A thermal chamber includes a cavity that is enclosed by sides and one or more ports that expose the cavity within the thermal chamber. Each of the one or more ports is configured to receive a temperature control component having a solid physical structure and configured to transfer thermal energy to and from an electrical device exposed via the cavity. The thermal chamber includes a bottom side open area of the thermal chamber located below the one or more ports. The bottom side open area is configured to allow the temperature control component to contact the electrical device that is exposed via the bottom side open area.

A testing apparatus comprises a tester comprising a plurality of racks, wherein each rack comprises a plurality of slots, wherein each slot comprises: (a) an interface board affixed in a slot of a rack, wherein the interface board comprises test circuitry and a plurality of sockets, each socket operable to receive a device under test (DUT); and (b) a carrier comprising an array of DUTs, wherein the carrier is operable to displace into the slot of the rack; and (c) an array of POP memory devices, wherein each POP memory device is disposed adjacent to a respective DUT in the array of DUTs. Further, the testing apparatus comprises a pick-and-place mechanism for loading the array of DUTs into the carrier and an elevator for transporting the carrier to the slot of the rack.

A test apparatus includes a device under test (DUT) configured to exchange data using a serial interface protocol and a test controller configured to receive a binary vector corresponding to a physical layer of the serial interface protocol from an external device and to buffer and transmit the received binary vector to the DUT.

Examples of techniques for an integrated wafer-level processing system are disclosed. In one example implementation according to aspects of the present disclosure, an integrated wafer-level processing system includes a memory wafer and a processing element connected to the memory wafer via a data connection.

An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device. The memory device thereafter passes through the serial input sequence of data or the parallel input sequence of data to provide an output sequence of data in the shift mode of operation or the capture mode of operation or passes through the serial input sequence of data to provide a serial output sequence of scan data in the scan mode of operation.

A test system for a memory device includes: a chamber including at least one test socket column having a plurality of test sockets arranged in a first direction, wherein memory devices to be tested are in respective ones of the plurality of test sockets, a temperature adjusting apparatus configured to supply air into the chamber according to a temperature control signal to control a temperature of the chamber, a test device electrically connected to the test sockets and configured to test the memory devices, and a temperature controller configured to receive temperature information of the memory devices from temperature sensors of the memory devices and to output to the temperature adjusting apparatus the temperature control signal to compensate for a temperature difference between a detected temperature of the memory devices and a target temperature.

A system and integrated circuits are disclosed for determining performance metrics over a plurality of cycles of an input signal using on-chip diagnostic circuitry. The system comprises a trigger generation module configured to generate a trigger signal, and diagnostic circuitry coupled with the trigger generation module. The diagnostic circuitry comprises a memory comprising a plurality of data lines, and a plurality of delay elements, each delay element of the plurality of delay elements connected between consecutive data lines of the plurality of data lines. The diagnostic circuitry is configured to receive at least one input signal, and write, upon receiving the trigger signal, values on the plurality of data lines to the memory, thereby acquiring samples of a plurality of cycles of the input signal.

There is provided a prober chuck capable of carrying out low leakage evaluation on a magnetic memory under environment in which a magnetic field is applied. A prober chuck 1 for a magnetic memory retains a wafer W having a magnetic memory formed thereon. The chuck 1 includes: a chuck top 10 that is made of a conductive material and has a wafer W placed thereon; an insulating layer 11 that is made of an insulating material and is adapted to support the bottom surface of the chuck top 10; and a guard layer 12 that is made of a conductive material and is arranged under the insulating layer 11, the guard layer being insulated from the chuck top 10 via the insulating layer 11. All of the members constituting the chuck 1 including the chuck top 10 and the guard layer 12 are made of a non-magnetic material.

A testing environment may have at least one controller connected to at least first and second testing slots positioned in a housing. The first testing slot can be configured with a first thermal range capability and the second testing slot may be configured with a second thermal range capability that differs from the first thermal range capability.

An electrostatic dissipation device with static sensing is applicable to dissipate electrostatic charges on an object, comprising an ion transmitting unit, an ion generating unit, and astatic sensing unit. The static value of the object is provided as feedback to the ion generating unit by the static sensing unit, and the ions with polarity opposing to the static value of the object are generated by the ion generating unit, by which adequate air flow generated by the ion transmitting unit is blown to the object for ion neutralization, so that the static can be dissipated. When the static of the object is dissipated, the operation of the ion transmitting unit and the ion generating unit are ceased, so the power of the electrostatic dissipation can be saved.