In an approach a request to write data to memory is received, wherein the memory includes: a first set of dynamic random-access memory (DRAM) accessible via a first memory channel, and a first set of storage class (SCM) memory accessible via a second memory channel. The data is written to the first set of DRAM via the first memory channel. The data is mirrored to the first set of SCM via the second memory channel.

3D memory arrays including dummy conductive lines and methods of forming the same are disclosed. In an embodiment, a memory array includes a ferroelectric (FE) material over a semiconductor substrate, the FE material including vertical sidewalls in contact with a word line; an oxide semiconductor (OS) layer over the FE material, the OS layer contacting a source line and a bit line, the FE material being between the OS layer and the word line; a transistor including a portion of the FE material, a portion of the word line, a portion of the OS layer, a portion of the source line, and a portion of the bit line; and a first dummy word line between the transistor and the semiconductor substrate, the FE material further including first tapered sidewalls in contact with the first dummy word line.

A memory device includes a content addressable memory (CAM) block storing a plurality of stored search keys. The memory device further includes control logic that determines a first number of memory cells in at least one string of the CAM block storing one of the plurality of stored search keys, the first number of memory cells storing a first logical value, and stores a calculated parity value representing the first number of memory cells in a page cache associated with the CAM block. The control logic further reads stored parity data from one or more memory cells in the at least one string, the one or more memory cells connected to one or more additional wordlines in the CAM block, and compares the calculated parity value to the stored parity data to determine whether an error is present in the one of the plurality of stored search keys in the CAM block.

A memory with an error correction function includes a controller and a memory cell array. The controller optionally writes written data to a normal storage area and a backup area of the memory cell array, and when the controller reads first data corresponding to the written data from the normal storage area, if at least two errors are included in the first data, the controller reads the backup area to output second data corresponding to the written data from the backup area.

A memory circuit configured to perform multiply-accumulate (MAC) operations for performance of an artificial neural network includes a series of synapse cells arranged in a cross-bar array. Each cell includes a memory transistor connected in series with a memristor. The memory circuit also includes input lines connected to the source terminal of the memory transistor in each cell, output lines connected to an output terminal of the memristor in each cell, and programming lines coupled to a gate terminal of the memory transistor in each cell. The memristor of each cell is configured to store a conductance value representative of a synaptic weight of a synapse connected to a neuron in the artificial neural network, and the memory transistor of each cell is configured to store a threshold voltage representative of a synaptic importance value of the synapse connected to the neuron in the artificial neural network.

A three-dimensional stacked integrated circuit (3D SIC) that can have at least a first 3D XPoint (3DXP) die and, in some examples, can have at least a second 3DXP die too. In such examples, the first 3DXP die and the second 3DXP die can be stacked. The 3D SIC can be partitioned into a plurality of columns that are perpendicular to each of the stacked dies. In such examples, when a first column of the plurality of columns is determined as failing, data stored in the first column can be replicated to a second column of the plurality of columns. Also, for example, when a part of a first column of the plurality of columns is determined as failing, data stored in the part of the first column can be replicated to a corresponding part of a second column of the plurality of columns.

A three-dimensional stacked integrated circuit (3D SIC) that can have at least a first 3D XPoint (3DXP) die and, in some examples, can have at least a second 3DXP die too. In such examples, the first 3DXP die and the second 3DXP die can be stacked. The 3D SIC can be partitioned into a plurality of columns that are perpendicular to each of the stacked dies. In such examples, when a first column of the plurality of columns is determined as failing, data stored in the first column can be replicated to a second column of the plurality of columns. Also, for example, when a part of a first column of the plurality of columns is determined as failing, data stored in the part of the first column can be replicated to a corresponding part of a second column of the plurality of columns.

A storage device having improved data recovery performance includes a memory device including a first storage region and a second storage region, and a memory controller that controls the memory device. Before performing a write operation in the first storage region, the memory controller may backup data previously stored in the first storage region, based on a fail probability of the write operation to be performed in the first storage region. If the write operation fails, the previously-stored data may be recovered from where it was backed up.

A system can respond to detection or prediction of an uncorrectable error (UE) in memory based on fault-aware analysis. The fault-aware analysis enables the system to generate a determination of a specific hardware element of the memory that is faulty. In response to detection of an error, the system can correlate a hardware configuration of the memory device with historical data indicating memory faults for hardware elements of the hardware configuration. Based on a determination of the specific component that likely caused the UE, the system can identify a region of memory associated with the detected UE and mirror the faulty region to a reserved memory space of the memory device for access to data of the faulty region.

A computer-implemented method includes fetching, by a controller, data using a plurality of memory channels of a memory system. The method further includes detecting, by the controller, that a first memory channel of the plurality of memory channels has not returned data. The method further includes marking, by the controller, the first memory channel from the plurality of memory channels as unavailable. The method further includes, in response to a fetch, reconstructing, by the controller, fetch data based on data received from all memory channels other than the first memory channel.