The present invention is directed to computer storage systems and methods thereof. In an embodiment, a memory system comprises a controller module, a nonvolatile memory, and a volatile memory. The controller module operates according to a command and operation table. The command and operation table can be updated to change the way controller module operates. When the command and operation table is updated, the updated table is stored at a predefined location of the nonvolatile memory. There are other embodiments as well.

The present invention is directed to computer storage systems and methods thereof. In an embodiment, a memory system comprises a controller module, a nonvolatile memory, and a volatile memory. The controller module operates according to a command and operation table. The command and operation table can be updated to change the way controller module operates. When the command and operation table is updated, the updated table is stored at a predefined location of the nonvolatile memory. There are other embodiments as well.

Embodiments include a system for facilitating data storage. During operation, the system receives a request to write data associated with a logical block address (LBA), wherein the LBA indicates a die to which to write the data and includes a sub-LBA which is used as an index for a mapping table stored on the die. The system assigns, based on the LBA, a physical block address (PBA) which indicates the die and includes a sub-PBA which indicates a first physical location in a block of the die at which the data is to be stored. The system stores, in the mapping table based on the sub-LBA, the PBA. The system writes the PBA and the data to the block based on the PBA.

To reduce the area of a memory cell having a backup function. A storage device includes a cell array, and a row circuit and a column circuit that drive the cell array. The cell array includes a first power supply line, a second power supply line, a word line, a pair of bit lines, a memory cell, and a backup circuit. The cell array is located in a power domain where power gating can be performed. In the power gating sequence of the cell array, data in the memory cell is backed up to the backup circuit. The backup circuit is stacked over a region where the memory cell is formed. A plurality of wiring layers are provided between the backup circuit and the memory cell. The first power supply line, the second power supply line, the word line, and the pair of bit lines are located in different wiring layers.

Technologies for a three-dimensional (3D) multi-bit non-volatile dynamic random access memory (nvDRAM) device, which may include a DRAM array having a plurality of DRAM cells with single or dual transistor implementation and a non-volatile memory (NVM) array having a plurality of NVM cells with single or dual transistor implementations, where the DRAM array and the NVM array are arranged by rows of word lines and columns of bit lines. The nvDRAM device may also include one or more of isolation devices coupled between the DRAM array and the NVM array and configured to control connection between the dynamic random access bit lines (BLs) and the non-volatile BLs. The word lines run horizontally and may enable to select one word of memory data, whereas bit lines run vertically and may be connected to storage cells of different memory address.

Memory devices might include a controller for access of an array of memory cells and a differential storage device comprising a pair of gate-connected non-volatile memory cells, wherein the controller is configured to cause the memory device to obtain information indicative of a data value stored in a particular memory cell of the array of memory cells, program additional data to the particular memory cell, determine if a power loss to the memory device is indicated while programming the additional data to the particular memory cell, and, if a power loss to the memory device is indicated, selectively program one memory cell of the pair of gate-connected non-volatile memory cells responsive to the information indicative of the data value stored in the particular memory cell.

A three-dimensional (3D) memory device includes a 3D NAND memory array, an on-die static random-access memory (SRAM), and peripheral circuits formed on the same chip with the on-die SRAM. The peripheral circuits include a page buffer coupled to the on-die SRAM and a controller coupled to the on-die SRAM and the page buffer. The controller may be configured to load program data into the page buffer and cache the program data into the on-die SRAM as a backup copy of the program data. In response to a status of programming the program data from the page buffer into the 3D NAND memory array being failed, the controller may be further configured to transmit the backup copy of the program data in the on-die SRAM to the page buffer, and program the backup copy of the program data in the page buffer into the 3D NAND memory array.

An integrated circuit comprises a memory device including at least one memory point having a volatile memory cell and a single non-volatile memory cell coupled together to a common node.

A semiconductor device capable of reducing electric power consumption while suppressing deterioration in reliability is provided. The semiconductor device includes a flash memory, a SRAM formed on a SOI substrate, oscillation circuits generating a signal of a first frequency and a signal of a second frequency lower than the first frequency, and a processor operating in synchronization with a system clock. The processor performs steps of turning on a power supply of the flash memory, lowering a threshold voltage of the SRAM, transferring a program from the flash memory to the SRAM by using the signal of the first frequency as the system clock, turning off the power supply of the flash memory, heightening the threshold voltage of the SRAM, and executing the program stored in the SRAM by using the signal of the second frequency as the system clock.

A contactless transponder includes a non-volatile static random access memory including memory points. Each memory point is formed by a volatile memory cell and a non-volatile memory cell. A protocol processing circuit receives data and stores the received data in the volatile memory cells of the memory. A write processing circuit is configured, at the end of the reception and storage of the data, to record, in a single write cycle, the data from the volatile memory cells to the non-volatile memory cells of the respective memory points.