A solid state storage device includes a control circuit and a non-volatile memory. The control circuit includes a retry table. In addition, plural retry read-voltage sets are recorded in the retry table, and the retry table is divided into plural retry sub-tables. The plural retry read-voltage sets are classified into plural groups. The plural retry read-voltage sets are recorded into the corresponding retry sub-tables. The non-volatile memory is connected with the control circuit. During a read retry process of a read cycle, the control circuit performs a hard decoding process according to a retry sub-table of the plural retry sub-tables. If the hard decoding process fails, the control circuit performs a soft decoding process according to another retry sub-table of the plural retry sub-tables.

Disclosed is a storage test apparatus having a storage protocol matching device including an integrated protocol software unit and an integrated protocol hardware unit, in which, when an insertion of a storage is detected, a protocol configuration that matches a protocol of the storage is automatically set through a protocol switching, thereby enhancing the test efficiency.

A method of conducting bit error rate testing of an electronic device under test using a bit error rate tester (BERT) includes configuring the BERT with one or more of jitter, noise, and timing settings to derive a desired receiver stressed eye diagram; connecting the electronic device under test to the BERT via an inter-symbol interference channel that introduces delays for creation of the desired receiver stressed eye diagram at the electronic device under test; the BERT placing the electronic device under test into a loopback mode whereby data transmitted to the electronic device under test by the BERT is transmitted back to the BERT for comparison to the data transmitted to the electronic device under test; the BERT transmitting a data pattern into the electronic device under test; and the BERT comparing the data pattern transmitted to the electronic device under test by the BERT to data received back from the electronic device under test during the loopback mode to detect a bit error rate.

Examples herein describe a die that includes a testing system (e.g., testing circuitry) for measuring the actual resistance of on-die resistors. When testing the die, an I/O element (e.g., a solder bump) can be used to sweep a voltage across the on-die resistor. The testing system identifies when the voltage across the on-die resistor reaches a predefined reference voltage and measures the corresponding current. Using the measured current and the reference voltage, the testing system can identify the actual resistance of the on-die resistor. In one embodiment, the on-die resistor is tunable such if the on-die resistor has a divergent value, the die can adjust its resistance value to the desired value.

A memory sub-system, such as a solid state drive (SSD), having host interface configured to receive at least read commands and write commands from an external host system. The SSD has memory cells formed on at least one integrated circuit die, and a processing device configured to control executions of the read commands to retrieve data from the memory cells and executions the write commands to store data into the memory cells. During an autonomous self-test operation of the memory sub-system, the memory sub-system is configured to generate random challenges of proof of space, generate using a proof of space plot, stored in the memory cells, responses to the random challenges respectively, and determine validity of the responses to evaluate health of the memory cells.

Systems and methods disclosed herein provide for improved diagnostics for memory built-in self-test (MBIST). Embodiments provide for a two-pass diagnostic test of the target memory, wherein, in the first pass, a data compare unit provides clock cycle values associated with detected mis-compares to a tester, and, in the second pass, the data compare unit extracts data vectors associated with the clock cycle values. Embodiments further provide for a bit fail map report that is generated based on the extracted data vectors.

According to one embodiment, an arithmetic processor generates unknown code distribution information, for an unknown test code to which no failure mode has been specified, and determines whether labeling of the unknown code distribution information is performable. The arithmetic processor determines whether the unknown code distribution information agrees to known code distribution information, when labeling of the unknown code distribution information is performable. The arithmetic processor determines whether the unknown code satisfies a classification minimum requirement of the agreed known code. The arithmetic processor presents a content of EFA measurement that assumes a failure mode corresponding to the known code, when the unknown code distribution information agrees to the known code distribution information, and the unknown code satisfies the classification minimum requirement of the known code.

A repair system and a repair method for a semiconductor structure, a storage medium, and an electronic device are provided. The semiconductor structure includes a main memory area and a redundant memory area. The repair system of the present disclosure includes a test circuit, a control circuit, and a repair circuit. The test circuit is configured to perform defect detection on the main memory area to determine a failed cell of the main memory area and position information of the failed cell. The control circuit is connected to the test circuit, and is configured to store the position information of the failed cell and generate a repair signal according to the position information. The repair circuit is connected to the control circuit, and is configured to receive the repair signal and perform a repair operation on the failed cell through the redundant memory area.

An inspection apparatus includes a plurality of BIST circuits, each BIST circuit being configured to compare a test pattern output from an inspection target circuit with an expected value and output a signal indicating a comparison result, and a combining unit configured to generate one signal by performing a logical operation on a plurality of the signals indicating the comparison results which are output from the plurality of BIST circuits. The combining unit includes a plurality of level inspection circuits each configured to perform a level inspection of detecting a stuck-at fault. Each of the plurality of BIST circuits is connected to a corresponding one of the plurality of level inspection circuits.

In embodiments, a memory controller (MC) includes an output interface, and an execution engine (EE) to identify, based on field test results of a die coupled to the MC, initial test results of the die using an artificial neural network (ANN) trained to identify the die from a set of NVM dies based on initial test results of the set of NVM dies obtained at a time of manufacture of the set of dies. The initial test results include a first useful life prediction and the field test results include a second useful life prediction, and the initial test results are regenerated by the ANN to protect their confidentiality. In embodiments, the MC is further to compare the second useful life prediction with the first useful life prediction, to determine a deviation between the two, and output, via the output interface, the deviation to a user.