Patent classifications
G11C2029/0409
Victim cache that supports draining write-miss entries
A caching system including a first sub-cache and a second sub-cache in parallel with the first sub-cache, wherein the second sub-cache includes a set of cache lines, line type bits configured to store an indication that a corresponding cache line of the set of cache lines is configured to store write-miss data, and an eviction controller configured to flush stored write-miss data based on the line type bits.
Elastic buffer in a memory sub-system for debugging information
A processing device in a memory system determines to send system state information associated with the memory device to a host system and identifies a subset of a plurality of event entries from a staging buffer based on one or more filtering factors, the plurality of event entries corresponding to events associated with the memory device. The processing device further sends the subset of the plurality of event entries as the system state information to the host system over a communication pipe having limited bandwidth.
Error-handling flows in memory devices based on bins
An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to detect a power-up state of the memory device following a power loss event; detect a read error with respect to data residing in a block of the memory device, wherein the block is associated with a current voltage offset bin; and perform temporal voltage shift (TVS)-oriented calibration for associating the block with a new voltage offset bin.
Changing scan frequency of a probabilistic data integrity scan based on data quality
Exemplary methods, apparatuses, and systems include receiving a plurality of read operations. The read operations are divided into a current set of a sequence of read operations and one or more other sets. The size of the current set is a first number of read operations. An aggressor read operation is selected from the current set. A data integrity scan is performed on a victim of the aggressor and a first indicator of data integrity is determined based on the first data integrity scan. A size of a subsequent set of read operations is set to a second number, which less than the first number, based on the indicator of data integrity.
FEEDBACK FOR POWER MANAGEMENT OF A MEMORY DIE USING A DEDICATED PIN
A memory device may include a pin for communicating feedback regarding a supply voltage to a power management component, such as a power management integrated circuit (PMIC). The memory device may bias the pin to a first voltage indicating that a supply voltage is within a target range. The memory device may subsequently determine that a supply voltage is outside the target range and transition the voltage at the pin from the first voltage to a second voltage indicating that the supply voltage is outside the target range. The memory device may select the second voltage based on whether the supply voltage is above or below the target range.
APPARATUS WITH CIRCUIT MANAGEMENT MECHANISM AND METHODS FOR OPERATING THE SAME
Disclosed herein are methods, apparatuses and systems related to adjusting operation of memory dies according to reliability measures determined in real-time. The apparatus may be configured to determine the reliability measures based on (1) initiating and completing a programming operation within respective timings following an erase operation and (2) reading the programmed data within a window from completing the programming operation.
Dynamically adjusting device operating voltage based on device performance
The described technology provides a method for dynamically adjusting operating voltage of a device, including receiving device characteristics data related to a device, performing a margining test for the device to generate a performance curve characterizing variation of the device's current performance speeds at various operating voltages from expected performance speeds at the various operating voltages, determining an operating voltage for the device based on the device characteristics data and the performance curve, and adjusting the operating of the device based on the determined operating voltage.
Read recovery control circuitry
An apparatus includes an error correction component coupled to read recovery control circuitry. The error correction component can be configured to perform one or more initial error correction operations on codewords contained within a managed unit received thereto. The read recovery control circuitry can be configured to receive the error corrected codewords from the error correction component and determine whether codewords among the error corrected codewords contain an uncorrectable error. The read recovery control circuitry can be further configured to determine that a redundant array of independent disks (RAID) codeword included in the plurality of error corrected codewords contains the uncorrectable error, request that codewords among the error corrected codewords that contain the uncorrectable error are rewritten in response to the determination, and cause the plurality of error corrected codewords to be transferred to a host coupleable to the read recovery control circuitry.
Probabilistic data integrity scan with dynamic scan frequency
Exemplary methods, apparatuses, and systems include receiving a plurality of read operations. The read operations are divided into a current set of a sequence of read operations and one or more other sets. The size of the current set is a first number of read operations. An aggressor read operation is selected from the current set. A first data integrity scan is performed on a victim of the aggressor and a first indicator of data integrity is determined based on the first data integrity scan. In response to determining the first indicator of data integrity is greater than a current maximum value, the current maximum value is set to the first indicator of data integrity. In response to determining the current maximum value satisfies a threshold value, a size of a subsequent set of read operations is set to a second number, which less than the first number.
Managing high performance storage systems with hybrid storage technologies
There is provided a method for managing a solid state storage system with hybrid storage technologies. The method includes monitoring one or more storage request streams to identify operating mode characteristics therein from among a set of possible operating mode characteristics. The set of possible operating mode characteristics correspond to a set of available operating modes of the hybrid storage technologies. The method further includes identifying a current operating mode from among the set of available operating modes responsive to the identified operating mode characteristics. The method also includes predicting a likely future operating mode responsive to variations in workload requirements to generate at least one future operating mode prediction. The method additionally includes controlling at least one of data placement, wear leveling, and garbage collection, responsive to the at least one future operating mode prediction.