A method of memory deduplication includes identifying hash tables each corresponding to a hash function, and each including physical buckets, each physical bucket including ways and being configured to store data, identifying virtual buckets each including some physical buckets, and each sharing a physical bucket with another virtual bucket, identifying each of the physical buckets having data stored thereon as being assigned to a single virtual bucket, hashing a data line according to a hash function to produce a hash value, determining whether a corresponding virtual bucket has available space for a block of data according to the hash value, sequentially moving data from the corresponding virtual bucket to an adjacent virtual bucket when the corresponding virtual bucket does not have available space until the corresponding virtual bucket has space for the block of data, and storing the block of data in the corresponding virtual bucket.

A deduplication memory module, which is configured to internally perform memory deduplication, includes a hash table memory for storing multiple blocks of data in a hash table array including hash tables, each of the hash tables including physical buckets and a plurality of virtual buckets each including some of the physical buckets, each of the physical buckets including ways, an address lookup table memory (ALUTM) including a plurality of pointers indicating a location of each of the stored blocks of data in a corresponding one of the physical buckets, and a buffer memory for storing unique blocks of data not stored in the hash table memory when the hash table array is full, a processor, and memory, wherein the memory has stored thereon instructions that, when executed by the processor, cause the memory module to exchange data with an external system.

The present disclosure includes a redundant array of independent NAND for a three dimensional memory array. A number of embodiments include a three-dimensional array of memory cells, wherein the array includes a plurality of pages of memory cells, a number of the plurality of pages include a parity portion of a redundant array of independent NAND (RAIN) stripe, and the parity portion of the RAIN stripe in each respective page comprises only a portion of that respective page.

A memory controller including: a fault determination circuit to receive first parity, second parity, and data read out from a first row of a memory device, and determine, based on a result of a first error detection operation using the first parity and a result of a second error detection operation using the second parity, whether the first row is faulty; a parity storage circuit to store a repair parity for repairing a fault of a row of a plurality of rows of the memory device, wherein the plurality of rows constitutes a repair unit, and wherein the repair unit includes the first row and one or more second rows; and a recovery circuit to repair a fault of the first row by using data of at least one of the second rows and the repair parity, when the first row is determined to be a faulty row.

According to one general aspect, an apparatus may include a plurality of stacked integrated circuit dies that include a memory cell die and a logic die. The memory cell die may be configured to store data at a memory address. The logic die may include an interface to the stacked integrated circuit dies and configured to communicate memory accesses between the memory cell die and at least one external device. The logic die may include a reliability circuit configured to ameliorate data errors within the memory cell die. The reliability circuit may include a spare memory configured to store data, and an address table configured to map a memory address associated with an error to the spare memory. The reliability circuit may be configured to determine if the memory access is associated with an error, and if so completing the memory access with the spare memory.

A system and method of storing and reading digital data, including providing a nanopore polymer memory (NPM) device having at least one memory cell comprising at least two addition chambers each arranged to add a unique chemical construct (or codes) to a polymer (or DNA) string when the polymer enters the respective addition chamber, the data comprising a series of codes; successively steering the polymer from deblock chambers through the nanopore into the addition chambers to add codes to the polymer to create the digital data pattern on the polymer; and accurately controlling the bit rate of the polymer using a servo controller. The device may have loading chamber(s) to load (or remove) the polymer into/from the deblock chambers through at least one “micro-hole”. The cell may be part of a memory system that stores and retrieves “raw” data and allows for remote retrieval and conversion. The cell may store multi-bit data having a plurality of states for the codes.

A storage device includes a data storage medium and a control unit. The data storage medium includes a spare block pool including a plurality of spare blocks. Each spare block includes a plurality of data pages. The control unit is electrically coupled to the data storage medium. The control unit is configured to receive data from a host and to determine whether the data is sequential data according to a default policy. The data is written into at least two of the plurality of data pages in one of the plurality of spare blocks respectively. The control unit and a data storing method for the storage device are also provided.

Techniques are provided for overcoming failures in a memory. One portion of the memory may operate in a single chip spare mode. Upon detection of an error in a single chip in the portion of the memory, a region of the portion of the memory may be converted to operate in a double chip spare mode. The memory may be accessed in both single and double chip spare modes.

3D memory arrays including dummy conductive lines and methods of forming the same are disclosed. In an embodiment, a memory array includes a ferroelectric (FE) material over a semiconductor substrate, the FE material including vertical sidewalls in contact with a word line; an oxide semiconductor (OS) layer over the FE material, the OS layer contacting a source line and a bit line, the FE material being between the OS layer and the word line; a transistor including a portion of the FE material, a portion of the word line, a portion of the OS layer, a portion of the source line, and a portion of the bit line; and a first dummy word line between the transistor and the semiconductor substrate, the FE material further including first tapered sidewalls in contact with the first dummy word line.

A computer-implemented method includes fetching, by a controller, data using a plurality of memory channels of a memory system. The method further includes detecting, by the controller, that a first memory channel of the plurality of memory channels has not returned data. The method further includes marking, by the controller, the first memory channel from the plurality of memory channels as unavailable. The method further includes, in response to a fetch, reconstructing, by the controller, fetch data based on data received from all memory channels other than the first memory channel.