A test system is provided that includes a memory test circuit, a memory, an input logic circuit, a bypass circuit, an output logic circuit and a register. The register is operated as a pipeline register of the memory test circuit and the output logic circuit. In a first test mode, the memory test circuit transmits a first test signal to the memory such that the memory outputs a memory output test signal to be stored in the register and further transmitted to the memory test circuit or the output logic circuit to perform test.

A method of setting a read voltage by a memory controller and a storage device are provided. The method includes controlling a memory device to read data from memory cells by applying a test read voltage to a selected word line; receiving, from the memory device, cell count information corresponding to a read operation of the memory device, and renewing the test read voltage by using the cell count information and a cost function to find an optimum read voltage, the cost function being determined for each read voltage level; and determining a read voltage by performing the controlling of the memory device and the renewing of the test read voltage at least once.

The invention introduces a method for testing a storage unit, performed by a processing unit, including at least the following steps: after receiving a test write command from a host device through a first access interface, directing a second access interface to receive a first test pattern from a test writer and program the first test pattern into a PBA (Physical Block Address) of a storage unit; directing the second access interface to read a second test pattern from the PBA of the storage unit and output the second test pattern to a test reader; receiving a test result from the test reader; and generating a test message according to the test result and replying with the test message to the host device.

A method of setting a read voltage by a memory controller and a storage device are provided. The method includes controlling a memory device to read data from memory cells by applying a test read voltage to a selected word line; receiving, from the memory device, cell count information corresponding to a read operation of the memory device, and renewing the test read voltage by using the cell count information and a cost function to find an optimum read voltage, the cost function being determined for each read voltage level; and determining a read voltage by performing the controlling of the memory device and the renewing of the test read voltage at least once.

An exemplary memory arrangement can be provided, which can include, for example, a memory(ies), and an algorithmic memory unit(s) (AMU) coupled to the memory(ies), wherein the AMU includes a programmed testplan algorithm(s) configured to test the memory(ies). The AMU(s) can further include a hardwired testplan(s) configured to test the memory(ies). A Joint Test Action Group (JTAG) controller may be coupled to the AMU(s), which can be configured to access logic of the programmed testplan algorithm(s). A direct access controller (DAC) can be coupled to the AMU(s), which can be configured to access internal nodes in the AMU(s). The DAC can be configured to activate the programmed testplan algorithm(s) using a minimally direct access pin interface in the AMU(s).

A test system for a memory card includes a first circuit board. One side of the first circuit board is provided with a plurality of contact groups spaced apart from each other along a row direction. Another side of the first circuit board is provided with slots disposed along the row direction. The test system further includes a second circuit board. The second circuit board is provided with a test circuit, and is inserted into the slot along a direction perpendicular to the first circuit board. The second circuit board provides a test signal to the contact groups.

Disclosed herein is a test circuit for testing a device under test (DUT). The test circuit receives a test pattern output by the DUT. A content addressable memory (CAM) stores expected test data at a plurality of address locations, receives the test pattern, and outputs an address of the CAM containing expected test data matching the received test pattern. A memory also stores the expected test data at address locations corresponding to the address locations of the CAM. A control circuit causes the memory to output the expected test data stored therein at the address output by the CAM. Comparison circuitry receives the test pattern from the input, and compares that received test pattern to the expected test data output by the control circuit, and generates an error count as a function of a number of bit mismatches between the received test pattern and the expected test data.

An method of generating a featured scan pattern for test includes: providing a plurality of predetermined test patterns to perform test on a plurality of devices under test (DUT) under a stress condition to generate a plurality of test responses of each DUT; grouping a plurality of specific test responses of each DUT from the test responses of each DUT to determine a feature value corresponding to a failure feature for each DUT; and generating at least one featured test pattern according to the feature value of each DUT.

Disclosed herein is a test circuit for testing a device under test (DUT). The test circuit receives a test pattern output by the DUT. A content addressable memory (CAM) stores expected test data at a plurality of address locations, receives the test pattern, and outputs an address of the CAM containing expected test data matching the received test pattern. A memory also stores the expected test data at address locations corresponding to the address locations of the CAM. A control circuit causes the memory to output the expected test data stored therein at the address output by the CAM. Comparison circuitry receives the test pattern from the input, and compares that received test pattern to the expected test data output by the control circuit, and generates an error count as a function of a number of bit mismatches between the received test pattern and the expected test data.

Semiconductor memory devices are provided. The semiconductor memory device includes an input/output (I/O) drive controller, a data I/O unit and a data transmitter. The input/output (I/O) drive controller generates drive control signals and an input control signal for driving first and second global I/O lines in a first test mode or a second test mode. The data I/O unit drives the first global I/O line in response to an input data when a write operation is executed in the first test mode. The data transmitter transfers the data on the first global I/O line onto first and second local I/O lines to store the data on the first global I/O line in a memory cell array portion when the write operation is executed in the first test mode. Related methods are also provided.