A caching system including a first sub-cache and a second sub-cache in parallel with the first sub-cache, wherein the second sub-cache includes: line type bits configured to store an indication that a corresponding cache line of the second sub-cache is configured to store write-miss data, and an eviction controller configured to evict a cache line of the second sub-cache storing write-miss data based on an indication that the cache line has been fully written.

Some embodiments include apparatuses and methods of fabricating the apparatuses. One of the apparatuses includes a substrate of a semiconductor die; a memory cell portion located over a first portion of the substrate; a conductive pad portion located over a second portion of the substrate and outside the memory cell portion; and a sensor circuit including a portion located over the second portion of the substrate and under the conductive pad portion. The conductive pad portion includes conductive pads. Each of the conductive pads is part of a respective electrical path coupled to a conductive contact of a base outside the substrate.

A memory controller includes a memory channel controller adapted to receive memory access requests and dispatch associated commands addressable in a system memory address space to a non-volatile storage class memory (SCM) module. The non-volatile error reporting circuit identifies error conditions associated with the non-volatile SCM module and maps the error conditions from a first number of possible error conditions associated with the non-volatile SCM module to a second, smaller number of virtual error types for reporting to an error monitoring module of a host operating system, the mapping based at least on a classification that the error condition will or will not have a deleterious effect on an executable process running on the host operating system.

A semiconductor device includes an error correction code circuit and a register circuit. The error correction code circuit is configured to generate first data according to second data. The register circuit is configured to generate reset information according to a difference between the first data and the second data, for adjusting a memory cell associated with the second data. A method is also disclosed herein.

One or more sampling parameters of an application associated with a downstream voltage regulator may be determined. A power supply rejection ratio (“PSRR”) and a switching frequency of an upstream voltage regulator may be dynamically adjusted based on the sampling parameters of the application associated with the downstream voltage regulator. The sampling parameters may include a noise level and a workload of the selected application.

A processing device in a memory sub-system initiates read operations on each of a plurality of segments in a first region of the memory device during a first time interval, wherein at least a subset of the plurality of segments in the first region of the memory device are storing host data. The processing device further receives, as a result of at least one read operation, at least one data signal from a corresponding one of the plurality of segments in the first region of the memory device, and performs a signal calibration operation using the at least one data signal to synchronize one or more relevant signals with a reference clock signal used by the processing device.

Several embodiments of memory devices and systems having a variable logical memory capacity are disclosed herein. In one embodiment, a memory device can include a plurality of memory regions that collectively define a physical memory capacity and a controller operably coupled to the plurality of memory regions. The controller is configured to advertise a first logical memory capacity to a host device, determine that at least one of the memory regions is at or near end of life, and in response to the determination—send a notification to the host device that a logical memory capacity of the memory device will be reduced and then retire the at least one of the memory regions.

A semiconductor device includes a monitoring circuit suitable for generating a monitoring signal indicating whether a speed of a memory clock signal is changed based on a speed information signal representing speed information of the memory clock signal; a cycle control circuit suitable for generating a refresh cycle control signal for controlling a refresh cycle based on a system clock signal, the memory clock signal, the monitoring signal and a refresh flag signal; and a control circuit suitable for generating the memory clock signal and the refresh flag signal based on the speed information signal, the system clock signal and the refresh cycle control signal.

Several embodiments of systems incorporating memory sub-systems are disclosed herein. In one embodiment, a memory sub-system can include a memory component and a processing device configured to perform a background scan on a memory region of the memory component. In some embodiments, the background scan includes generating a bit error count (BEC) of a codeword saved on the memory region and saving statistical information corresponding to the BEC of the codeword to a histogram statistics log. In some embodiments, when the BEC of the codeword is greater than a BEC threshold, a refresh operation is scheduled for the memory region and/or logged. In these and other embodiments, when one or more error recovery error correction code (ECC) operations do not correct bit errors in the codeword, a refresh and/or retirement operation is schedule for the memory region and/or is logged.

Read operations can be performed to read data stored at a data block. Parameters reflective of a separation between a pair of programming distributions associated with the data block can be determined based on the plurality of read operations. A read request to read the data stored at the data block can be received. In response to receiving the read request, a read operation can be performed to read the data stored at the data block based on the parameters that are reflective of the separation between the pair of programming distributions associated with the data block.