; determining, by processing the first set and the second set of signatures according to a dispersion relation, at least one property of the magnetic matter.

A magneto-optical memory interface includes: a memory cell structure having multiple allocated magnetic recording cells, a selection means configured to select an individual or a predetermined number of the multiple allocated magnetic recording cells of the memory structure, and configured for an electronic signal to be applicable thereto; and a light irradiation part configured to irradiate the predetermined number of the multiple allocated magnetic memory cells with an optical signal, wherein each of the magnetic recording cells is a magnetic recording cell whose sensitivity to changes in a magnetization state thereof increases in response to an irradiation light from the light irradiation part, and each of the magnetic recording cells is a magnetic recording cell whose magnetization state changes in response to an applied electrical signal resulting from selection by the selection means and the irradiation light from the light irradiation part.