Disclosed are a method and system for detecting a memory error, and a device. The method includes: taking an application platform as a test engine of a memory test device, the application platform being provided with a system memory; capturing, by the memory test device, a data flow of an actual application program of the application platform on a memory transmission line in a manner including a logic analyzer; and taking, by the memory test device, a processed data flow as a memory test vector to test a tested memory device, thereby reproducing a memory error of the application platform or the application program on the memory test device. The present disclosure can reproduce all tested memory devices with an error in the application platform, and improves a reproduction rate for the memory error.

A failure analysis and detection method for a memory is configured to perform abnormal bit detection on a memory. The failure analysis and detection method includes: coordinates are marked on a detection area of the memory, and the coordinates are associated with layout design or a process of the detection area; a MOD function is used to perform classification according to regularity of the coordinates, and the MOD function is a function for getting remainder; and failure information corresponding to the classification is obtained from a failure bitmap (FBM) of the detection area, and the failure information includes a failure cause corresponding to the layout design or the process.

The arithmetic processing device includes a first memory control unit configured to control an access to a first memory, a second memory control unit configured to control an access to a second memory. The arithmetic processing device further includes a diagnostic control unit configured to sequentially diagnose parts within the first memory via the first memory control unit, and configured to sequentially store in the second memory via the second memory control unit, diagnostic results of sequentially diagnosing the parts in parallel with the diagnosing the parts via the first memory control unit.

A test system for a memory card includes a first circuit board. One side of the first circuit board is provided with a plurality of contact groups spaced apart from each other along a row direction. Another side of the first circuit board is provided with slots disposed along the row direction. The test system further includes a second circuit board. The second circuit board is provided with a test circuit, and is inserted into the slot along a direction perpendicular to the first circuit board. The second circuit board provides a test signal to the contact groups.

An electronic device is provided. The electronic device includes dynamic random access memory (DRAM), memory, and one or more processors communicatively coupled to the DRAM and the memory, wherein the memory store one or more computer programs including computer-executable instructions that, when executed by the one or more processors, cause the electronic device to generate a first eye diagram based on training the DRAM with a driving voltage, identify a first parameter in a designated format corresponding to the generated first eye diagram, generate a second eye diagram based on training the DRAM with the driving voltage, compare the identified first parameter with a second parameter in the designated format corresponding to the generated second eye diagram, and adjust the driving voltage based on a result of the comparison between the first parameter and the second parameter.

Various aspects of the present disclosed technology relate to techniques of locating defective memory cells based on scan chain diagnosis. Chain pattern responses of a circuit are first analyzed and at least one or more chain segment defect candidates on one faulty scan chain in the circuit and a fault model associated with the one faulty scan chain are determined. Here, each of the one or more chain segment defect candidates is a counter-based scan chain unit derived from a part or a whole of a memory array. Scan pattern responses are then analyzed to determine one or more memory cell defect candidates in the one or more chain segment defect candidates based on the information of the part or the whole of the memory array and the fault model.

Presented embodiments facilitate efficient and effective flexible implementation of different types of testing procedures in a test system. Presented embodiments enable efficient and effective random generation of test input information. In one embodiment a method includes accessing a plurality of data values to write to a DUT, generating a plurality of addresses pseudo randomly and assigning the address to a respective one of the data values, wherein assignments of a particular address to different respective ones of the data values are randomly repeatable; and directing writing of the data values to the DUT in accordance with the plurality of addresses that are randomly generated and randomly repeated. The generating a plurality of addresses randomly can include normalization. Generating a plurality of addresses pseudo randomly and assigning the address to a respective one of the data values can include performing a confirmation check. The confirmation check can include checking if the addresses within proper parameters.

A memory repairing method and a memory device applying the same are disclosed, wherein the method comprises steps as follows: A memory device comprising at least one page having a plurality of cell strings is firstly provided. A regular data pattern is then provided to block at least two of the plurality of cell strings, and the blocked cells strings are marked as inaccessible.

A memory test system may include a tester and N memory devices, where N is a positive integer greater than 1. The tester may generate test signals. A K-th memory device of the N memory devices includes a plurality of K-th memory banks and a K-th decoder, where K is each positive integer equal to or smaller than N. The K-th memory banks may be configured to operate based on first internal signals and each of the K-th memory banks includes a plurality of unit blocks. The K-th decoder may be configured to convert the test signals corresponding to the first test to the first internal signals based on a K-th conversion relation and update the K-th conversion relation based on a result of the first test with respect to the K-th memory device.

Embodiments of the present invention provide methods, program products, and systems for testing a memory cell arrangement. Embodiments of the present invention can determine categories of memory fail conditions by checking memory cells of with a sequence of test parameter configurations for a malfunction using test parameters, storing for test parameter configurations for which a malfunction is detected, and assigning the respective test parameter configuration with a bit fail count comprising the number of malfunctioning memory cells. Embodiments of the present invention can be used to create a relational data structure representing test parameter configurations and can combine one or more test parameter configurations and can create a representation of the bit fail counts of the respective test parameter configurations.